TRANSISTOR 700V Search Results
TRANSISTOR 700V Result Highlights (4)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LP395Z/LFT1 |
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Ultra Reliable Power Transistor 3-TO-92 |
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| UCC28910DR |
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700V Flyback Switcher with Constant-Voltage Constant-Current and Primary-side Control 7-SOIC -40 to 125 |
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| UCC28911D |
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700V Flyback Switcher with Constant-Voltage Constant-Current and Primary-side Regulation 7-SOIC -40 to 125 |
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| UCC28910D |
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700V Flyback Switcher with Constant-Voltage Constant-Current and Primary-side Control 7-SOIC -40 to 125 |
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TRANSISTOR 700V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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mje13005dContextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, |
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MJE13005D MJE13005D QW-R502-379 | |
UTC 379
Abstract: mje13005d transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D
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MJE13005D MJE13005D QW-R502-379 UTC 379 transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D | |
mje13005dContextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, |
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MJE13005D MJE13005D QW-R502-379. | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, |
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MJE13005D MJE13005D QW-R502-379 | |
MJE13005D
Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D
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MJE13005D MJE13005D QW-R502-379. HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D | |
to-126 HIGH SPEED SWITCHING transistor
Abstract: mje13005d free transistor high power NPN 2A TO 126
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MJE13005D MJE13005D QW-R203-040 to-126 HIGH SPEED SWITCHING transistor free transistor high power NPN 2A TO 126 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, |
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MJE13005D-K MJE13005D-K QW-R213-021 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage |
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MJE13003D-P MJE13003D-P MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K MJE13003DL-P-x-T92-R MJE13003DG-P-xat QW-R201-085 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
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BUJ105A O220AB | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ105AB Silicon Diffused Power Transistor Product specification October 2001 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount |
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BUJ105AB OT404 | |
BUJ103AX
Abstract: BP317 BU1706AX
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BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. |
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MJE13003D MJE13003D MJE13003DL-x-TA3-T MJE13003DG-x-TA3-T MJE13003DL-x-T60-K MJE13003DG-x-T60-K MJE13003DL-x-T92-B MJE13003DG-x-T92-B MJE13003DL-x-T92-K QW-R204-025 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
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BUJ103A O220AB SCA60 135104/240/02/pp12 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. |
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MJE13003D MJE13003D MJE13003DL-x-T60-K MJE13003DG-x-T60-K MJE13003DL-x-T92-B MJE13003DG-x-T92-B MJE13003DL-x-T92-K MJE13003DG-x-T92-K MJE13003DL-x-T92-R QW-R204-025 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ105AB Silicon Diffused Power Transistor Product specification October 2001 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount |
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BUJ105AB BUJ105AB OT404 | |
BUJ105AContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
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BUJ105A BUJ105A O220AB | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage |
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MJE13003D-P MJE13003D-P MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K QW-R201-085 | |
phe13007Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13007 Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high |
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PHE13007 PHE13007 O220AB | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended |
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BUJ103AX | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, |
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MJE13005D O-220 O-220F MJE13005D O-251 QW-R502-379 | |
BUJ100
Abstract: transistor BUJ100
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BUJ100 BUJ100 transistor BUJ100 | |
NTE163AContextual Info: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V |
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NTE163A NTE163A 100mA, | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high |
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PHE13009 PHE13009 O220AB | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ100 Silicon Diffused Power Transistor Product specification September 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use |
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BUJ100 | |