diode marking SJ
Abstract: JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R070C6
diode marking SJ
JESD22
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65C6070
Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R070C6
726-IPW65R070C6
65C6070
infineon MOSFET parameter test
diode marking SJ
65C6
ipw65r
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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transistor 8772
Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
transistor 8772
8772 transistor
470PF
CGH35030-TB
JESD22
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transistor 8772
Abstract: Transistor C 4927 8772 transistor CGH35030F
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
transistor 8772
Transistor C 4927
8772 transistor
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RO4350B
Abstract: CGH35030F CGH35030-TB 10UF 470PF
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
RO4350B
CGH35030-TB
10UF
470PF
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Untitled
Abstract: No abstract text available
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
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CGH3503
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A 12-15 GHz High Gain Amplifier
Abstract: HEADER RT
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
A 12-15 GHz High Gain Amplifier
HEADER RT
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
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STR 5709
Abstract: No abstract text available
Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH3503
STR 5709
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str 6754
Abstract: ts 1640-1 str 6754 circuit STR W 6754 6819 cree rf 10UF 470PF CGH35030F CGH35030-TB
Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
str 6754
ts 1640-1
str 6754 circuit
STR W 6754
6819
cree rf
10UF
470PF
CGH35030-TB
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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SC15
Abstract: LTE42008R Data Handbook sc15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor
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OT440A
SCA53
127147/00/02/pp12
SC15
LTE42008R
Data Handbook sc15
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CDE, NP80N03DDE, NP80N03EDE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP80N03CDE,
NP80N03DDE,
NP80N03EDE
NP80N03CDE
NP80N03DDE
NP80N03EDE
O-220AB
O-262
O-263
O-220AB)
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D1531
Abstract: NP80N03CDE MP-25 NP80N03DDE NP80N03EDE NP80N03KDE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CDE,NP80N03DDE,NP80N03EDE,NP80N03KDE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.
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NP80N03CDE
NP80N03DDE
NP80N03EDE
NP80N03KDE
NP80N03CDE
O-262
NP80N03EDE
O-220AB
NP80N03DDE
O-263
D1531
MP-25
NP80N03KDE
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D1403
Abstract: NP80N03CLE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CLE, NP80N03DLE, NP80N03ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP80N03CLE,
NP80N03DLE,
NP80N03ELE
NP80N03CLE
NP80N03DLE
NP80N03ELE
O-220AB
O-262
O-263
O-220AB)
D1403
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D1403
Abstract: MP-25 NP80N03CLE NP80N03DLE NP80N03ELE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CLE, NP80N03DLE, NP80N03ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP80N03CLE,
NP80N03DLE,
NP80N03ELE
NP80N03CLE
O-262
O-220AB
NP80N03DLE
O-263
O-220AB)
D1403
MP-25
NP80N03CLE
NP80N03DLE
NP80N03ELE
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D1403
Abstract: MP-25 NP80N03CLE NP80N03DLE NP80N03ELE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CLE, NP80N03DLE, NP80N03ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP80N03CLE,
NP80N03DLE,
NP80N03ELE
O-262
MP-25
O-220AB
MP-25)
NP80N03DLE
NP80N03CLE
D1403
NP80N03CLE
NP80N03DLE
NP80N03ELE
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100 Rev.1.00 Nov 07, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance
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R07DS0562EJ0100
NP89N04PUK
AEC-Q101
NP89N04PUK-E1-AY
NP89N04PUK-E2-AY
O-263
MP-25ZP)
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: FF 600 R 16 KF 1 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1600 V 600 A 1200 A 3900 W V qe 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte
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34D3ET7
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Untitled
Abstract: No abstract text available
Text: FF 600 R 16 KF 1 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1600 V 600 A 1200 A 3900 W V qe 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte
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34D3ET7
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transistor K52
Abstract: germanium transistor pnp GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium pnp germanium transistor mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS power ac audio transistor small signal transistor
Text: EDISW A N MAZDA X C IO I AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE GEN ERAL The X C IO I is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can.
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