BC857BS3Ft
Abstract: MBH727
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC857BS PNP general purpose double transistor Product specification Supersedes data of 1997 Jul 09 1999 Apr 26 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES
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MBD128
BC857BS
SCA63
115002/00/02/pp8
BC857BS3Ft
MBH727
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BC857BS PNP general purpose double transistor Product data sheet Supersedes data of 1997 Jul 09 1999 Apr 26 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES BC857BS PINNING
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MBD128
BC857BS
115002/00/02/pp7
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sot363 3ft
Abstract: SOT363 6 BC847BS 301 marking code PNP transistor BC847BS BC857BS BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BC857BS PNP general purpose double transistor Product specification Supersedes data of 1995 Dec 07 File under Discrete Semiconductors, SC04 1997 Jul 09 Philips Semiconductors Product specification PNP general purpose double transistor
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MBD128
BC857BS
SCA55
117047/00/01/pp8
sot363 3ft
SOT363 6 BC847BS
301 marking code PNP transistor
BC847BS
BC857BS
BP317
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sot363 3ft
Abstract: 3Ft SOT363 nxp marking code SOT363 BC847BS BC857BS
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC857BS PNP general purpose double transistor Product data sheet Supersedes data of 1997 Jul 09 1999 Apr 26 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES BC857BS
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MBD128
BC857BS
115002/00/02/pp7
sot363 3ft
3Ft SOT363
nxp marking code SOT363
BC847BS
BC857BS
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transistor 3bt
Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW
Text: Central BC856W SERIES BC857W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface
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BC856W
BC857W
OT-323
BC857W
200Hz
BC856AW
BC857AW
BC856BW
transistor 3bt
marking 3ft sot323
MARKING 3Ft SOT-23-6
marking 3ft
3BT MARKING
BC857BW
3Ft transistor
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Transistor BFT 10
Abstract: transistor 3Ft bux c 651 emetteur 3ft73
Text: BFT 72 3FT 73 BFT 74 NPN SILICON TRANSISTOR, PLANAR T R AN SISTO R N P N SILIC IU M , P L A N A R BFT 72, BFT 73 and B FT 74 are plastic encapsulated transistor designed for video output stages in black and white and color T V receivers. These transistors feature
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74sont
Transistor BFT 10
transistor 3Ft
bux c 651
emetteur
3ft73
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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fmw5
Abstract: No abstract text available
Text: 'S'/7s $ / T r a n s i s t o r s h 7 UMW5N FMW5 UMW 5N/FMW 5 Kh Dual Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor —jfö'hitt-§-JtlISffl/General Small Signal Amp. • IM • ^W ^äsEI/Dim ensions Unit: mm 1) * - / \ " - 5. - i - J U 21B<7>
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transistor 2sc5386
Abstract: 2sc5386
Text: TOSHIBA 2SC5386 TOSHIBA TRANSISTOR i <;r * 3ft & SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV .15.5 + 0.5 HIGH SPEED SWITCHING APPLICATIONS & O VCB0 = 1500V High Voltage Low Saturation Voltage VCE sat = 3V (Max.)
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2SC5386
transistor 2sc5386
2sc5386
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Untitled
Abstract: No abstract text available
Text: 2SJ105 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE i <; 1 1 n s Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS High Breakdown Voltage : VQ£ g = 50V T njroo oo = 1-n ^ A Ì M a v ì' f' V- un oci = 3ft
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2SJ105
2SK330
13RAIN
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DIP-20
Abstract: DIP20-P-300-2 TD62386 TD62386AF TD62386AP TD62387AF TD62387AP TD62388AF TD62388AP
Text: TOSHIBA TD62386,387,388AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62386AP, TD62386AF, TD62387AP TD62387AF, TD62388AP, TD62388AF 8 CH LOW INPUT ACTIVE DARLINGTON SINK DRIVER The TD62386AP, TD62386AF, TD62387AP, TD62387AF and TD62388AP, TD62388AF are non-inverting transistor
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TD62386
388AP/AF
TD62386AP,
TD62386AF,
TD62387AP
TD62387AF,
TD62388AP,
TD62388AF
DIP-20
DIP20-P-300-2
TD62386AF
TD62386AP
TD62387AF
TD62388AF
TD62388AP
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS • • • High Voltage Small Collector Output Capacitance High Transition Frequency VCEO=300V Cob = 5.0pF Typ. fT =100MHz (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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2SC5360
100MHz
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k2995
Abstract: 48mo
Text: TO SHIBA 2SK2995 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2S K2995 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS : R d s ( 0N) —48mO (Typ.)
