TRANSISTOR 5CT Search Results

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eifect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for

Contextual Info: CHK025A-SOA 25W Power Packaged Transistor GaN HEMT on SiC Description The CHK025A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and

Contextual Info: CHK080A-SRA 80W Power Packaged Transistor GaN HEMT on SiC Description The CHK080A-SRA is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and

Contextual Info: BC807-16W/-25W/-40W Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate

1w200

Contextual Info: MICRO GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general purpose industrial applications.

TRANSISTOR A104

Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15
Contextual Info: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general

5Ct transistor

Abstract: 5Cs transistor transistor 5ct marking 5Ct sot transistor 5cs 5Ct marking code marking 5cs marking code 5cs MARKING 5cR MARKING 5ct
Contextual Info: BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate

5Ct transistor

Abstract: 5Cs transistor transistor 5ct
Contextual Info: BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate

MRF911

Abstract: LA01 IS21I2 case 317-01
Contextual Info: MOTOROLA SC XSTRS/R F 4bE I> b3b?254 M OTOROLA O tm m i T -3 1 - l° l • SEMICONDUCTOR TECHNICAL DATA MRF911 The R F L in e fT * 5.0 GHz 9 30 mA HIG H FREQUENCY TRANSISTOR NPN SILIC O N HIG H FREQUENCY TRANSISTO R NPN SILICON . . . designed primarily for use in high-gain, low-noise tuned and

Contextual Info: SIEMENS BF 770A NPN Silicon RF Transistor F eature • For IF am p lifiers in T V -sa t tuners and for VC R m odulators E S D : E le ctro sta tic d isch a rg e sensitive device, o b se rve handling p recautions! T yp e ^ M arking j BF 770 A ' IS O rd erin g C o d e

Contextual Info: 2SD1766 h~7 > y Z $ / T ransistors NPN y ' J ^ > b z ? > ' s Z 2 4, ^ 3 *illli ffl/Meclium Power Amp. 2SD 1766 Epitaxial Planar NPN Silicon Transistor • ^ K T liill/D im e n s io n s U n it: mm • 1) =l P c = 2 W T '* S (40X i .6±0.1 1^ i'-5-cT| .5

FPT-16P-M06

Abstract: MB3761 MB3769A PC-2137
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching

MB74HC04

Abstract: MB3769 mb74 l7cc MB3769A
Contextual Info: The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparatorto construct very high speed switching regulator system up to 700 kHz. Output is suitable for power MOS FET drive

MB74HC04

Abstract: MB3761 FPT-16P-M06 MB3769A zener diode 15 v
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching

MB74HC04

Abstract: mb3769 FPT-16P-M06 MB3761 MB3769A MB3769AP MB3769APF transistor FET
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-4E ASSP SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching regulator

FPT-16P-M06

Abstract: MB3761 MB3769A differential comparator
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching

zener diode 15 v

Abstract: 5 volts ZENER DIODE 5Ct transistor dead time control MB3761 mb3769 ups 700 FPT-16P-M06 MB3769A
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band

VL811

Abstract: DS04-27202-5E MB3769A
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-5E ASSP BIPOLAR SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27202-6Ea ASSP BIPOLAR SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu Microelectronics MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to

Diode zener 6281

Abstract: MB3769A MB3761 mb3769 FPT-16P-M06 MB3769AP MB74
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27202-6Ea ASSP BIPOLAR SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu Microelectronics MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

marking code fujitsu MOSFET

Abstract: FPT-16P-M06 MB3761 MB3769A transistor 5ct MB3769AP MB3769A OF FET
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-6E ASSP BIPOLAR SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high

Halbleiterbauelemente DDR

Abstract: information applikation mikroelektronik Heft 12 information applikation mikroelektronik applikation heft VEB mikroelektronik mikroelektronik DDR Mikroelektronik Information Applikation mikroelektronik Heft "Mikroelektronik" Heft
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