MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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Vbe 40 transistor
Abstract: SQD300BA60 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns
Text: TRANSISTOR MODULE Hi- SQD300BA60 UL;E76102 M SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated
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SQD300BA60
E76102
SQD300BA60
200ns)
400mA
Vbe 40 transistor
600v 10A ultra fast recovery diode
diode module 6A
darlington power transistor 10a
fast recovery diode 1a trr 200ns
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darlington 8A 300V
Abstract: 300V switching transistor SQD400BA60 M6 transistor
Text: TRANSISTOR MODULE Hi- SQD400BA60 UL;E76102 M SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated
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SQD400BA60
E76102
SQD400BA60
200ns)
530mA
darlington 8A 300V
300V switching transistor
M6 transistor
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Darlington 40A
Abstract: SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor SQD200A40 380 darlington
Text: TRANSISTOR MODULE SQD200A40/60 UL;E76102 M SQD200A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQD200A40/60
E76102
SQD200A
400/600V
SQD200A40
SQD200A60
SQD200A40
Darlington 40A
SQD200A60
300V switching transistor
Application sqd200a60
darlington 8A 300V
darlington power transistor
diode 300v 200A
sit transistor
380 darlington
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SQD300A60
Abstract: A1380 300V switching transistor SQD300A40 M6 transistor
Text: TRANSISTOR MODULE SQD300A40/60 UL;E76102 M SQD300A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQD300A40/60
E76102
SQD300A
400/600V
SQD300A40
SQD300A60
SQD300A40
SQD300A60
A1380
300V switching transistor
M6 transistor
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MPSA92M
Abstract: pnp transistor 300v
Text: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92
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MPSA92M
-300V
625mW
QW-R201-020
MPSA92M
pnp transistor 300v
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MPSA92M
Abstract: No abstract text available
Text: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92
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MPSA92M
-300V
625mW
QW-R201-020
MPSA92M
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Untitled
Abstract: No abstract text available
Text: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92
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MPSA92M
-300V
625mW
CHSA92M
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300V switching transistor
Abstract: Vbe 40 transistor QCA300BA60
Text: TRANSISTOR MODULE Hi- QCA300BA60 UL;E76102 M QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is
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QCA300BA60
E76102
QCA300BA60
200ns)
400mA
300V switching transistor
Vbe 40 transistor
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QCA300BA60
Abstract: 675g M6 transistor
Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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QCA300BA60
E76102
QCA300BA60
trr200ns)
113max
IC300A,
VCEX600V
hFE750
Ic300A
675g
M6 transistor
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QCA300BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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QCA300BA60
E76102
QCA300BA60
trr200ns)
113max
IC300A,
VCEX600V
hFE750
Ic300A
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Untitled
Abstract: No abstract text available
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
100ms*
500ms*
QW-R211-015
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Untitled
Abstract: No abstract text available
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
QW-R211-015
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2SC2482
Abstract: common collector amplifier applications ce20v vc20e
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
QW-R211-015
2SC2482
common collector amplifier applications
ce20v
vc20e
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MMBTA42
Abstract: MMBTA42-AE3-R MMBTA42L MMBTA42L-AE3-R switch NPN SOT
Text: UNISONIC TECHNOLOGIES CO.,LTD. MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 1 FEATURES 2 *Collector-Emitter voltage: VCEO=300V
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MMBTA42
MMBTA42
350mW
OT-23
MMBTA42L
MMBTA42-AE3-R
MMBTA42L-AE3-R
QW-R206-004
MMBTA42L
MMBTA42L-AE3-R
switch NPN SOT
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SOT-23 1D
Abstract: No abstract text available
Text: UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 2 FEATURES 1 *Collector-Emitter voltage: VCEO=300V *High current gain *Collector Dissipation:
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MMBTA42
MMBTA42
350mW
OT-23
QW-R206-004
SOT-23 1D
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Untitled
Abstract: No abstract text available
Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V
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MMBTA92
MMBTA92
-300V
350mW
OT-23
-30sing
QW-R206-005
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Untitled
Abstract: No abstract text available
Text: KSP42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=KSP42: 300V KSP43: 200V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector Base Voltage : KST42
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KSP42/43
KSP42:
KSP43:
625mW
KST42
KST43
KST43
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Untitled
Abstract: No abstract text available
Text: UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 2 1 FEATURES *Collector-Emitter voltage: VCEO=300V *High current gain *Collector Dissipation:
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MMBTA42
MMBTA42
350mW
OT-23
QW-R206-004
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated
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SQQ300BA60
200ns)
hrEfe750
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQP200A40/60
E76102
400/600V
CI022aS
SQD200A
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603 transistor npn
Abstract: TRANSISTOR 434 KSP43 KSP42 603 npn
Text: KSP42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emittor Voltage: VCeo = KSP42: 300V KSP43: 200V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Rating
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KSP42/43
KSP42:
KSP43:
625mW
KSP42
KSP43
100MA,
603 transistor npn
TRANSISTOR 434
KSP43
KSP42
603 npn
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MPSA42
Abstract: No abstract text available
Text: MPSA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: V ceo-300V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage
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MPSA42
ceo-300V
625mW
100MHz
300ys,
MPSA42
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