Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 3E Search Results

    TRANSISTOR 3E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 3em

    Abstract: marking 3EM sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value


    Original     		OT-23 MMBTH10 100MHz transistor 3em marking 3EM sot-23 PDF

    transistor marking 3em

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value


    Original     		OT-23 MMBTH10 transistor marking 3em PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KST10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING:3E1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO


    Original     		OT-23 KST10 100MHz PDF

    TRANSISTOR SMD MARKING CODE 3f

    Abstract: transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E
    Text: SMD General Purpose Transistor PNP BC856/BC857/BC858 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208


    Original     		BC856/BC857/BC858 OT-23 OT-23, MIL-STD-202G, BC856A BC857A BC857B BC857C BC858A BC858B TRANSISTOR SMD MARKING CODE 3f transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E PDF

    transistor smd 3E

    Abstract: TRANSISTOR SMD 330 TRANSISTOR SMD MARKING CODE EM TRANSISTOR SMD MARKING CODE WT equivalent transistor smd 3 em 7 free transistor and ic equivalent data SMD Transistor 070 R smd transistor 3K transistor smd 3E npn transistor smd marking NA sot-23
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking Code = 3E VHF/UHF Transistor


    Original     		ISO/TS16949 CMBTH10 OT-23 C-120 CMBTH10Rev190402E transistor smd 3E TRANSISTOR SMD 330 TRANSISTOR SMD MARKING CODE EM TRANSISTOR SMD MARKING CODE WT equivalent transistor smd 3 em 7 free transistor and ic equivalent data SMD Transistor 070 R smd transistor 3K transistor smd 3E npn transistor smd marking NA sot-23 PDF

    free transistor and ic equivalent data

    Abstract: SMD CODE 3e transistor smd 3E TRANSISTOR SMD MARKING CODE oc smd transistor 3K marking 415 sot23 transistor smd marking NA sot-23 SMD CODE TRANSISTOR JA MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking Code = 3E VHF/UHF Transistor


    Original     		CMBTH10 OT-23 C-120 CMBTH10Rev190402E free transistor and ic equivalent data SMD CODE 3e transistor smd 3E TRANSISTOR SMD MARKING CODE oc smd transistor 3K marking 415 sot23 transistor smd marking NA sot-23 SMD CODE TRANSISTOR JA MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23 PDF

    ts 4141 TRANSISTOR smd

    Abstract: free transistor and ic equivalent data SMD TRANSISTOR MARKING ed CMBTH10 transistor SMD MARKING CODE MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23 SMD transistor code JA TRANSISTOR SMD MARKING CODE WT equivalent transistor smd 3 em 7
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking Code = 3E VHF/UHF Transistor


    Original     		CMBTH10 OT-23 C-120 CMBTH10Rev190402E ts 4141 TRANSISTOR smd free transistor and ic equivalent data SMD TRANSISTOR MARKING ed CMBTH10 transistor SMD MARKING CODE MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23 SMD transistor code JA TRANSISTOR SMD MARKING CODE WT equivalent transistor smd 3 em 7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PI N CONFIGURATI ON N PN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code = 3E VHF/UHF Transistor


    Original     		CMBTH10 OT-23 C-120 CMBTH10Rev190402E PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 3 1 MARKING 2 3E SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		MMBTH10 MMBTH10 OT-23 1000pF 8-10pF 100pF 0-18pF PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 3 1 MARKING 2 3E SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		MMBTH10 MMBTH10 OT-23 QW-R206-003 PDF

    2SC5600

    Abstract: nec k 813
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA871TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PA871TC S21e2 2SC5600) 2SC5600 PA871TC-T1 2SC5600 nec k 813 PDF

    BUK78150-55

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    Original     		OT223 BUK78150-55 BUK78150-55 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0030500 3E4 • APX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		bbS3T31 K438-800A/B BUK438 -800A -800B BUK438-800A/B PDF

    Untitled

    Abstract: No abstract text available
    Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y-3E CSA1162GR G -3F PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.14 0.09 0.48 0.38 3 2.6 2.4 _1.02


    OCR Scan     		CSA1162 CSA1162Y-3E CSA1162GR PDF

    Untitled

    Abstract: No abstract text available
    Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE O U TLIN E DETAILS ALL DIM EN SION S IN nun Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2.8 0.14 Û.09 0.48 o 3b Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02


    OCR Scan     		CSA1162 CSA1162Y-3E CSA1162GR PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H IL IP S /D IS C R E T E fc>3E D • LLS3331 0030flflS 311 H A P X Product Specification Philips Sem iconductors BUK657-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		LLS3331 0030flflS BUK657-400B O220AB bbS3T31 PDF

    blw95

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a


    OCR Scan     		bbS3T31 0DS1S14 blw95 PDF

    BLW95

    Abstract: SOT-121A IEC134 sot121a
    Text: N AMER PHILIPS/DISCRETE bTE » • bbS3T31 DOS'iSGb QbT ■ APX BLWyü H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB operated high power industrial and m ilita ry transm itting equipment in the h.f. band. The transistor presents excellent performance as a


    OCR Scan     		bbS3T31 20-his BLW95 7z77903 BLW95 SOT-121A IEC134 sot121a PDF

    eRVDS

    Abstract: 2SK797 OS1012
    Text: "t û DÊJb427S2S 6427525 N E C 0Dlflci4S ELECTRONICS fl 98D INC 18942 D T 3e N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D E S C R IP TIO N The 2SK797 Is N-Channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.


    OCR Scan     		Jb457S5S 2SK797 eRVDS OS1012 PDF

    CI Z 131 R-10

    Abstract: BLW87 h a 431 transistor transistor L6
    Text: N AMER PHILIPS/DISCRETE tlE » • bbS3T31 0051474 72T H A P X BL-VVO A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		bbS3T31 OT-123. 7Z67567 CI Z 131 R-10 BLW87 h a 431 transistor transistor L6 PDF

    transistor L6

    Abstract: BLY92C BLY92 PL 431 transistor
    Text: N AUER PHILIPS/DISCRETE b'lE D • btSB'îBl 002*1732 T13 ■ APX JL BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		BLY92C OT-120. 7z68949 transistor L6 BLY92C BLY92 PL 431 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 23033*34 Ü DO Ga b? 234 • CSA1162 CDÎL LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2 . 8~ 0.48 0.38 3 Pin configuration 1 = BASE


    OCR Scan     		CSA1162 CSA1162Y-3E CSA1162GR PDF

    CSA1162

    Abstract: No abstract text available
    Text: 23633*14 DOOOab? 23M LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G —3F _3.0_ 3 Pin configuration 1 = BASE 2 = EM ITTER 3 = C O L LE C T O R 0.48


    OCR Scan     		CSA1162 csa1162y-3e csa1162gr CSA1162 PDF