TRANSISTOR 5C5 Search Results

Contextual Info: CMLT5551 SURFACE MOUNT SILICON DUAL, HIGH VOLTAGE NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface

b12 7d diode

Contextual Info: IPB034N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features P 6? ABH>3 A53 C96931C9? > =? C? A 4A9E5B1>4 43 43 , & , P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H .( J R 9H"[Z#$YMc +&, Y" I9 )( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#

IPA105N15N3

Abstract: IPA105N15N 81a diode
Contextual Info: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H -( J R  , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P   S ? @5A1C9>7 C5=@5A1CDA5

65A3

Abstract: 5E DIODE marking c-9
Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  I9   P ' 3 81>>5< >? A=1<<5E5<

B1C DIODE

Abstract: IPB039N10N3 marking 1c marking a5 4r diode
Contextual Info: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

65a3

Abstract: be5a IPB025N10N3G V9910 95E-9
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

IPB025N10N3

Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

Contextual Info: IPB090N06N3 G IPP093N06N3 G Id\Q  3 Power-Transistor Product Summary Features P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H .( J R ,?>=1G฀,& 1 Y I9 -(

Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G  3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&

2N3553

Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
Contextual Info: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes

IPP093N06N3G

Contextual Info: IPB090N06N3 G IPP093N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &    I9 .( J 1 Y" -( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#

Contextual Info: IPB039N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH

Contextual Info: IPA105N15N3 G TM  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H -( J R ,?>=1G฀ )(&- Y I9 +/ 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀ ฀S฀?@5A1C9>7฀C5=@5A1CDA5

Contextual Info: IPB025N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc *&- Y I9 )0( 6 P฀GCA5=5<H฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH

Transistor 5C5

Abstract: MARKING 5c5 CMLT5551
Contextual Info: Central CMLT5551 SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar

Transistor 5C5

Abstract: CMLT5551
Contextual Info: CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar

Contextual Info: CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar

CA3062

Abstract: CD40338 H5610 ic 4026b 3ssv monsanto
Contextual Info: ^ Tex a s In s t r u m e n t s CD4026B, CD4033B Types Data sheet acquired from Harris S em iconductor SCHS031 CMOS Decade Counters/Dividers High-Voltage Types <20-Volt Rating With Decoded 7-Segment Display Outputs and: Display Enable — CD4026B Ripple Blanking — CD40336

ANDIGILOG

Abstract: asc7611 AMD Athlon 64 X2 AMD Athlon 64 X2 3000 ADE3000HAX5DC AMD Athlon 64 X2 thermal 2N3904 2N3906 MMBT3904 Laptop motherboard thermal temp. sensing block diagram laptop intel MOTHERBOARD CIRCUIT diagram
Contextual Info: aSC7611 HARDWARE MONITOR WITH INTEGRATED FAN CONTROL PRODUCT SPECIFICATION Preliminary Specification Measurement System The aSC7611 has a two wire digital interface compatible with SMBus 2.0. Using a 10-bit ΣΔ- ADC, the aSC7611 measures the temperature of two remote diode connected

receiver philips fr 310

Abstract: 173 MHz RF receiver "Pager receiver" c10c3 KS 2152 tl 4216 4 MHz Oscillator pcf5001 POCSAG POCSAG Receiver
Contextual Info: Philips Semiconductors Product specification Advanced pager receiver UAA2082 FEATURES GENERAL DESCRIPTION • Wide frequency range: VHF, UHF and 900 MHz bands The UAA2082 is a high-performance low-power radio receiver circuit primarily intended for VHF, UHF and

Contextual Info: MIC3001 FOM Management IC with Internal Calibration General Description Features The MIC3001 enables the implementation of sophisticated, hot-pluggable fiber optic transceivers with intelligent laser control and an internally calibrated Digital Diagnostic Monitoring Interface per SFF-8472. It

MIC3001

Abstract: MIC3001BML MIC3001BMLTR MIC3001GML SY89835U POH SOT23 MARKING 27h SOT-23 AXH marking ok laser diode sdh 64
Contextual Info: MIC3001 SFP Management IC with Internal Calibration General Description Features The MIC3001 enables the implementation of sophisticated, hot-pluggable fiber optic transceivers with intelligent laser control and an internally calibrated Digital Diagnostic Monitoring Interface per SFF-8472. It

MIC3001GML

Abstract: INFINEON PART MARKING 252 laser diode samsung W6 marking sot-23 samsung laser diode MIC3001 MIC3001BML MIC3001BMLTR MIC3002 SY89835U
Contextual Info: MIC3001 FOM Management IC with Internal Calibration Consider MIC3002 for New Designs General Description Features The MIC3001 enables the implementation of sophisticated, hot-pluggable fiber optic transceivers with intelligent laser control and an internally calibrated

mic3003

Abstract: DETAILS of ic 4071
Contextual Info: MIC3001 FOM Management IC with Internal Calibration Consider MIC3003 for New Designs General Description Features The MIC3001 enables the implementation of sophisticated, hot-pluggable fiber optic transceivers with intelligent laser control and an internally calibrated digital diagnostic