TRANSISTOR 5D Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

smd transistor marking 5D

Abstract: transistor 5d smd smd transistor 5d sot-23 CMBT4125 ic 556 specifications MARKING SMD PNP TRANSISTOR br smd transistor 5d
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE

transistor 5d smd

Abstract: smd transistor marking 5D smd transistor 5d smd transistor 5d sot-23 smd diode marking 5d diode 5d smd smd diode 5d CMBT4125 MARKING 350 IC 5D SMD Transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: CMBT4125 GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = CO LLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

SGA8543Z-EVB2

Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

transistor 5d smd

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS

CMBT4125

Contextual Info: CMBT4125 GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 0.09 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 0.60 0.40 _ 2 . 00 _ 1.80 ABSOLUTE MAXIMUM RATINGS

transistor 5d smd

Abstract: smd transistor 5d sot-23 smd transistor marking 5D smd transistor 5d 5D SMD Transistor 5d smd sot-23 ts 4141 TRANSISTOR smd 5d smd transistor data CMBT4125 MARKING SMD pnp TRANSISTOR ec
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: CMBT4125 L GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0 .14 0.48 0.38 3 Pin configuration 1 = BASE 2 - EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.8ÌT 0.60 0.40 2.00 1.80 ABSOLUTE MAXIMUM RATINGS

2sc2904 TRANSISTOR

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dim ensions in mm R1 FEATURES • High gain: Gpe ^ 1 1 -5dB

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

2SC3908

Abstract: op 30MHZ PORCELAIN dust cap LC 7w RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3908 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 3908 is a silicon NPN epitaxial planar typ e transistor Dim ensions in m m designed fo r H F pow er am p lifie rs applications. R1 FEATURES • High pow er gain: G pe ^ 1 1 .5dB

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK566-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

marking 5b philips

Contextual Info: DISCRETE SEMICONDUCTORS BC807W PNP general purpose transistor Product specification Supersedes data of 1997 Jun 09 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification PNP general purpose transistor BC807W FEATURES

301 marking code PNP transistor

Abstract: bc807 marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W PNP general purpose transistor Product specification Supersedes data of 1997 Jun 09 1999 May 18 Philips Semiconductors Product specification PNP general purpose transistor BC807W FEATURES PINNING

smd JSs 75

Abstract: smd JSs smd JSs transistor smd JSs diode transistor 5d smd BUK9606-55A smd JSs 85
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC807 PNP general purpose transistor Product specification Supersedes data of 1997 Feb 28 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose transistor BC807 FEATURES PINNING

BFG94

Abstract: MBB780 TRANSISTOR HANDBOOK MBB788
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain

16HHF1

Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

RD16HHF1

Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

Contextual Info: Product specification P hilips S em iconductors BC807W; BC808W PNP general purpose transistor PIN CONFIGURATION FEATURES • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and amplification.