TRANSISTOR 2Y Search Results

TRANSISTOR 2Y Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 2Y Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SE012 Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611 Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)	Original	2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611	PDF
Varistor RU Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586 Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)	Original	2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586	PDF
2SC5586 Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)	Original	2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F	PDF
TRANSISTOR SMD 2y Abstract: smd transistor 2y smd transistor marking 2y 2Y smd smd marking 2y CMBT3905 Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE	Original	ISO/TS16949 OT-23 CMBT3905 C-120 TRANSISTOR SMD 2y smd transistor 2y smd transistor marking 2y 2Y smd smd marking 2y CMBT3905	PDF
Contextual Info: CMBT3905 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)	OCR Scan	CMBT3905	PDF
smd transistor marking 2y Abstract: TRANSISTOR SMD 2y smd transistor 2y 2Y smd CMBT3905 Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration	Original	OT-23 CMBT3905 C-120 smd transistor marking 2y TRANSISTOR SMD 2y smd transistor 2y 2Y smd CMBT3905	PDF
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y	Original	OT-23 CMBT3905 C-120	PDF
diode RU 3AM Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)	Original		PDF
Contextual Info: L CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter	OCR Scan	CMBT3905 23fl33T4 D000fi20 23A33T4	PDF
Contextual Info: CI CMBT3905 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.4 2.6 2.4 1.2 R0.1 -004 ' _L02 0.60 0.40 0.70	OCR Scan	CMBT3905	PDF
2SC5436 Abstract: 2SC5786 4550 nec IC 7432 data Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor	Original	PA861TC 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 2SC5436 2SC5786 4550 nec IC 7432 data	PDF
CMBT3905 Contextual Info: CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.48 038 0.14 0.09 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2 .4 _L02 ' € 0.60 0.40	OCR Scan	CMBT3905 100nA; CMBT3905	PDF
Contextual Info: MPSA44 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. " " TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package: TO-92 * Complement To MPSA94 * High Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc=625mA Ta=25<>C	OCR Scan	MPSA44 MPSA94 625mA 300uS, 100uA 100mA	PDF
transistor BC 247 Abstract: BC 247 b transistor Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445	OCR Scan	NTE74426 14-Lead NTE74LS445 16-Lead NTE74S474, 24-Lead NTE74S475 4096-Bit NTE74HC574, 20-Lead transistor BC 247 BC 247 b transistor	PDF

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	PHP33N10 T0220AB	PDF
tme 126 Abstract: MGW12N120 IC9012 Bipolar WPC Contextual Info: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.	Original	MGW12N120 O-247 10USminimum tme 126 MGW12N120 IC9012 Bipolar WPC	PDF
NTE74HC14 Abstract: NTE74HCt14 NTE74C14 NTE7420 NTE7421 NTE74HC11 NTE7413 NTE7410 NTE7416 NTE74C20 Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7410, NTE74C10, 14-Lead DIP, See Diag. 247 NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 Triple 3-Input Positive NAND Gate u r i NTE7411, MTE74H11, 14-Lead DIP, See Diag. 247 NTE74HC11, NTE74LS11, NTE74S11	OCR Scan	NTE7410, NTE74C10, 14-Lead NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 NTE7411, MTE74H11, NTE74HC14 NTE74HCt14 NTE74C14 NTE7420 NTE7421 NTE74HC11 NTE7413 NTE7410 NTE7416 NTE74C20	PDF
NTE7404 Abstract: NTE74HC04 transistor 6y NTE7406 NTE74LS05 NTE7400 NTE7408 NTE7409 NTE74LS04 NTE74LS00 Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7214 16-Lead DIP, See Diag. 249 TRI-STATE Dual 4:1 Multiplexer NTE740Q, NTE74C00, 14-Lead DIP, See Diag. 247 NTE74H00, NTE74HC00, NTE74HCT00, NTE74LS00, NTE74S00 14-Lead DIP, See Diag. 247 NTE7401,	OCR Scan	NTE7214 16-Lead NTE74H01 14-Lead NTE7404, NTE74C04, NTE74H04, NTE74HC04, NTE74HCT04, NTE7404 NTE74HC04 transistor 6y NTE7406 NTE74LS05 NTE7400 NTE7408 NTE7409 NTE74LS04 NTE74LS00	PDF
NTE7493A Abstract: NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74HC86 NTE74C90 Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator NTE74S6, NTE74HC86,14-Lead DIP, See Diag. 247 NTE74LS86, NTE74S86	OCR Scan	NTE7485, 16-Lead NTE74LS85, NTE74S85 NTE74C85 NTE74S6, NTE74HC86 14-Lead NTE74LS86, NTE7493A NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74C90	PDF
CBC 557 C Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor Contextual Info: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB	OCR Scan		PDF
NTE74LS244 Abstract: NTE74LS248 NTE74LS247 NTE74C221 NTE74HC244 NTE74LS245 NTE74LS240 NTE74HC259 NTE74HCT244 NTE74LS221 Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register NTE74221, 16-Lead DIP, See Diag. 249 NTE74C221, NTE74LS221 Dual Monostable Multivibrator Q V cc ^ Shift/Load 3 QH ^ Input G	OCR Scan	NTE74199 24-Lead NTE74221, 16-Lead NTE74C221, NTE74LS221 NTE74C240, 20-Lead NTE74HC240, NTE74HCT240, NTE74LS244 NTE74LS248 NTE74LS247 NTE74C221 NTE74HC244 NTE74LS245 NTE74LS240 NTE74HC259 NTE74HCT244 NTE74LS221	PDF
NTE74LS21 Abstract: NC3A Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7410, NTE74C10, 14-Lead DIP, See Diag. 247 NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 Triple 3-Input Positive NAND Gate NTE7411, NTE74H11, 14-Lead DIP, See Diag. 247 NTE74HC11, NTE74LS11, NTE74S11 Triple 3-Input Positive AND Gate	OCR Scan	NTE7410, NTE74C10, 14-Lead NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 NTE7411, NTE74H11, NTE74LS21 NC3A	PDF
ADI1797 Abstract: sot 223 Contextual Info: . Order this data sheet by MMH107T1/D MOTOROLA SEMICONDUCTOR ● TECHNICAL DATA a Advance Information Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount m This TMOS medium Dower field effect transistor is desianed for	Original	MMH107T1/D OT-223 MK145BP. 4-32-l, ADI1797 sot 223	PDF
nte74s571 Abstract: NTE74HC573 NTE74HC574 NTE74HCT573 NTE74S474 NTE74S573 512x8 PROM NTE74LS541 NTE74S472 NTE74LS490 Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling NTE74LS445 16-Lead DIP, See Diag. 249 BCD-to-Decimal Decoder/Driver w/Open Collector Outputs NTE74S472 20-Lead DIP, See Diag. 294	OCR Scan	NTE74426 14-Lead NTE74S474, NTE74S475 4096-Bit 512x8) NTE74S474: NTE74S475: NTE74LS445 16-Lead nte74s571 NTE74HC573 NTE74HC574 NTE74HCT573 NTE74S474 NTE74S573 512x8 PROM NTE74LS541 NTE74S472 NTE74LS490	PDF

TRANSISTOR 2Y Search Results

TRANSISTOR 2Y Result Highlights (5)

TRANSISTOR 2Y Datasheets Context Search

SE012

Varistor RU

2SC5586

TRANSISTOR SMD 2y

smd transistor marking 2y

diode RU 3AM

2SC5436

CMBT3905

transistor BC 247

tme 126

NTE74HC14

NTE7404

NTE7493A

CBC 557 C

NTE74LS244

NTE74LS21

ADI1797

nte74s571