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    TRANSISTOR 5 GR Search Results

    TRANSISTOR 5 GR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5 GR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bfg97

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223


    Original     		PDF BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 bfg97

    BFG97

    Abstract: BFG31 TRANSISTOR BFg97 sc7313
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223


    Original     		PDF BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 BFG97 BFG31 TRANSISTOR BFg97 sc7313

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is


    Original     		PDF BFR106 MSB003 R77/02/pp10

    BFR106

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is


    Original     		PDF BFR106 MSB003 R77/02/pp10 BFR106 MSB003

    2SA1036

    Abstract: IMT17 IMT17-AG6-R IMT17L-AG6-R
    Text: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES 4 *Two 2SA1036 chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = - 500mA 5 6 3 STRUCTURE 4 5 2 1


    Original     		PDF IMT17 2SA1036 500mA OT-26 IMT17L IMT17-AG6-R IMT17L-AG6-R QW-R215-006 IMT17 IMT17-AG6-R IMT17L-AG6-R

    BFR106

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is


    Original     		PDF BFR106 BFR106 MSB003 R77/02/pp10 771-BFR106-T/R

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated


    Original     		PDF BFR93AW OT323 BFR93AW BFR93A. R77/02/pp14

    BFR93 application note

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF


    Original     		PDF BFT93 R77/02/pp10 BFR93 application note

    BFT93

    Abstract: BFR93 application note bfr93 MSB003 BFR93A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF


    Original     		PDF BFT93 R77/02/pp10 BFT93 BFR93 application note bfr93 MSB003 BFR93A

    SOT23 W1P NXP

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF


    Original     		PDF BFT92 MSB003act R77/02/pp10 SOT23 W1P NXP

    W1p TRANSISTOR

    Abstract: BFT92 transistor w1P w1p npn SOT23 W1P BFR92 application note SOT23 W1P NXP w1p 60 transistor Bft92 W1p 48 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF


    Original     		PDF BFT92 R77/02/pp10 W1p TRANSISTOR BFT92 transistor w1P w1p npn SOT23 W1P BFR92 application note SOT23 W1P NXP w1p 60 transistor Bft92 W1p 48 TRANSISTOR

    DIN 3021-3 STANDARD

    Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
    Text: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6


    Original     		PDF 30213-EN-070201 DIN 3021-3 STANDARD DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp

    BFR92A application note

    Abstract: e1/BFR92A application note BFT92 marking code P2p SOT23 BFR90A BFR92A MSB003 marking code P2p
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR92A NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor


    Original     		PDF BFR92A BFT92. MSB003 SCA55 127127/00/02/pp12 BFR92A application note e1/BFR92A application note BFT92 marking code P2p SOT23 BFR90A BFR92A MSB003 marking code P2p

    BFR93 application note

    Abstract: transistor BFR93 BFR91 application note bfr93 BFR91 BFT93 MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93 NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93


    Original     		PDF BFR93 BFT93. MSB003 SCA55 127127/00/02/pp12 BFR93 application note transistor BFR93 BFR91 application note bfr93 BFR91 BFT93 MSB003

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure DESCRIPTION


    Original     		PDF BFS25A OT323 OT323 MBC870 OT323. R77/03/pp13

    MRC034

    Abstract: MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure


    Original     		PDF BFS25A OT323 OT323 MBC870 OT323. R77/03/pp13 MRC034 MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053

    MCD141

    Abstract: marking code V11 MCD144 marking code s22 TS165 MCD148 MRC038 Philips mcd139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor


    Original     		PDF BFG25A/X OT143B MSB014 SCA55 127127/00/03/pp12 MCD141 marking code V11 MCD144 marking code s22 TS165 MCD148 MRC038 Philips mcd139

    SD1222-5

    Abstract: IC 785 SD1222
    Text: SD1222-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES:


    Original     		PDF SD1222-5 SD1222-5 the118-136 IC 785 SD1222

    BFR93A

    Abstract: BFR93AW MBG207
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain


    Original     		PDF BFR93AW OT323 BFR93AW BFR93A. R77/02/pp14 BFR93A MBG207

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability


    Original     		PDF BFG31 OT223 MSB002 OT223. BFG97. R77/02/pp9

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain


    Original     		PDF BFR93AW OT323 BFR93A. BFR93AW MBC870 R77/02/pp14 771-BFR93AW-T/R

    MARKING W2 SOT23 TRANSISTOR

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBC1623L7 IM E D £ V ì b l l M a 0007251^5 ^ NPN EPITAXIAL SILICON TRANSISTOR -AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic


    OCR Scan     		PDF MMBC1623L7 OT-23 MMBC1623L3 MARKING W2 SOT23 TRANSISTOR

    2N6518

    Abstract: 2N6520
    Text: SAMSUNG SEMI C ONDUCTOR INC 2N6518 14E D | 7^4142 00071^3 S | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISTOR T O -9 2 ABSOLUTE MAXIMUM RATINGS Ta=25°C f ; Characteristic Symbol Rating Unit -2 5 0 -2 5 0 -5 -5 0 0 -2 5 0 0 .6 25 5 150 —5 5 ~ 1 50


    OCR Scan     		PDF 2N6518 T-29-21 2N6520 10OfjAe -10mA, -20mA, -30mA, -50mA,

    2n4401

    Abstract: No abstract text available
    Text: 2N4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V CEo = 40V • Collector Dissipation: Pc m ax =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO 60 40 6 600 625 150 -5 5 -1 5 0


    OCR Scan     		PDF 2N4401 625mW 2N4400 500mA, 150mA, lc-500m 100KHz 100MHz 2n4401