TRANSISTOR 4580 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

CQ 817

Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
Contextual Info: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.

AO4447AL

Contextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications.

AO4447AL

Contextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications.

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ic 4580

Abstract: KT 817 transistor 2SC4860 KT 817 transistor kt 801 EN4580
Contextual Info: Ordering number:EN4580 NPN Epitaxial Planar Silicon Transistor 2SC4860 UHF Converter, Local Oscillator Applications Features Package Dimensions • High cutoff frequency : fT=6.5GHz typ. · High gain : S21e2=11.5dB typ f=1GHz . · Small Cob : NF=0.65pF typ.

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

AON6405

Abstract: AON6405L
Contextual Info: AON6405L P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for load switch and battery protection applications.

transistor 4580

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD20N06HD HDTMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Dcvlce TMOS POWER FET 20 AMPERES 60 VOLTS RDS on = 0-045 OHM N-Channel Enhancement-Mode Silicon Gate

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

Contextual Info: 7 - F X series Switching Power Transistor 8a 2SC4580 NPN (TP8W45FX) O utline Dimensions Case : ITO-3P 5.5'O ’ 1 5 .0 ^ 3 ¿ 1 3 ±0.2 Date code o°u£«S£- @ r? "04580 EIAJ No. " B C I T O max 3.3-° 3 12.5ÌI 2.1MAX I 12.1 max = 0.2 J.0. 1.0*«-»

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

CF-221

Abstract: 50B4DIN41867
Contextual Info: TELEFUNKEN ELECTRONIC TTHLltFQIlMKiKl electronic QIC t • T - 2 / - 2 S— C F 221 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common Gate 1 configuration; In wireless telephone, broadcast sets, cabel TV and equipments with

transistor g23 mosfet

Abstract: 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922
Contextual Info: TELEFUNKEN ELECTRONIC fllC D ITilLitFQIKlKiMelectronic â^SQQ^b 000530b CF 922 Marked with: CF 4 Creative Technologies N-Channel-GaAs-MESFET-Tetrods Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common Gate 1 configuration;

v628

Abstract: CFK22 d200pa
Contextual Info: SIC D TELEFUNKEN ELECTRONIC TilUKFdDMKllM electronic • fl^SOOU 0005401 4 T - 3/- Z S~ CFK22 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common Gate 1 configuration;

TRANSISTOR BC 707

Abstract: CFK40 transistor bf 274 BF 273 transistor
Contextual Info: TELEFUNKEN ELECTRONIC SIC II • 8'IBOO‘ib 0Q05M13 = v -s z -a s - TitLKFtUlMKiMl electronic CFK40 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers up to 2 GHz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with

transistor bc 930

Abstract: transistor bc 248 transistor BC 247 cf930 BC 247 sot-23 D200-PA E33681 HAT2195WP BC 247 b transistor SOT-23 marking BF
Contextual Info: TELEFUNKEN ELECTRONIC filC D • CF 930 Marked with: CF 5 YHILilPQJMIKiM electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: QDDSBfifiO r- 3 / -zr Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

transistor bf 271

Abstract: CFK30 marking code CFK sot-23 MARKING CODE 0s transistor g23 mosfet 3704 transistor bc238c
Contextual Info: filC D TELEFUNKEN ELECTRONIC • fiTSGDTb OGOSMll 2 ■ ALCG T-3/-2i> M electronic CFK30 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with

CF300

Abstract: 50B4DIN41867 CF-300 telefunken mosfet marking code g1s transistor bf 222
Contextual Info: TELEFUNKEN ELECTRONIC filC D 0029426 A E G CORP • fi^EDDTb 000535*1 81C 0 53 5 9 ~ D CF 300 IFGlQJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

Transistor 4515

Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300
Contextual Info: TELEFUNKEN ELECTRONIC 0029426A E G CORP Û1C D • fl^EDGTb 000535*1 4 D \ 8ÏC 0 53 59~ CF 300 IFGlGJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

TRANSISTOR BC 814

Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Contextual Info: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with