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    TRANSISTOR 6A Search Results

    TRANSISTOR 6A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    TV power transistor datasheet

    Abstract: power transistor 2SD2599 equivalent 2SC5411 transistor 2sd2499 transistor 2Sc5858 equivalent 2SC5570 components in horizontal output 2SC5855
    Text: Part Number Product Category Application Scope 2SC5280 Horizontal Deflection Output Power Transistor Color 2SC5339 Horizontal Deflection Output Power Transistor Color 2SC5386 Horizontal Deflection Output Power Transistor Color 2SC5387 Horizontal Deflection Output Power Transistor


    Original     		PDF 2SC5280 2SC5339 2SC5386 2SC5387 2SC5404 2SC5411 2SC5421 2SC5422 2SC5445 2SC5446 TV power transistor datasheet power transistor 2SD2599 equivalent transistor 2sd2499 transistor 2Sc5858 equivalent 2SC5570 components in horizontal output 2SC5855

    CPH5524

    Abstract: No abstract text available
    Text: Ordering number : ENA0859A CPH5524 Bipolar Transistor http://onsemi.com – 50V, (–)6A, Low VCE(sat) Complementary Dual CPH5 Applications • Relay drivers, lamp drivers, motor drivers, IGBT gate drivers Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


    Original     		PDF ENA0859A CPH5524 A0859-8/8 CPH5524

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    transistor 1000V 6A

    Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
    Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		PDF SQD300AA100 E76102 SQD300AA100 SQD300AA120 transistor 1000V 6A diode 6A 1000v transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor

    Vbe 40 transistor

    Abstract: SQD300BA60 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns
    Text: TRANSISTOR MODULE Hi- SQD300BA60 UL;E76102 M SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated


    Original     		PDF SQD300BA60 E76102 SQD300BA60 200ns) 400mA Vbe 40 transistor 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns

    SQD300A60

    Abstract: A1380 300V switching transistor SQD300A40 M6 transistor
    Text: TRANSISTOR MODULE SQD300A40/60 UL;E76102 M SQD300A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		PDF SQD300A40/60 E76102 SQD300A 400/600V SQD300A40 SQD300A60 SQD300A40 SQD300A60 A1380 300V switching transistor M6 transistor

    300V switching transistor

    Abstract: Vbe 40 transistor QCA300BA60
    Text: TRANSISTOR MODULE Hi- QCA300BA60 UL;E76102 M QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is


    Original     		PDF QCA300BA60 E76102 QCA300BA60 200ns) 400mA 300V switching transistor Vbe 40 transistor

    QCA300BA60

    Abstract: 675g M6 transistor
    Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is


    Original     		PDF QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A 675g M6 transistor

    QCA300BA60

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is


    Original     		PDF QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A

    2SB775

    Abstract: 2SB77 2SD895 1116MW
    Text: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3


    Original     		PDF ENN679F 2SB775 2SD895 2SB775/2SD895 2SB775/2SD895] 2SB775 2SB77 2SD895 1116MW

    60V transistor npn 2a

    Abstract: No abstract text available
    Text: PZT158 NPN Transistor Elektronische Bauelemente Silicon Planar High Current Transistor RoHS Compliant Product SOT-223 Description The PZT158 is designed for general purpose switching and amplifier applications. Features * 6Amps Continous Current, Up To 20Amps Peak Current


    Original     		PDF PZT158 OT-223 PZT158 20Amps 10Amps 300mA 100mA, 50MHz 100mA 60V transistor npn 2a

    UN1518

    Abstract: UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) *Pb-free plating product number: UN1518L „ ORDERING INFORMATION Order Number


    Original     		PDF UN1518 UN1518L UN1518-AE3-R UN1518L-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor

    UN1518

    Abstract: UN1518-AE3-R UN1518L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) Lead-free: UN1518L Halogen-free:UN1518G „ ORDERING INFORMATION Normal UN1518-AE3-R


    Original     		PDF UN1518 UN1518L UN1518G UN1518-AE3-R UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UTC TIP42C NPN EPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP42C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip41C TO-220


    Original     		PDF TIP42C TIP42C tip41C O-220 -30mA -100V -600mA -300mA -500mA,

    t14n50

    Abstract: JEDEC MO-187 MO-187 ZXT14N50DX ZXT14N50DXTA ZXT14N50DXTC DSA0037473 A1BL
    Text: ZXT14N50DX SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 17m ; IC= 6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT14N50DX ZXT14N50DXTA 12mmax: t14n50 JEDEC MO-187 MO-187 ZXT14N50DX ZXT14N50DXTA ZXT14N50DXTC DSA0037473 A1BL

    transistor BUX

    Abstract: BUX14 TR07
    Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection


    OCR Scan     		PDF BUX14 CB-19 transistor BUX BUX14 TR07

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated


    OCR Scan     		PDF SQQ300BA60 200ns) hrEfe750

    BFW16

    Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
    Text: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of


    OCR Scan     		PDF BFW16 Q62702-F319 TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		PDF O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan     		PDF OD300A40/6Q E76102 SQD300A 400/600V --A40 0Q02B06

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQQ300AA100 UL;E76102 M S Q D 3 0 0 A A 10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan     		PDF SQQ300AA100 E76102 SQD300AA100

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD300AA120 UL;E 76102 M S Q D 3 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan     		PDF SQD300AA120 DDD2213