TRANSISTOR 2X4 Search Results

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Contextual Info: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

smd transistor ne c2

Abstract: smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30
Contextual Info: DISCRETE SEMICONDUCTORS E>^m S ln lE E T BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 Philips Sem iconductors 2000 Feb 17 PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor

Contextual Info: FMMT413 SOT23 NPN silicon planar avalanche transistor Summary V BR CES = 150V, V(BR)CEO = 50V, IUSB = 25A Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal

LD08

Abstract: LD0810-50
Contextual Info: L D 0 8 1 0 -5 0 M/A-OOM Preliminary Specifications LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26V y M â C G tt & Microwave Products Outline Drawing 1, 2 .800 [20.32]I«—.562 [14.27]—► 2X .215 [5.461- r .235 [5.97] 2X4>.130 [3.30] Absolute Maximum Rating1

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Contextual Info: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design

edge emitter LED

Abstract: AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413
Contextual Info: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators

AVALANCHE TRANSISTOR

Contextual Info: Not Recommended for New Design Please Use BAT54C SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers *

pulse derating curve

Abstract: ZTX415
Contextual Info: Not Recommended for New Design Please Use ZTX415 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads

BLV62

Abstract: philips ELECTROLYTIC capacitor fe
Contextual Info: PH ILIPS bSE J> INTERNATIONAL B 711DfiEb ODbETfiD 5T4 • PHIN Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Poly-silicon emitter-ballasting

transistor military

Abstract: MS3155 MS3107 transistor MS3154 reader rf01 GSM Base Station RF TRANSISTOR 1.5 GHZ RF01 MS3106
Contextual Info: Winter 1997-1998 Microsemi's RF Products group in Montgomeriville, PA is supplier of RF Power Transistors for use in military/ space avionics and commercial cellular base station designs. Cellular GSM Base Station Transistor Lineups Microsemi RF Products has a

laser LED

Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor
Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF859 MRF859S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz.

BLF545

Abstract: 71009 SB 015 capacitor philips IEC134 VCA828 pu enamelled copper wire
Contextual Info: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF545 r -3 ^ / 3 5bE D 7110öSb OOMB'nM 1ÖT PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: N AUER P H IL IP S /D IS C R E T E bTE D bbS3T31 002T0B3 OCH M A P X _Product specification Philips Semiconductors_ UHF linear push-pull power transistor FEATURES • Poly-silicon emitter-ballasting resistors for an optimum

transistor 1fp

Abstract: 52ga 414n 53m diode
Contextual Info: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)

AVALANCHE TRANSISTOR

Abstract: FMMT417 ZTX413 ZTX415 4N7 CAPACITOR FMMT415 DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors
Contextual Info: Design Note 24 Issue 1 October 1995 The ZTX413 Avalanche Transistor Low Voltage Operation up to 50A standard transistors.The ZTX413 provides avalanche operation over a voltage range of 60 to 150V, and can handle pulse avalanche currents of up to 50A See Figure 1 . These features

Contextual Info: Philips S em iconductors bbSHTBl Q0301Mb ATS M APX Product specification UHF push-pull power MOS transistor — •— BLF545 N AMER PHILIPS/DISCRETE FEATURES b^E D _ PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

BLF545

Abstract: MCAB2 MCAB29 2322 731 capacitor 334 ceramic WCA832 sot26-8 MCA834 sot268 CS6-08
Contextual Info: Philips S em iconductors 00 30 14b ATS APX Product specification UHF push-pull power MOS transistor — — — 1 ^ _ FEATURES N BLF545 AMER PHILIPS/DISCRETE bTE » PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

HFA08TA60C

Contextual Info: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor