TRANSISTOR 306 X Search Results

Contextual Info: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: grandhalo@hutchcity.com b PHOTO TRANSISTOR 光 電 晶 體 Rev: A Date: 2002/10/19 GH-306 Series Electro-Optical Characteristics: Code for parts Material GH-XXXXX Rise Time Fall Time BVceo Min V TN2469TK-06E

SSM3J317

Abstract: SSM3J317T
Contextual Info: SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 mΩ max (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V)

Contextual Info: SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 mΩ max (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V)

SSM6J205FE

Contextual Info: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)

SSM6J205FE

Abstract: M3002
Contextual Info: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • 1.8V drive • P-ch 2-in-1 • Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)

SSM6J205FE

Contextual Info: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)

SSM6J205FE

Contextual Info: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)

Contextual Info: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • 1.8V drive • P-ch 2-in-1 • Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)

ALR060

Abstract: ASI10513 1402 Transistor
Contextual Info: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz

j48 transistor

Abstract: TRANSISTOR j4 ASI10545 AJT015
Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm

Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm

ALR060

Abstract: ASI10513 transistor 306 x
Contextual Info: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI ALR060 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS

ASI10532

Abstract: ASI223-12
Contextual Info: ASI223-12 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI 2223-12 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS

ALR060

Abstract: ASI10513
Contextual Info: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz

ASI10533

Abstract: ASI2223-20
Contextual Info: ASI2223-20 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI 2223-20 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS

ALR006

Abstract: ASI10510
Contextual Info: ALR006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI ALR006 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS

ALR030

Abstract: ASI10512
Contextual Info: ALR030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI ALR030 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R 2.75 A 32 V VCC PDISS

AJT006

Abstract: ASI10544
Contextual Info: AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG A 4x .062 x 45° DESCRIPTION: .040 x 45° C 2xB ØE D The ASI AJT006 is Designed for F G H I FEATURES: M R • Input Matching Network • • Omnigold Metalization System N MAXIMUM RATINGS

AJT015

Abstract: ASI10545
Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG A 4x .062 x 45° DESCRIPTION: .040 x 45° C 2xB The ASI AJT015 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS

ALR015

Abstract: ASI10511
Contextual Info: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI ALR015 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold Metalization System M R N MAXIMUM RATINGS

ALR030

Abstract: 1402 Transistor ASI10512
Contextual Info: ALR030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR030 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 7.0 dB at 30 W/ 1400 MHz

Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is Designed for 960 – 1215 MHz, JTIDS Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 8.1 dB at 15 W/ 1215 MHz

AM81214-060

Abstract: transistor a 726
Contextual Info: AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network

ALR015

Abstract: ASI10511
Contextual Info: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR015 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 8.5 dB at 15 W/1400 MHz