TRANSISTOR 600V 75A Search Results
TRANSISTOR 600V 75A Result Highlights (4)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| LMZM23600V3SILR |
|
36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
|
|
|
| LMZM23600V3SILT |
|
36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
|
|
|
| LMZM23600V5SILR |
|
36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
|
|
|
| LMZM23600V5SILT |
|
36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
|
|
TRANSISTOR 600V 75A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRGPC56Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate |
OCR Scan |
4fl5S45S IRGPC56 O-247AC 554S2 0G10b43 IRGPC56 | |
QCA75A60
Abstract: QCB75A60 QCA75A QCA75A40 QCB75A40 1A 300V DARLINGTON 1A 300V TRANSISTOR
|
Original |
QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 400/600V QCA75A40 QCA75A60 QCB75A40 QCB75A60 QCA75A40 QCA75A60 QCB75A60 1A 300V DARLINGTON 1A 300V TRANSISTOR | |
|
Contextual Info: V23990-P706-F-PM final data sheet flow 90PACK 1 600V/ 75A V23990-P706-F-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage |
Original |
V23990-P706-F-PM 90PACK V23990-P706-F-01-14 | |
transistor RJH 30Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM75TX-HB • lc • Vcex • hFE Collector current. 75A Collector-emitter voltage. 600V DC current gain. 750 |
OCR Scan |
QM75TX-HB E80276 E80271 11-M4 transistor RJH 30 | |
cf rh transistorContextual Info: MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75CY-H lc Collector current. 75A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM75CY-H E80276 E80271 cf rh transistor | |
|
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H lc Collector current. 75A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM75DY-H E80276 E80271 | |
|
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM75TX-HB Ic Collector current. 75A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 750 Insulated Type |
OCR Scan |
QM75TX-HB E80276 E80271 | |
E80276
Abstract: QM75DY-HB QM75DY-H
|
Original |
QM75DY-HB E80276 E80271 150mA E80276 QM75DY-HB QM75DY-H | |
E80276
Abstract: QM75TX-H all transistor
|
Original |
QM75TX-H E80276 E80271 E80276 QM75TX-H all transistor | |
i321 diode
Abstract: I321 X 25 UMI diode i321 Mitsubishi transistor
|
OCR Scan |
QM75TX-H E80276 E80271 i321 diode I321 X 25 UMI diode i321 Mitsubishi transistor | |
CT75AM12Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE CT75AM-12 OUTLINE DRAWING Dimensions in mm 5 2 0M A X. 2 • V c e s . 600V . 75A |
OCR Scan |
CT75AM-12 CT75AM12 | |
Mitsubishi transistor
Abstract: QM75HA-H E80276
|
Original |
QM75HA-H E80276 E80271 Mitsubishi transistor QM75HA-H E80276 | |
all transistor
Abstract: E80276 QM75TF-HB
|
Original |
QM75TF-HB E80276 E80271 150mA all transistor E80276 QM75TF-HB | |
QM75CY-H
Abstract: E80276
|
Original |
QM75CY-H E80276 E80271 QM75CY-H E80276 | |
|
|
|||
QM75DY-H
Abstract: E80276
|
Original |
QM75DY-H E80276 E80271 QM75DY-H E80276 | |
|
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-H lc Collector current. 75A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 75 Insulated Type |
OCR Scan |
QM75E2Y/E3Y-H E80276 E80271 | |
|
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE QM75TX-H • lc Collector current. 75A • Vcex Collector-emitter voltage.600V • hFE DC current gain. 75 • Insulated Type |
OCR Scan |
QM75TX-H E80276 E80271 | |
Mitsubishi transistor
Abstract: mitsubishi servo power module
|
OCR Scan |
QM75DY-H E80276 E80271 Mitsubishi transistor mitsubishi servo power module | |
|
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM75HA-H Collector current. . 75A • V c e x Collector-emitter voltage. . 600V • hFE DC current gain. . 75 • Insulated Type |
OCR Scan |
QM75HA-H E80276 E80271 | |
E80276Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-H • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75 |
Original |
QM75E2Y/E3Y-H E80276 E80271 E80276 | |
|
Contextual Info: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A |
Original |
AUIRGP4066D1 AUIRGP4066D1-E | |
E80276
Abstract: QM100TX1-HB QM100TX1HB
|
Original |
QM100TX1-HB E80276 E80271 150mA E80276 QM100TX1-HB QM100TX1HB | |
auirgp4066d1
Abstract: AUIRGP4066 AUP4066D1 auirgp4066d1-e
|
Original |
AUIRGP4066D1 AUIRGP4066D1-E AUIRGP4066 AUP4066D1 auirgp4066d1-e | |
IGBT 4000V ICM 400A
Abstract: IGBT 4000V
|
Original |
96410B AUIRGP4066D1 AUIRGP4066D1-E IGBT 4000V ICM 400A IGBT 4000V | |