Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 600V 75A Search Results

    TRANSISTOR 600V 75A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 600V 75A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRGPC56

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		4fl5S45S IRGPC56 O-247AC 554S2 0G10b43 IRGPC56 PDF

    QCA75A60

    Abstract: QCB75A60 QCA75A QCA75A40 QCB75A40 1A 300V DARLINGTON 1A 300V TRANSISTOR
    Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 M QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 75A, VCEX 400/600V


    Original     		QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 400/600V QCA75A40 QCA75A60 QCB75A40 QCB75A60 QCA75A40 QCA75A60 QCB75A60 1A 300V DARLINGTON 1A 300V TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: V23990-P706-F-PM final data sheet flow 90PACK 1 600V/ 75A V23990-P706-F-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage


    Original     		V23990-P706-F-PM 90PACK V23990-P706-F-01-14 PDF

    transistor RJH 30

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM75TX-HB • lc • Vcex • hFE Collector current. 75A Collector-emitter voltage. 600V DC current gain. 750


    OCR Scan     		QM75TX-HB E80276 E80271 11-M4 transistor RJH 30 PDF

    cf rh transistor

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75CY-H lc Collector current. 75A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM75CY-H E80276 E80271 cf rh transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H lc Collector current. 75A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM75DY-H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM75TX-HB Ic Collector current. 75A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		QM75TX-HB E80276 E80271 PDF

    E80276

    Abstract: QM75DY-HB QM75DY-H
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-HB • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750


    Original     		QM75DY-HB E80276 E80271 150mA E80276 QM75DY-HB QM75DY-H PDF

    E80276

    Abstract: QM75TX-H all transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE QM75TX-H • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75


    Original     		QM75TX-H E80276 E80271 E80276 QM75TX-H all transistor PDF

    i321 diode

    Abstract: I321 X 25 UMI diode i321 Mitsubishi transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE QM75TX-H • lc • V c ex • hFE Collector current.75A Coilector-emitter voltage. 600V DC current gain.75


    OCR Scan     		QM75TX-H E80276 E80271 i321 diode I321 X 25 UMI diode i321 Mitsubishi transistor PDF

    CT75AM12

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE CT75AM-12 OUTLINE DRAWING Dimensions in mm 5 2 0M A X. 2 • V c e s . 600V . 75A


    OCR Scan     		CT75AM-12 CT75AM12 PDF

    Mitsubishi transistor

    Abstract: QM75HA-H E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM75HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM75HA-H • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75


    Original     		QM75HA-H E80276 E80271 Mitsubishi transistor QM75HA-H E80276 PDF

    all transistor

    Abstract: E80276 QM75TF-HB
    Text: MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE QM75TF-HB • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750


    Original     		QM75TF-HB E80276 E80271 150mA all transistor E80276 QM75TF-HB PDF

    QM75CY-H

    Abstract: E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75CY-H • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75


    Original     		QM75CY-H E80276 E80271 QM75CY-H E80276 PDF

    QM75DY-H

    Abstract: E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75


    Original     		QM75DY-H E80276 E80271 QM75DY-H E80276 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-H lc Collector current. 75A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM75E2Y/E3Y-H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE QM75TX-H • lc Collector current. 75A • Vcex Collector-emitter voltage.600V • hFE DC current gain. 75 • Insulated Type


    OCR Scan     		QM75TX-H E80276 E80271 PDF

    Mitsubishi transistor

    Abstract: mitsubishi servo power module
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H • • • • • lc Collector current. 75A V cex Collector-emitter voltage. 600V hFE DC current gain.75


    OCR Scan     		QM75DY-H E80276 E80271 Mitsubishi transistor mitsubishi servo power module PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM75HA-H Collector current. . 75A • V c e x Collector-emitter voltage. . 600V • hFE DC current gain. . 75 • Insulated Type


    OCR Scan     		QM75HA-H E80276 E80271 PDF

    E80276

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-H • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75


    Original     		QM75E2Y/E3Y-H E80276 E80271 E80276 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A


    Original     		AUIRGP4066D1 AUIRGP4066D1-E PDF

    E80276

    Abstract: QM100TX1-HB QM100TX1HB
    Text: MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE INSULATED TYPE QM100TX1-HB • • • • • IC Collector current . 100A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750


    Original     		QM100TX1-HB E80276 E80271 150mA E80276 QM100TX1-HB QM100TX1HB PDF

    auirgp4066d1

    Abstract: AUIRGP4066 AUP4066D1 auirgp4066d1-e
    Text: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses


    Original     		AUIRGP4066D1 AUIRGP4066D1-E AUIRGP4066 AUP4066D1 auirgp4066d1-e PDF

    IGBT 4000V ICM 400A

    Abstract: IGBT 4000V
    Text: PD - 96410B AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C VCES = 600V Low VCE ON Trench IGBT Technology Low switching losses IC(Nominal) = 75A


    Original     		96410B AUIRGP4066D1 AUIRGP4066D1-E IGBT 4000V ICM 400A IGBT 4000V PDF