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    TRANSISTOR 2XW Search Results

    TRANSISTOR 2XW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LP395Z/LFT1
    Texas Instruments Ultra Reliable Power Transistor 3-TO-92 Visit Texas Instruments Buy
    LM395T/NOPB
    Texas Instruments Ultra Reliable Power Transistor 3-TO-220 0 to 125 Visit Texas Instruments Buy
    ULN2003ANS
    Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-SO Visit Texas Instruments Buy
    ULQ2003ADRG4
    Texas Instruments Darlington Transistor Arrays 16-SOIC Visit Texas Instruments
    LP395Z/NOPB
    Texas Instruments Ultra Reliable Power Transistor 3-TO-92 -40 to 125 Visit Texas Instruments Buy

    TRANSISTOR 2XW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


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    BLP15M7160P PDF

    Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


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    BLP15M7160P PDF

    Contextual Info: BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.


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    BLF644P PDF

    Contextual Info: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


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    BLF647PS PDF

    Contextual Info: BLF644P Broadband power LDMOS transistor Rev. 1 — 11 June 2013 Objective data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent


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    BLF644P PDF

    Contextual Info: BLF8G27LS-100V Power LDMOS transistor Rev. 1 — 17 August 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


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    BLF8G27LS-100V PDF

    BLC8G27LS-160AV

    Abstract: BLC8G27LS sot1275
    Contextual Info: BLC8G27LS-160AV Power LDMOS transistor Rev. 1 — 23 May 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


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    BLC8G27LS-160AV BLC8G27LS-160AV BLC8G27LS sot1275 PDF

    TRANSISTOR CW 7805

    Contextual Info: BLF8G10LS-300P Power LDMOS transistor Rev. 2 — 17 December 2013 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


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    BLF8G10LS-300P TRANSISTOR CW 7805 PDF

    Contextual Info: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.


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    BLC8G27LS-100AV PDF

    Contextual Info: BLP7G07S-140P Power LDMOS transistor Rev. 2 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


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    BLP7G07S-140P PDF

    Contextual Info: BLF8G27LS-100V Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


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    BLF8G27LS-100V PDF

    Contextual Info: BLF8G38LS-75V Power LDMOS transistor Rev. 2 — 9 January 2014 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.


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    BLF8G38LS-75V PDF

    Contextual Info: BLC8G27LS-180AV Power LDMOS transistor Rev. 1 — 1 July 2014 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


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    BLC8G27LS-180AV PDF

    Contextual Info: BLF8G20LS-230V Power LDMOS transistor Rev. 1 — 7 November 2013 Preliminary data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


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    BLF8G20LS-230V PDF

    Contextual Info: BLF8G20LS-200V Power LDMOS transistor Rev. 4 — 21 October 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


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    BLF8G20LS-200V PDF

    Contextual Info: BLF8G38LS-75V Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.


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    BLF8G38LS-75V PDF

    Contextual Info: BLC8G27LS-240AV Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.


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    BLC8G27LS-240AV PDF

    Contextual Info: BLF8G27LS-100V Power LDMOS transistor Rev. 3 — 29 January 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


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    BLF8G27LS-100V PDF

    Contextual Info: BLP10H610 Broadband LDMOS driver transistor Rev. 1 — 20 January 2014 Objective data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.


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    BLP10H610 2002/95/EC, PDF

    Contextual Info: BLF8G20LS-230V Power LDMOS transistor Rev. 2 — 21 February 2014 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


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    BLF8G20LS-230V PDF

    Contextual Info: BLF8G20LS-160V Power LDMOS transistor Rev. 1 — 5 March 2014 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


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    BLF8G20LS-160V PDF

    Contextual Info: BLF8G10LS-160V Power LDMOS transistor Rev. 2 — 24 October 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.


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    BLF8G10LS-160V PDF

    Contextual Info: BLP10H610 Broadband LDMOS driver transistor Rev. 3 — 25 September 2014 Product data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.


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    BLP10H610 PDF

    Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.


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    BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW PDF