TRANSISTOR 470 Search Results

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR

Contextual Info: NXP UHF/DVB-T power LDMOS transistor BLF888A S The most powerful LDMOS broadcast transistor delivering 125 W output power Designed for broadband operation (470 and 860 MHz), this LDMOS transistor boasts one-octave wideband operation, extremely good ruggedness, very high output power, high efficiency, high

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network

1N4148 SMD PACKAGE

Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 SMD DIODE 1N4007 smd zener diode code M1 RESISTOR AXIAL 0207 FAIRCHILD 1n4007 smd diode smd zener diode code T2 smd code C2 zener diode bridge rectifier 1N4007 SMD DIODE 1N4007 DATASHEET
Contextual Info: Document reference: PCB reference: Date: March, 20 2006 STEVAL-IHT003V1 Company: STMicroelectronics Index Quantity Reference 1 1 Triac 2 1 SCR 3 1 PNP Transistor 4 1 NPN Transistor 5 1 N-Channel Transistor 6 1 Resistor 620 1/4W 1% 7 1 Resistor 470K 1/4W 1%

6aa marking

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

NEC K 2500

Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

2SC2150

Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

transistor 1000V 6A

Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
Contextual Info: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

transistor sc59 marking

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a

6aa marking

Abstract: 327 SOT-6
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

1N4001 transistor free

Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.

BY206

Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

BY206

Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

transistor D 2578

Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting

MDA337

Abstract: 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 Philips Semiconductors Product specification UHF power transistor BLU60/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope

transistor rf m 1104

Abstract: UHF TRANSISTOR TRIMMER capacitor 5-60 pF BLU97
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU97 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor designed for use in mobile

BLW33

Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

BLX94C

Abstract: MBH100 BLX94
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic

5bb1

Abstract: C11531E
Contextual Info: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic

BFG135 amplifier

Abstract: BFG135 BFG135 - BFG135 MBB300
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor