TRANSISTOR 50A Search Results

QCA50A

Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
Contextual Info: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V

Contextual Info: TRANSISTOR M O D U L E three phases bridge type QF50AA40/60 Q F 50A A is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

tyco igbt

Abstract: function of igbt nf016 V23990-P430-F-01-14 V23990-P430-F-PM D8552 tyco igbt 1200V flowPACK V23990-P430-F
Contextual Info: V23990-P430-F-PM final datasheet V23990-P430-F-01-14 flowPACK 1, 1200V 50A Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current

BUK455-50A

Abstract: BUK455-50B buk455 15 1E41 DPP100-24 T0220AB
Contextual Info: Philips Components BUK455-50A BUK455-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK453-50B

Abstract: BUK453-50A R2d DIODE BUK453 T0220AB buk453 50B
Contextual Info: BUK453-50A BUK453-50B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: V23990-P705-F-PM final data sheet flow 90PACK 1 600V/ 50A V23990-P705-F-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

K1 transistor

Contextual Info: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR „ DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications „ FEATURES * Very high input impedance

TIC 122 Transistor

Abstract: sot171 outline heatsink catalogue SOT171 BLV910 TIC 220 MLC663
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is

BUK553-50B

Abstract: BUK553-50A buk553 T0220 PACKAGE buk553 T0220AB 50A POWER TRANSISTOR FOR SMPS
Contextual Info: Philips Components BUK553-50A BUK553-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK555

Abstract: BUK555-50A BUK555-50B BUK55S-50A T0220AB 600 V logic level fet 100-PJ
Contextual Info: Philips Components BUK555-50A BUK555-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

QCA50AA120

Abstract: TERMINAL M5 QCA50AA100 diode 1000v 50a vvvf motor E76102
Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

BUK436-50B

Abstract: BUK436-50A 7725A
Contextual Info: Philips Components BUK436-50A BUK436-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect power transistor in a lastic envelope. he device is intended for use in Switched M ode Pow er Supplies S M P S , motor control, welding,

QF50AA60

Abstract: QF50AA40 50a 600v power darlington transistor
Contextual Info: TRANSISTOR MODULE THREE PHASES BRIDGE TYPE QF50AA40/60 QF50AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

QCA50AA100

Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 （M） QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

QCA50AA100

Contextual Info: TRANSISTOR MODULE QCA50AA100 U L ;E 76102 M is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. T he mounting base of the module is electrically isolated

darlington power transistor

Abstract: QCA50AA120 PT 1200
Contextual Info: TRANSISTOR MODULE QCA50AA120 UL;E76102 （M） QCA50AA120 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

BUK542

Abstract: BUK542-50A BUK542-50B 1-B-03
Contextual Info: N AMER PHILIPS/DISCRETE: 5SE D • bbB3T31 0G2G5fe.5 S ■ PowerMOS transistor Logic Level FET BUK542-50A BUK542-50B T~ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

DD 127 D TRANSISTOR

Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
Contextual Info: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies