TRANSISTOR 6Z Search Results

2SC4815

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: ELM98xxxxC CMOS Voltage regulator •General description ELM98xxxxC is CMOS voltage regulator, which mainly consists of reference voltage source, error amplifier, short-protected control transistor, thermal protection circuit, output voltage setting resistors. The standard output

Mosfet FDD

Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Contextual Info: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

DSAS 13-0

Abstract: d92 02 a9hv
Contextual Info: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

a9hv

Contextual Info: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

UN1111

Abstract: UNR1111 XN06111 XN6111
Contextual Info: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol

MTD3055V

Abstract: fairchild mosfets
Contextual Info: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

a7w transistor

Abstract: a7w 57 transistor a7w
Contextual Info: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

IRFR9024

Contextual Info: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

MTD2955

Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
Contextual Info: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

MTD2955V

Abstract: transistor WT9 a9hv
Contextual Info: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

a9hv

Abstract: MTD3055VL
Contextual Info: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

3055VL

Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
Contextual Info: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

D665

Abstract: SI4532DY w992
Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very

Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very

Contextual Info: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very

Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very

transistor 6z

Abstract: marking 6Z UN1111 XN6111
Contextual Info: Composite Transistors XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector Tr1 2 : Base (Tr1)

marking 6Z

Abstract: UN1111 UNR1111 XN06111 XN6111
Contextual Info: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25

marking 6Z

Abstract: UN1111 UNR1111 XP06111 XP6111
Contextual Info: Composite Transistors XP06111 XP6111 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

l7805 regulator

Abstract: L4960 NOTE transistor l4941 data sheet ic l7805 voltage drop circuit from 220V to 10V l7805 line L4960 L6217 l7805 L4941 equivalent
Contextual Info: APPLICATION NOTE VERY LOW DROP REGULATORS ENHANCE SUPPLY PERFORMANCE By Paolo ANTONIAZZI and Arturo WOLFSGRUBER Standard three-terminal voltage regulator ICs use an NPN transistor as the series pass element, so the input-output voltage drop is 1.5V-2V. Low dropout