TRANSISTOR 42-10A DATA Search Results

c 3421 transistor

Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D
Contextual Info: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

TFK S 186 P

Abstract: K 2961 tv 2971 2SC2952 New Transistor Manual
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

HJ6668

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.03.01 Revised Date : 2000.11.01 Page No. : 1/3 HJ6668 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ6668 is designed for general-purpose amplifier and switching applications.

HU6668

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.03.01 Revised Date : 1999.08.01 Page No. : 1/3 HU6668 PNP EPITAXIAL PLANAR TRANSISTOR Description The HU6668 is designed for general-purpose amplifier and switching applications.

HU6388

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.03.01 Revised Date : 1999.08.01 Page No. : 1/3 HU6388 NPN EPITAXIAL PLANAR TRANSISTOR Description The HU6388 is designed for general-purpose amplifier and switching applications.

200W TRANSISTOR AUDIO AMPLIFIER

Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
Contextual Info: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.

P2804BDG

Abstract: nikos P2804BDG Niko-Sem TO-252 AUG-19-2004 NIKO-SEM P2804bDG TO252-DPAK niko-sem p2804
Contextual Info: NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Mode Field Effect Transistor TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 28mΩ 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Contextual Info: D C PWR-82330 ILC DATA DEVICE CORPORATION — SMART POWER 3-PHASE MOTOR DRIVE APPROX. 1/2 ACTUAL SIZE DESCRIPTION The PWR-82330 is a Smart Power 3-phase Motor Drive hybrid. The PWR82330 uses a MOSFET output stage with 100 Vdc rating, and can deliver 5A continuous, 10A peak current to the

Contextual Info: BDW93CF BDW93CF Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94CF respectively TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

P5506BDG

Abstract: P5506 niko-sem field effect transistor AUG-19-2004
Contextual Info: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P5506BDG TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 10A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

IR LFN

Abstract: 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

N2009LS

Contextual Info: DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -100V IC = -5A High Continuous Collector Current ICM = -10A Peak Pulse Current

AN04-001

Abstract: AXA010A0G93-SR C4532X5R1C226M FLTR100V10 TPSE476M025R0100
Contextual Info: Data Sheet April 8, 2008 Austin LynxTM 12 V SMT Non-isolated Power Modules: 10 – 14Vdc input; 1.2Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with

AN04-001

Abstract: C4532X5R1C226M FLTR100V10 J-STD-033 J-STD-033A TPSE476M025R0100 0.1 uf Ceramic Capacitors
Contextual Info: Data Sheet September 13, 2006 12V Austin LynxTM SMT Non-isolated Power Modules, Programmable: 10 – 14Vdc input; 0.75Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with

Contextual Info: GE Data Sheet 12V AustinLynxTM 10A: Non-Isolated DC-DC Power Module,Programmable 10Vdc –14Vdc input; 0.75Vdc to 5.5Vdc output; 10A Output Features ` RoHS Compliant • Compliant to RoHS EU Directive 2002/95/EC -Z versions • Compliant to ROHS EU Directive 2002/95/EC with lead

AN04-001

Abstract: AXA010A0G93-SR C4532X5R1C226M FLTR100V10 TPSE476M025R0100 0.1 uf Ceramic Capacitors
Contextual Info: Data Sheet March 14, 2006 Austin LynxTM 12 V SMT Non-isolated Power Modules: 10 – 14Vdc input; 1.2Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with

Contextual Info: Data Sheet September 30, 2009 12V Austin LynxTM SMT Non-isolated Power Modules, Programmable: 10 – 14Vdc input; 0.75Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with

Contextual Info: Data Sheet March 6, 2007 12V Austin LynxTM SMT Non-isolated Power Modules, Programmable: 10 – 14Vdc input; 0.75Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with

AN04-001

Abstract: C4532X5R1C226M FLTR100V10 J-STD-033 J-STD-033A TPSE476M025R0100 AXA010A0X3-SR 0.1 uf Ceramic Capacitors
Contextual Info: Data Sheet May 28, 2006 12V Austin LynxTM SMT Non-isolated Power Modules, Programmable: 10 – 14Vdc input; 0.75Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with

Contextual Info: Data Sheet September 30, 2009 Austin LynxTM 12 V SMT Non-isolated Power Modules: 10 – 14Vdc input; 1.2Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with