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    TRANSISTOR 3213 Search Results

    TRANSISTOR 3213 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3213 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    321L

    Abstract: UNR3210 UNR321N UNR3213 UNR3216 UNR321L
    Text: Transistors with built-in Resistor UNR3210/3213/3216/321L/321N Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • Optimum for downsizing of the equipment and high-density mounting


    Original     		UNR3210/3213/3216/321L/321N UNR3210 UNR3213 UNR3216 UNR321L 321L UNR3210 UNR321N UNR3213 UNR3216 PDF

    a1270* transistor

    Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
    Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2


    Original     		R123-R181, 5091-6489E 5968-1410E a1270* transistor computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR3210/3213/3216/321L/321N Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • Optimum for downsizing of the equipment and high-density mounting


    Original     		UNR3210/3213/3216/321L/321N UNR3210 UNR3213 UNR3216 UNR321L UNR321N PDF

    a1270* transistor

    Abstract: 1689c hp plotter
    Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2


    Original     		5091-6489E 5968-1410E a1270* transistor 1689c hp plotter PDF

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


    Original     		PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A PDF

    transistor 3213

    Abstract: 321L PT-100 resistance charts 321N marking r2 Panasonic Main Unit VB -5150 pt-100 datasheet PT-100 temperature charts UNR3210 UNR3213
    Text: Transistors with built-in Resistor UNR3210/3213/3216/321L/321N Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.15 min. • Optimum for downsizing of the equipment and high-density mounting


    Original     		UNR3210/3213/3216/321L/321N UNR3210 UNR3213 UNR3216 UNR321L UNR321N transistor 3213 321L PT-100 resistance charts 321N marking r2 Panasonic Main Unit VB -5150 pt-100 datasheet PT-100 temperature charts UNR3210 UNR3213 PDF

    UNR3210

    Abstract: UNR3213 UNR3216 UNR321L UNR321N
    Text: Transistors with built-in Resistor UNR3210/3213/3216/321L/321N Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 0.15 min. 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original     		UNR3210/3213/3216/321L/321N UNR3210 UNR3213 UNR3216 UNR321L UNR321N PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 PDF

    transistor B 1184

    Abstract: BFW30 philips BFW30
    Text: bbsaqai □□3213b 730 Philips Sem iconductors • ADY Product specification NPN 2 GHz wideband transistor — ^ i BFW30 N bTE T> AMER PHILIPS/DISCRETE PINNING DESCRIPTION NPN transistor in a T O -7 2 metal envelope, with insulated electrodes and a shield lead connected to the


    OCR Scan     		3213b BFW30 aTO-72 transistor B 1184 BFW30 philips BFW30 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


    OCR Scan     		NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1 PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    Motorola transistor 388 TO-204AA

    Abstract: motorola mosfet BD357 Bd 357
    Text: nOTOROLA SC XSTRS/R F bftE J> b3t.72SH 00^0^03 7G1 •110Tb m MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM25IM10 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate TM O S POWER FET 25 AMPERES R 0S (0n) = 0 075 O H M


    OCR Scan     		110Tb MTM25IM10 O-204AA) 97A-01 97A-03 97A-03 O-204AE) Motorola transistor 388 TO-204AA motorola mosfet BD357 Bd 357 PDF

    PU421

    Abstract: 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic
    Text: Power Transistor Arrays P U 3213, P U 4213, P U 4513 PU3213, PU4213, PU4513 P a c k a g e D im e n s io n s PU3213 P o w e r A m p lifier, S w itch in g C o m p le m e n ta ry P a ir with P U 3 1 1 3 , P U 4 1 1 3 , P U 4 4 1 3 • F e a tu re s • • •


    OCR Scan     		PU3213, PU4213, PU4513 PU3113, PU4113, PU4413 PU3213: PU421 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic PDF

    PU1501

    Abstract: transistor d 4515 EQUIVALENT equivalent transistor n 4212 d 1275 transistor k 4212 fet 4435 equivalent 4435 fet 4435 transistor U3146 PU3131
    Text: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays S eries N am e P U 3 0 0 0 Series PUA3000 Series P U 4 0 0 0 Series Equivalent Circuit Package (No.) 8 Pin • SIL Package (D68)(D69) Equivalent Circuit ^ '\J 3 tr u c tu r e


