BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG135 amplifier
BFG135
BFG135 - BFG135
MBB300
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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nec 2561
Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
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2SC5337
2SC5337
2SC3356
nec 2561
NEC 2561 transistor
2561 nec
2561 a nec
NEC semiconductor 2561
transistor NEC 2561
P1093
100MHZ
200MHZ
2SC3356
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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H11AA1 45
Abstract: 303-113 H11AA1
Text: Issued March 1997 232-5648 Data Pack F ac input to transistor output opto-isolator Data Sheet RS stock numbers 303-113, 585-258 The H11AA1 RS stock no 585-258 is an ac input transistor output opto-isolator. The H11AA1 consists of two gallium arsenide infra-red emitting diodes,
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H11AA1
H11AA1
H11AA1 45
303-113
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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BLV862
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification File under Discrete Semiconductors, SC08a 1996 Jun 11 Philips Semiconductors Preliminary specification UHF linear push-pull power transistor FEATURES
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BLV862
SC08a
OT262B
SCA49
127041/1200/02/pp8
BLV862
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PHP109
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP109 P-channel enhancement mode MOS transistor Product specification File under Discrete Semiconductors, SC07 1996 Jun 11 Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP109 FEATURES
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PHP109
OT96-1)
SCA49
117061/1200/01/pp12
PHP109
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automotive ignition tip162
Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —
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BU323AP
BU323AP
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
automotive ignition tip162
bc337 cross-reference
BU108
BD390 cross reference
replacement transistor BC337
BUX48A
2SD1815 "cross reference"
TIP102 Darlington transistor
Motorola MJ15022
MJ1000
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BLW898
Abstract: MGD531
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a 1996 Jul 16 Philips Semiconductors Product specification UHF linear power transistor BLW898
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BLW898
SC08a
OT171A
BLW898
SCA50
127041/1200/02/pp12
MGD531
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MJE15020
Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment
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MJE340
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
MJE15020
DTS423
mje15033 replacement
2SC243
BD388-5
2SC1826
BD263
2SC1903
SE9302
2SA698
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marking code 10 sot23
Abstract: marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ transistor Gigahertz BFR92AW BFR92A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR92AW NPN 5 GHz wideband transistor Product specification Supersedes data of October 1992 File under discrete semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW
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BFR92AW
OT323
BFR92AW
BFR92A.
CGY2020G
SCA50
647021/1200/01/pp12
marking code 10 sot23
marking code ce SOT23
RF NPN POWER TRANSISTOR 2.5 GHZ
transistor Gigahertz
BFR92A
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BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD166
BD165
BD166
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BUS48AP
2SC1381
mje15033 replacement
2SA698
BD477
BD139.16
2N307
2SC1224
2SD549
BD139.10
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BFG16A
Abstract: CTS100
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 2 GHz wideband transistor FEATURES
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BFG16A
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG16A
CTS100
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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NEC 2561
Abstract: NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such.
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2SC5337
2SC5337
2SC3356
NEC 2561
NEC 2561 transistor
2561 nec
transistor NEC 2561
NEC 2561 h
NEC D 809 F
2561 a nec
NEC semiconductor 2561
nec 2561 4 pin
transistor NEC D 586
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery
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BUK637-400B
BUK637-400B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-Y0OA/B
BUK456
-100A
-100B
T0220AB
BUK456-100A/B
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KST4126
Abstract: marking E3
Text: KST4126 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST4126
OT-23
-10HA,
-50mA,
100MHz
-100mA,
300//s,
00251ED
KST4126
marking E3
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