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    TRANSISTOR 42-10A DATA Search Results

    TRANSISTOR 42-10A DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 42-10A DATA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 3421 transistor

    Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D
    Text: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:


    Original     		PDF MSAGA11F120D MSAGA11F120D discretes\msae\MSAFX10N100AS c 3421 transistor 010-0041 IC350 power IGBT HTGB

    HJ6668

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.03.01 Revised Date : 2000.11.01 Page No. : 1/3 HJ6668 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ6668 is designed for general-purpose amplifier and switching applications.


    Original     		PDF HJ6668 HJ6668

    HU6668

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.03.01 Revised Date : 1999.08.01 Page No. : 1/3 HU6668 PNP EPITAXIAL PLANAR TRANSISTOR Description The HU6668 is designed for general-purpose amplifier and switching applications.


    Original     		PDF HU6668 HU6668

    HU6388

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.03.01 Revised Date : 1999.08.01 Page No. : 1/3 HU6388 NPN EPITAXIAL PLANAR TRANSISTOR Description The HU6388 is designed for general-purpose amplifier and switching applications.


    Original     		PDF HU6388 HU6388

    200W TRANSISTOR AUDIO AMPLIFIER

    Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier

    P2804BDG

    Abstract: nikos P2804BDG Niko-Sem TO-252 AUG-19-2004 NIKO-SEM P2804bDG TO252-DPAK niko-sem p2804
    Text: NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Mode Field Effect Transistor TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 28mΩ 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P2804BDG O-252 AUG-19-2004 P2804BDG nikos P2804BDG Niko-Sem TO-252 AUG-19-2004 NIKO-SEM P2804bDG TO252-DPAK niko-sem p2804

    Untitled

    Abstract: No abstract text available
    Text: BDW93CF BDW93CF Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94CF respectively TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BDW93CF BDW94CF O-220F BDW93CFTU O-220F-3

    P5506BDG

    Abstract: P5506 niko-sem field effect transistor AUG-19-2004
    Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P5506BDG TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 10A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P5506BDG O-252 AUG-19-2004 P5506BDG P5506 niko-sem field effect transistor AUG-19-2004

    Untitled

    Abstract: No abstract text available
    Text: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter


    Original     		PDF TIP145T/146T/147T TIP140T/141T/142T O-220 TIP145T TIP146T TIP147T

    N2009LS

    Abstract: No abstract text available
    Text: DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V


    Original     		PDF DMN2009LSS AEC-Q101 J-STD-020D DS31409 N2009LS

    Untitled

    Abstract: No abstract text available
    Text: DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V


    Original     		PDF DMN2009LSS AEC-Q101 J-STD-020D DS31409

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current


    Original     		PDF ZX5T953G OT223 -100V -90mV AEC-Q101 OT223 J-STD-020 DS33425

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -100V IC = -5A High Continuous Collector Current ICM = -10A Peak Pulse Current


    Original     		PDF ZXTP2013G OT223 -100V -90mV AEC-Q101 DS33714

    AN04-001

    Abstract: AXA010A0G93-SR C4532X5R1C226M FLTR100V10 TPSE476M025R0100
    Text: Data Sheet April 8, 2008 Austin LynxTM 12 V SMT Non-isolated Power Modules: 10 – 14Vdc input; 1.2Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with


    Original     		PDF 14Vdc 2002/95/EC 2002/95/EC DS03-079 AN04-001 AXA010A0G93-SR C4532X5R1C226M FLTR100V10 TPSE476M025R0100

    Untitled

    Abstract: No abstract text available
    Text: GE Data Sheet 12V AustinLynxTM 10A: Non-Isolated DC-DC Power Module,Programmable 10Vdc –14Vdc input; 0.75Vdc to 5.5Vdc output; 10A Output Features ` RoHS Compliant • Compliant to RoHS EU Directive 2002/95/EC -Z versions • Compliant to ROHS EU Directive 2002/95/EC with lead


    Original     		PDF 10Vdc 14Vdc 75Vdc 2002/95/EC 2002/95/EC AXA010A0X3-SR 14Vdc AXA010A0X3-SRZ CC109101326

    AN04-001

    Abstract: AXA010A0G93-SR C4532X5R1C226M FLTR100V10 TPSE476M025R0100 0.1 uf Ceramic Capacitors
    Text: Data Sheet March 14, 2006 Austin LynxTM 12 V SMT Non-isolated Power Modules: 10 – 14Vdc input; 1.2Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with


    Original     		PDF 14Vdc 2002/95/EC 2002/95/EC x3001 DS03-079 AN04-001 AXA010A0G93-SR C4532X5R1C226M FLTR100V10 TPSE476M025R0100 0.1 uf Ceramic Capacitors

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet September 30, 2009 12V Austin LynxTM SMT Non-isolated Power Modules, Programmable: 10 – 14Vdc input; 0.75Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with


    Original     		PDF 14Vdc 75Vdc 2002/95/EC 2002/95/EC DS03-097

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet March 6, 2007 12V Austin LynxTM SMT Non-isolated Power Modules, Programmable: 10 – 14Vdc input; 0.75Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with


    Original     		PDF 14Vdc 75Vdc 2002/95/EC 2002/95/EC Tempera19 x3001 DS03-097

    AN04-001

    Abstract: C4532X5R1C226M FLTR100V10 J-STD-033 J-STD-033A TPSE476M025R0100 AXA010A0X3-SR 0.1 uf Ceramic Capacitors
    Text: Data Sheet May 28, 2006 12V Austin LynxTM SMT Non-isolated Power Modules, Programmable: 10 – 14Vdc input; 0.75Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features Compliant to RoHS EU Directive 2002/95/EC -Z versions Compliant to ROHS EU Directive 2002/95/EC with


    Original     		PDF 14Vdc 75Vdc 2002/95/EC 2002/95/EC x3001 DS03-097 AN04-001 C4532X5R1C226M FLTR100V10 J-STD-033 J-STD-033A TPSE476M025R0100 AXA010A0X3-SR 0.1 uf Ceramic Capacitors

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet September 30, 2009 Austin LynxTM 12 V SMT Non-isolated Power Modules: 10 – 14Vdc input; 1.2Vdc to 5.5Vdc Output; 10A Output Current RoHS Compliant Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with


    Original     		PDF 14Vdc 2002/95/EC 2002/95/EC DS03-079

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    TFK S 186 P

    Abstract: K 2961 tv 2971 2SC2952 New Transistor Manual
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 470MHz, TFK S 186 P K 2961 tv 2971 2SC2952 New Transistor Manual

    Untitled

    Abstract: No abstract text available
    Text: D C PWR-82330 ILC DATA DEVICE CORPORATION — SMART POWER 3-PHASE MOTOR DRIVE APPROX. 1/2 ACTUAL SIZE DESCRIPTION The PWR-82330 is a Smart Power 3-phase Motor Drive hybrid. The PWR82330 uses a MOSFET output stage with 100 Vdc rating, and can deliver 5A continuous, 10A peak current to the


    OCR Scan     		PDF PWR-82330 PWR-82330 PWR82330 -9/92-5M

    IR LFN

    Abstract: 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF Tc-25 2SB816 IR LFN 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10