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    TRANSISTOR 2X4 Search Results

    TRANSISTOR 2X4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2X4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611 PDF

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586 PDF

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT413 SOT23 NPN silicon planar avalanche transistor Summary V BR CES = 150V, V(BR)CEO = 50V, IUSB = 25A Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal


    Original     		FMMT413 FMMT413 FMMT413TD FMMT41ia PDF

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
    Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design


    Original     		PDF

    edge emitter LED

    Abstract: AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413
    Text: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


    Original     		OT323 ZUMT413 20MHz 10KHz edge emitter LED AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413 PDF

    AVALANCHE TRANSISTOR

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BAT54C SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers *


    Original     		BAT54C OT323 ZUMT413 20MHz 10KHz AVALANCHE TRANSISTOR PDF

    pulse derating curve

    Abstract: ZTX415
    Text: Not Recommended for New Design Please Use ZTX415 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads


    Original     		ZTX415 ZTX413 20MHz 10KHz pulse derating curve ZTX415 PDF

    transistor military

    Abstract: MS3155 MS3107 transistor MS3154 reader rf01 GSM Base Station RF TRANSISTOR 1.5 GHZ RF01 MS3106
    Text: Winter 1997-1998 Microsemi's RF Products group in Montgomeriville, PA is supplier of RF Power Transistors for use in military/ space avionics and commercial cellular base station designs. Cellular GSM Base Station Transistor Lineups Microsemi RF Products has a


    Original     		Trans50 MS3009 MS3102 MS3155 MS3101 MS3156 MS3107 transistor military MS3155 MS3107 transistor MS3154 reader rf01 GSM Base Station RF TRANSISTOR 1.5 GHZ RF01 MS3106 PDF

    laser LED

    Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF


    Original     		ZTX413 20MHz 10KHz laser LED ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor PDF

    AVALANCHE TRANSISTOR

    Abstract: FMMT417 ZTX413 ZTX415 4N7 CAPACITOR FMMT415 DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors
    Text: Design Note 24 Issue 1 October 1995 The ZTX413 Avalanche Transistor Low Voltage Operation up to 50A standard transistors.The ZTX413 provides avalanche operation over a voltage range of 60 to 150V, and can handle pulse avalanche currents of up to 50A See Figure 1 . These features


    Original     		ZTX413 ZTX413 ZTX413, ZTX415 FMMT415 FMMT417 ED-14, DN24-1 AVALANCHE TRANSISTOR 4N7 CAPACITOR DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors PDF

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    HFA08TA60C

    Abstract: No abstract text available
    Text: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor


    Original     		HFA08TA60CPbF HFA08TA60C 12-Mar-07 PDF

    smd transistor ne c2

    Abstract: smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30
    Text: DISCRETE SEMICONDUCTORS E>^m S ln lE E T BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 Philips Sem iconductors 2000 Feb 17 PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor


    OCR Scan     		BLF2048 OT539A smd transistor ne c2 smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30 PDF

    LD08

    Abstract: LD0810-50
    Text: L D 0 8 1 0 -5 0 M/A-OOM Preliminary Specifications LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26V y M â C G tt & Microwave Products Outline Drawing 1, 2 .800 [20.32]I«—.562 [14.27]—► 2X .215 [5.461- r .235 [5.97] 2X4>.130 [3.30] Absolute Maximum Rating1


    OCR Scan     		LD0810-50 LD08 LD0810-50 PDF

    BLV62

    Abstract: philips ELECTROLYTIC capacitor fe
    Text: PH ILIPS bSE J> INTERNATIONAL B 711DfiEb ODbETfiD 5T4 • PHIN Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Poly-silicon emitter-ballasting


    OCR Scan     		711DfiEb BLV62 OT262A2 OT262A2 RA322 MF1A323 BLV62 philips ELECTROLYTIC capacitor fe PDF

    transistor cq 449

    Abstract: BLV62 MRA322 MBA970 8w RF POWER TRANSISTOR NPN C1663 MAPX
    Text: N AUER PH ILI PS/DISCRETE bT E Philips Semiconductors_ ]> • bbSBTBl GDETGBB QQ1 H A P X _Product specification UHF linear push-pull power transistor FEATURES MODE OF OPERATION c.w. class-AB f MHz 860 • Gold metallization ensures


    OCR Scan     		BLV62 OT262A2 OT262A2 MRA322 MRA377 transistor cq 449 BLV62 MRA322 MBA970 8w RF POWER TRANSISTOR NPN C1663 MAPX PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF859 MRF859S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz.


    OCR Scan     		MRF859 MRF859S PDF

    BLF545

    Abstract: 71009 SB 015 capacitor philips IEC134 VCA828 pu enamelled copper wire
    Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF545 r -3 ^ / 3 5bE D 7110öSb OOMB'nM 1ÖT PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		T-31-/3 BLF545 OT268 VCA828 BLF545 71009 SB 015 capacitor philips IEC134 VCA828 pu enamelled copper wire PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER P H IL IP S /D IS C R E T E bTE D bbS3T31 002T0B3 OCH M A P X _Product specification Philips Semiconductors_ UHF linear push-pull power transistor FEATURES • Poly-silicon emitter-ballasting resistors for an optimum


    OCR Scan     		bbS3T31 002T0B3 BLV62 MRA323 PDF

    transistor 1fp

    Abstract: 52ga 414n 53m diode
    Text: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)


    OCR Scan     		LS1S1M/S2M/53M NJL5151M E8256I) 52M/53M NJL5151M/52M/53M transistor 1fp 52ga 414n 53m diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips S em iconductors bbSHTBl Q0301Mb ATS M APX Product specification UHF push-pull power MOS transistor — •— BLF545 N AMER PHILIPS/DISCRETE FEATURES b^E D _ PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		Q0301Mb BLF545 OT268 bb53T31 MCA828 PDF

    BLF545

    Abstract: MCAB2 MCAB29 2322 731 capacitor 334 ceramic WCA832 sot26-8 MCA834 sot268 CS6-08
    Text: Philips S em iconductors 00 30 14b ATS APX Product specification UHF push-pull power MOS transistor — — — 1 ^ _ FEATURES N BLF545 AMER PHILIPS/DISCRETE bTE » PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		GD30mt BLF545 OT268 MCA835 MCA828 BLF545 MCAB2 MCAB29 2322 731 capacitor 334 ceramic WCA832 sot26-8 MCA834 sot268 CS6-08 PDF