TRANSISTOR 4242 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line

transistor VCE 6000V

Abstract: dual infrared diode Infrared Emitting Diode NTE3082
Contextual Info: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line

NTE3082

Abstract: NPN Darlington transistor transistor VCE 6000V
Contextual Info: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

Contextual Info: HI-SINCERITY Spec. No. : HE6739 Issued Date : 1994.05.18 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Contextual Info: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

M38527

Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
Contextual Info: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)

NTE398

Abstract: transistor VCE 6000V
Contextual Info: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3981 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified

NTE3081

Abstract: transistor VCE 6000V
Contextual Info: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified

irf740 mosfet

Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
Contextual Info: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF540 n-channel MOSFET BATTERY CHARGER

Abstract: 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger 48V to 12V buck transformer RF520 HEXFET Power MOSFET designer manual
Contextual Info: UNITRODE CORPORATION U-167 UC3578 TELECOM BUCK CONVERTER EVALUATION BOARD By Mark Dennis Unitrode Corporation ABSTRACT This application note describes a simple solution for a buck converter operating from an input of 15V to 72V with an N channel MOSFET switching transistor. Using this switch configuration requires a gate potential higher than the input

HEXFET Power MOSFET designer manual

Contextual Info: UCC1919 UCC2919 UCC3919 PRELIMINARY 3V to 8V Hot Swap Power Manager FEATURES DESCRIPTION • Precision Fault Threshold The UCC3919 family of Hot Swap Power Managers provide complete power management, hot swap, and fault handling capability. The UCC3919 features a duty ratio current limiting technique, which provides peak load capability while limiting the average power dissipation of the external pass transistor during fault conditions. The

Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power

6 pin DIL And Gate

Abstract: 92048 UC3725 circuit for using uc1725 DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725
Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power

circuit for using uc1725

Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power

Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power

92048

Abstract: UC3725N DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725 UC3725
Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power

92048

Abstract: DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725 UC3725 6 pin DIL And Gate
Contextual Info: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power