QM20TD-H
Abstract: mitsubishi air conditioner E80276 all transistor qm20td-h application note
Text: MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-H • • • • • IC Collector current . 20A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75
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QM20TD-H
E80276
E80271
QM20TD-H
mitsubishi air conditioner
E80276
all transistor
qm20td-h application note
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Untitled
Abstract: No abstract text available
Text: AOD7S65/AOU7S65 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOD7S65/AOU7S65
AOD7S65
AOU7S65
Maxi65
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Untitled
Abstract: No abstract text available
Text: AOD7S65/AOU7S65 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOD7S65/AOU7S65
AOD7S65
AOU7S65
AOD7S65
AOU7S65
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AOD7S60
Abstract: aou7s60
Text: AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOD7S60/AOU7S60
AOD7S60
AOU7S60
AOD7S60
AOU7S60
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AOWF7S60
Abstract: No abstract text available
Text: AOW7S60/AOWF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOW7S60 & AOWF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOW7S60/AOWF7S60
AOW7S60
AOWF7S60
O-262
O-262F
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Untitled
Abstract: No abstract text available
Text: AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOD7S60/AOU7S60
AOD7S60
AOU7S60
1TO251
Absol60
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Untitled
Abstract: No abstract text available
Text: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT7S60/AOB7S60/AOTF7S60
AOT7S60
AOB7S60
AOTF7S60
AOT7S60L
AOB7S60L
AOTF7S60L
O-220
O-263
O-220F
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7S60
Abstract: AOTF7S60L
Text: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT7S60/AOB7S60/AOTF7S60
AOT7S60
AOB7S60
AOTF7S60
AOT7S60L
AOB7S60L
AOTF7S60L
O-220
O-220F
O-263
7S60
AOTF7S60L
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AOB7S60
Abstract: No abstract text available
Text: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT7S60/AOB7S60/AOTF7S60
AOT7S60
AOB7S60
AOTF7S60
AOT7S60L
AOB7S60L
AOTF7S60L
O-220
O-263
O-220F
AOB7S60
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SWITCHING TRANSISTOR C114
Abstract: C114 E S W transistor C114 transistor for C114 transistor IRGPC30FD2 C-111 C-113 C-114 C-115 ic c113 61
Text: Previous Datasheet Index Next Data Sheet PD - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes
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IRGPC30FD2
10kHz)
O-247AC
C-116
SWITCHING TRANSISTOR C114
C114 E S W transistor
C114 transistor
for C114 transistor
IRGPC30FD2
C-111
C-113
C-114
C-115
ic c113 61
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C-107
Abstract: C-108 IRGBC30FD2 c103 a ge
Text: Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes
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IRGBC30FD2
10kHz)
O-220AB
C-108
C-107
C-108
IRGBC30FD2
c103 a ge
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C-107
Abstract: C-108 IRGBC30FD2 transistor c107 m IRGBC30 c103 a ge
Text: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGBC30FD2
10kHz)
O-220AB
C-108
C-107
C-108
IRGBC30FD2
transistor c107 m
IRGBC30
c103 a ge
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Untitled
Abstract: No abstract text available
Text: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP7N60 N-Channel Mosfet Transistor • FEATURES • Drain Current -ID= 7A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min) • Static Drain-Source On-Resistance
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MTP7N60
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c103 a ge
Abstract: C-107 C-108 IRGBC30FD2
Text: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGBC30FD2
10kHz)
O-220AB
C-108
c103 a ge
C-107
C-108
IRGBC30FD2
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D-12
Abstract: IRGBC30F
Text: PD - 9.689A IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.1V
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IRGBC30F
10kHz)
O-220AB
D-12
IRGBC30F
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IRGBC30F
Abstract: D-12 IRGBC30
Text: PD - 9.689A IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.1V
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IRGBC30F
10kHz)
O-220AB
IRGBC30F
D-12
IRGBC30
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GC 380
Abstract: D-12 IRGBC40F
Text: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V
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IRGBC40F
10kHz)
O-220AB
GC 380
D-12
IRGBC40F
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IRGPC40F
Abstract: No abstract text available
Text: PD - 9.693A IRGPC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V
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IRGPC40F
10kHz)
O-247AC
IRGPC40F
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C6610
Abstract: GC 380 D-12 IRGBC40F
Text: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V
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IRGBC40F
10kHz)
O-220AB
C6610
GC 380
D-12
IRGBC40F
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UGP7N60 Preliminary Insulated Gate Bipolar Transistor 600V, SMPS N-CHANNEL IGBT DESCRIPTION The UTC UGP7N60 is an N-channel IGBT. it uses UTC’s advanced technology to provide customers with high input impedance, high switching speed and low conduction loss, etc.
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UGP7N60
UGP7N60
O-220
UGP7N60L-TA3-T
UGP7N60G-TA3-T
QW-R203-048
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IC C399
Abstract: IRGPC50MD2 c406 600V 25A Ultrafast Diode NS100
Text: Previous Datasheet Index Next Data Sheet PD - 9.1145A IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPC50MD2
10kHz)
O-247AC
C-406
IC C399
IRGPC50MD2
c406
600V 25A Ultrafast Diode
NS100
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500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,
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Power247TM,
500W TRANSISTOR AUDIO AMPLIFIER
IN5822 diode
irfs6408
220V ac to 9V dc converter circuit
DC 48v AC 220v 500w smps
P-Channel MOSFET 800v
SB550 transistor
drive motor 10A with transistor P channel MOSFET
P channel 600v 20a IGBT
list of n channel power mosfet
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Untitled
Abstract: No abstract text available
Text: Ordering number: ENN6994 | NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. ♦High breakdown voltage VcB0 = 1 600V . * High reliability^Adoption of HVP process).
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ENN6994
2SC5792
2SC5792]
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APT30GF60BN
Abstract: 1256C 2Q150
Text: ADVANCED POWER TECHNOLOGY b lE 0 25 7 *5 CH 0 0 0 0 0 7 4 D A 4*57 IAVP d v a n c e d Pow er T e c h n o lo g y 0 APT30GF60BN 600V 30A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT30GF60BN
1256C
2Q150
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PDF
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