NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
|
Original
|
PDF
|
2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
|
Untitled
Abstract: No abstract text available
Text: 2N7370 Available on commercial versions NPN Darlington High Power Silicon Transistor Qualified per MIL-PRF-19500/624 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high power NPN transistor is rated at 12 amps and is military qualified up to the JANTXV
|
Original
|
PDF
|
2N7370
MIL-PRF-19500/624
O-254AA
MIL-PRF-19500/624.
T4-LDS-0208,
|
2SC4571
Abstract: 2SC4571-T1 2SC4571-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
|
Original
|
PDF
|
2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T1
2SC4571-T2
|
Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
PDF
|
NE58219
2SC5004
2SC5004
NE58219-A
2SC5004-A
NE58219-T1-A
2SC5004-T1-A
perfor516
|
NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
PDF
|
2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
|
transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
PDF
|
NE58219
2SC5004
2SC5004
NE58219
NE58219-T1
2SC5004-T1
transistor zo 607
zo 607 MA
2SC5004-T1
NE58219-T1
nec 237 521 02
NE582
|
2SC4571
Abstract: 2SC4571-T1 2SC4571-T2
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
|
Original
|
PDF
|
2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T1
2SC4571-T2
|
TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
|
Original
|
PDF
|
2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
|
FMMT634Q
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
|
Original
|
PDF
|
FMMT634Q
900mA
625mW
FMMT734Q
AEC-Q101
DS37051
FMMT634Q
|
Untitled
Abstract: No abstract text available
Text: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
|
OCR Scan
|
PDF
|
002flT33
BLV20
|
transistor
Abstract: CA3046 pnp array 5GHz PNP transistor TRANSISTOR PNP 5GHz TRANSISTOR ARRAYS transistor array high frequency transistor array ca3039 HFA3046 npn transistor
Text: LINEAR TRANSISTOR AND DIODE ARRAYS SELECTION G UIDE. 6-2 CA3018 General Purpose Transistor Arrays.
|
OCR Scan
|
PDF
|
CA3018
CA3039
CA3045,
CA3046
CA3081,
CA3082
CA3083
CA3086
CA3096
CA3127
transistor
CA3046 pnp array
5GHz PNP transistor
TRANSISTOR PNP 5GHz
TRANSISTOR ARRAYS
transistor array high frequency
transistor array
HFA3046
npn transistor
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
PDF
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
|
OCR Scan
|
PDF
|
2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
|
transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
|
OCR Scan
|
PDF
|
2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
|
|
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the
|
OCR Scan
|
PDF
|
2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T2
|
2sc4571
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
|
OCR Scan
|
PDF
|
2SC4571
2SC4571
SC-70)
2SC4571-T1
|
digital transistor ROHM
Abstract: transistor 624
Text: Transistor, digital, dual, with resistors, 5-pin package Transistor, digital, dual, with resistors, 5-pin package These ROHM packages consist of various connected pairs of digital transistors in a single 5-pin package. These dual digital transistor 5-pin packages are available in UMT5 UM5 and
|
OCR Scan
|
PDF
|
SC-74A)
digital transistor ROHM
transistor 624
|
toshiba photocoupler 621
Abstract: TLP624-1 TLP624 11-5B2 E67349 TLP624-2 TLP624-4
Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL TLP624, TLP624-2, TLP624-4 DATA GaAs IRED & PHOTO-TRANSISTOR T LP 624 PRO G RAM M ABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared em itting diode optically coupled to a photo-transistor.
|
OCR Scan
|
PDF
|
TLP624,
TLP624-2,
TLP624-4
tlp624)
TLP624-2
TLP624-4
TLP624
toshiba photocoupler 621
TLP624-1
11-5B2
E67349
|
NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
|
OCR Scan
|
PDF
|
2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
|
D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
|
OCR Scan
|
PDF
|
2SC5004
D 1437 transistor
|
transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
|
OCR Scan
|
PDF
|
2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
|
BF967
Abstract: Q62702-F503 ft950 transistor 624
Text: 1 29E D aa3st»as oogmstô 3 SIEG st-/r - BF 967 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF for input stages up to 900 M H z BF 967 is a PNP silicon UHF planar transistor with passivated surface in a low-capacitance plastic package similar to T 0 119 50 B 3 DIN 41867 . The transistor is particularly suitable
|
OCR Scan
|
PDF
|
00G4S
BF967
T0119
Q62702-F503
fi23St
Q04S7ci
100MHz)
BF967
Q62702-F503
ft950
transistor 624
|
O2SC
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
|
OCR Scan
|
PDF
|
BUK465-100A
SQT404
O2SC
|
