TRANSISTOR 406 SPECIFICATION Search Results

TRANSISTOR 406 SPECIFICATION Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 406 SPECIFICATION Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of	Original	0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS,	PDF
J294 Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of	Original	0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS, J294 SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W	PDF
100 CJB Abstract: TIP120 Text: TIP120 TO-220 DARLING TRANSISTOR NPN FEATURES * Power application TO-220 .114 (2.89) .102 (2.59) MECHANICAL DATA * * * * .184 (4.67) .155 (3.94) .147 (3.74) .406 (10.31) .394 (10.01) .176 (4.47) .054 (1.37) .046 (1.17) Case: Molded plastic Epoxy: UL 94V-O rate flame retardant	Original	TIP120 O-220 O-220 MIL-STD-202E 100 CJB TIP120	PDF
Untitled Abstract: No abstract text available Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION	Original	0405SC-1500M 0405SC-1500M 1500Watts, 125mA	PDF
SIT Static Induction Transistor Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION	Original	0405SC-1500M 0405SC-1500M 1500Watts, 125mA SIT Static Induction Transistor transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF	PDF
static induction transistor SIT Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR Text: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON	Original	0405SC-1000M 0405SC-1000M 1000Watts, static induction transistor SIT "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor "Static Induction Transistor" x2404 1000UF 20V CAPACITOR	PDF
j130 fet Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification Text: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON	Original	0405SC-1000M 0405SC-1000M 1000Watts, j130 fet 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification	PDF
1000uf electrolytic capacitor Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet Text: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON	Original	0405SC-1000M 0405SC-1000M 1000Watts, 1000uf electrolytic capacitor capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet	PDF
electrolytic capacitor, .1uF Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION	Original	0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA electrolytic capacitor, .1uF electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor	PDF
Untitled Abstract: No abstract text available Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION	Original	0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA	PDF
8059-2G7 Abstract: s8059 dc 1692 in 3003 TRANSISTOR 8059 8059-2G4 transistor 115 To5 transistor 8059-2g9 8059-2G2 Text: 8059 Series Transistor & IC Low Profile Sockets 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium copper precision four fingered inner contact and brass outer sleeve. Insulators are molded in five brilliant polyamide colors, for rapid visual	Original	8059-2G7 8059-2G4 8059-2G5 8059-2G2 8059-4G4 8059-2G3 8059-2G6 8059-2G8 8059-2G9 8059-2G7 s8059 dc 1692 in 3003 TRANSISTOR 8059 8059-2G4 transistor 115 To5 transistor 8059-2g9 8059-2G2	PDF
in 3003 TRANSISTOR Abstract: Transistor equivalents 8059-2G7 8059-2g9 8059-2G10 8059-2G5 8059-2G2 TRANSISTOR CATALOGUE 2G7 datasheet 2G7 socket Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor & IC Low Profile Sockets 8059 Series 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium	Original	8059-2G7 8059-2G4 8059-2G5 8059-4G4 8059-2G3 8059-2G6 8059-2G8 8059-2G9 8059-2G10 in 3003 TRANSISTOR Transistor equivalents 8059-2G7 8059-2g9 8059-2G10 8059-2G5 8059-2G2 TRANSISTOR CATALOGUE 2G7 datasheet 2G7 socket	PDF
Untitled Abstract: No abstract text available Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)	OCR Scan	LDA100 LDA101 LDA110 LDA111 LDA200 LDA201 LDA210 LDA211	PDF
transistor SMD p05 Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110 Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)	OCR Scan	LDA100 LDA101 LDA110 LDA111 LDA200 LDA201 LDA210 LDA211 transistor SMD p05 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398	PDF

transistor 373 Abstract: 8060 transistor Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe	OCR Scan	8060-1G11 8060-1G6 MIL-S-83502/2 M1L-S-83502/5. transistor 373 8060 transistor	PDF
8060 transistor Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45 Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,	Original	8060-1G11 8060-1G6 MIL-S-83502/2 MIL-S-83502/5. 8060 transistor 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45	PDF
transistor 1kp Abstract: transistor 406 specification marking code 1kp 1Lp marking BCV61 TRANSISTOR 404 LC marking code transistor Text: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pairs. 2 collector TR1 APPLICATIONS	OCR Scan	BCV61 OT143B BCV62. BCV61 BCV61A BCV61B BCV61C transistor 1kp transistor 406 specification marking code 1kp 1Lp marking TRANSISTOR 404 LC marking code transistor	PDF
690 lc Abstract: BUW14 Text: Philips Semiconductors Product specification Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.	OCR Scan	BUW14 1002b 007761G 711002b 690 lc BUW14	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU27250F GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VC6S pulses up to 1700V.	OCR Scan	BU27250F BU2725DF	PDF
Untitled Abstract: No abstract text available Text: AMP Catalog 1307612 Specialty Sockets Revised 7-01 T ran s isto r & 1C Low Profile S o ckets 8059 Series 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium copper precision four fingered inner contact and brass outer sleeve.	OCR Scan	8059-2G7	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCËS pulses up to 1700V.	OCR Scan	BU2725AX 1E-06 1E-04 1E-02	PDF
transistor Kd 505 Abstract: k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 805S-IG32 1G22 1G5.1 8060-1G6 Text: TH IS DRAW ING IS A C O N TR O LLE D DO C U M EN T. REVISIONS T ^ st DATE - p 0 0 28N0V2006 ECO — 05 — Ö9 78 8058 & 8060 Series DWN APVD Kb i/ n d e s c r ip t io n L J Transisto r Sockets 8060-1G11 8060-1G6 FEATURES: — 1^ PERFORMANCE SPECIFICATIONS:	OCR Scan	28N0V2006 8060-1G11 8060-1G6 MIL-S-S3502/2 MIL-S-83502/5. transistor Kd 505 k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 805S-IG32 1G22 1G5.1 8060-1G6	PDF
BUK457-600B Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK457-600B T0220AB BUK457-600B	PDF
BUK457-600B Abstract: T0220AB Text: bTE T> • N AMER PHILIPS/DISCRETE bt.S3 T 31 0 03 0 7 1D DBS ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance	OCR Scan	S3T31 003071D BUK457-600B T0220AB	PDF

TRANSISTOR 406 SPECIFICATION Search Results

TRANSISTOR 406 SPECIFICATION Result Highlights (5)

TRANSISTOR 406 SPECIFICATION Datasheets Context Search

Untitled

J294

100 CJB

Untitled

SIT Static Induction Transistor

static induction transistor SIT

j130 fet

1000uf electrolytic capacitor

electrolytic capacitor, .1uF

Untitled

8059-2G7

in 3003 TRANSISTOR

Untitled

transistor SMD p05

transistor 373

8060 transistor

transistor 1kp

690 lc

Untitled

Untitled

Untitled

transistor Kd 505

BUK457-600B

BUK457-600B