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2SK2995
K2995
k2995
48mo
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2839 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2839 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4V Gate Drive
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2SK2839
--30V)
20kil)
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Untitled
Abstract: No abstract text available
Text: 2SJ103 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE i <; 11 n 3 Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS .5.1 M AX. • • • • High Breakdown Voltage : VQ£ g = 50V
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2SJ103
2SK246
SC-43
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2248 TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SD2248 H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS U nit in mm FOR INDUCTIVE LOAD DRIVE 5.1 MAX. High DC Current Gain : hFE = 2000 Min. (VCE = 2V, IC = 1A) Low Saturation Voltage
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2SD2248
O-92MOD
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transistor B324
Abstract: B324 transistor b324 B-324 diode ZENER EJJ 1DI200ZN-120 M115
Text: 1DI200ZN-120 200A y < r7 - h : Outline Drawings 5 POWER TRANSISTOR MODULE •Features • hFE^i^i' High DC Current Gain KF*3J& : Applications • >/LEK • • NC —9 General Purpose Inyerter Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools
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1DI200ZN-120
E82988
l95t/R89
Shl50
transistor B324
B324 transistor
b324
B-324
diode ZENER EJJ
M115
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FL4H
Abstract: LM2937 LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 T03B
Text: LM2937 National Semiconductor LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of sup plying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteris
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LM2937
LM2937
TL/H/11280-4
TL/H/11280-1
bS011B4
FL4H
LM2937ET-10
LM2937ET-12
LM2937ET-15
LM2937ET-5
LM2937ET-8
T03B
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45ACZ
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII 2S K2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 70S (Typ.)
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2SK2985
K2985
45ACZ
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Untitled
Abstract: No abstract text available
Text: International S Rectifier Provisional Data Sheet No. PD-9.1391 IRH9230 AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTOR p -c h a n n e l RAD HARD Product Summary -200 Volt, 0.8Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
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IRH9230
4SS5455
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LM2937
Abstract: LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 T03B LM253
Text: LM2937 National Semiconductor LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of sup plying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteris
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LM2937
TL/H/11280-4
LM2937
tl/h/11280-1
LM2937ET-10
LM2937ET-12
LM2937ET-15
LM2937ET-5
LM2937ET-8
T03B
LM253
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Untitled
Abstract: No abstract text available
Text: TO SH IB A TPC8003 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSH TPfftilfti LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS • Supplied in Compact and Thin Package Requires Only a Small M ounting Area.
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TPC8003
--13A,
--24V,
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sft 322 transistor
Abstract: b322 TRANSISTOR Transistor B322 B082 M106 B321 diode sg 5 ts
Text: 1DI2OOZ-12O 200a g ± / < 7 — : Outline Drawings y < r7 - b :7 > ' > ^ ^ n . - ) U POWER TRANSISTOR MODULE 13 Z1_29 Features • ftflft/E High Voltage y i) KrtJlS • ASO Excellent Safe Operating Area • •m m Including Free Wheeling Diode Insulated Type
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1DI2OOZ-12O
e82988
-B-082
sft 322 transistor
b322 TRANSISTOR
Transistor B322
B082
M106
B321
diode sg 5 ts
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YTFP450
Abstract: SC651
Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :
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YTFP450
VDS-10V,
00A/ps
YTFP450
SC651
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