    OCR Scan     		PU3110 PU3111 PU3112 PU3211 PU3214 PU3116 PU4116 PU4110 PU4111 U4112 PU1501 transistor d 4515 EQUIVALENT equivalent transistor n 4212 d 1275 transistor k 4212 fet 4435 equivalent 4435 fet 4435 transistor U3146 PU3131 PDF

    fzt657

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR FZT657 IS S U E 3 - F E B R U A R Y 1995 FEATURES * Low saturation voltage C O M P L E M E N T A R Y TY PE - FZT757 P A R T M A R K IN G D ETA IL - FZT657 B ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage


    OCR Scan     		OT223 FZT757 FZT657 20MHz mbg25 fzt657 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3- FEBRUARY 1995_ FEAT U R ES * L o w sa tu ra tio n v o lta g e C O M P L E M E N T A R Y T Y P E - FZT757 P A R T M A R K IN G D ET A IL - FZT657 ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R


    OCR Scan     		OT223 FZT757 FZT657 100mA, 20MHz PDF

    SN75303

    Abstract: c41 transistor array lc 5012 m transistor c32 C41-C41 transistor c42
    Text: SYSTEM S IN T E R F A C E C IR C U IT CIRCUIT T Y P E SN75303 2 X 4 TRANSISTOR A R R AY 150-m A M E M O R Y D R IV E R S F L A T PACKAG E TOP V IE W Maximum VcE(sat) of 750 mV at 150 m A le H • Maximum V ß E of 1.1 V at 150 m A le • Minimum hFE of 15


    OCR Scan     		SN75303 150-mA SN75303_ SN75303 c41 transistor array lc 5012 m transistor c32 C41-C41 transistor c42 PDF

    relay HM 810

    Abstract: U6050BAFL u6050b-AFL U6050B U6052BAFL U6052B-AFL diode BYW 64 hm 810 relay D-75031 DIODE S4 74
    Text: Temic LO CAL U 6 0 5 0 B • U 6051 B U 6052B E le k t r o n lk - S e r v ic e m u l t ip l e x s y s t e m BodelschwinghStr. 32 D-75031 Eppingen Tel.'. 07262/91236-0 Fax: 07262/3213 T e ch n o lo g y: B ip ola r A p p lic a tio n : Transm itter U 6 0 5 0 B and receiver i.U 6051 B, U 6 0 5 2 B) for permanent scanning of 8 sw itch -p osition s,


    OCR Scan     		D-75031 U6050B) 19i-i relay HM 810 U6050BAFL u6050b-AFL U6050B U6052BAFL U6052B-AFL diode BYW 64 hm 810 relay DIODE S4 74 PDF

    bipolar power transistor

    Abstract: BDW42 BDW47 motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW 47* • • High DC Current Gain - hpE = 2500 typ. @ lc = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc:


    OCR Scan     		BDW46 BDW42/BDW47 O-220AB BDW46 BDW42 BDW47 bipolar power transistor motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40 PDF

    TRANSISTOR bd 147

    Abstract: bdw 36 w41b BDW 38 npn darlington transistor 200 watts
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47* • • High DC Current Gain - hFE = 2500 typ. @ lc = 5.0 Adc.


    OCR Scan     		BDW46 BDW42/BDW47 O-220AB BDW47 BDW45, TRANSISTOR bd 147 bdw 36 w41b BDW 38 npn darlington transistor 200 watts PDF

    BDW420

    Abstract: BDW42-D
    Text: MOTOROLA Order this document by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW 42* Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. • • • • • BDW 47* High DC Current Gain - hpE = 2500 typ. @ Iq = 5.0 Adc.


    OCR Scan     		BDW42/D BDW46 42/BDW -220A BDW420 BDW42-D PDF

    SS TRANSISTOR

    Abstract: No abstract text available
    Text: M M O T O R O L A — — M C78T00 Series Three-Am pere Positive Voltage Regulators This fam ily of fixed voltage regulators are monolithic integrated circuits capable of driving loads in excess of 3.0 A. These three-term inal regulators em ploy inte rnal current lim iting, therm al shutdow n, and s a fe -a re a


    OCR Scan     		2N4398 SS TRANSISTOR PDF