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    TRANSISTOR 2SK2961 Search Results

    TRANSISTOR 2SK2961 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SK2961 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sK2961 equivalent

    Abstract: 2sk2961
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 2sK2961 equivalent 2sk2961

    k2961

    Abstract: transistor k2961 2sk2961 K296 k2961 Transistor transistor 2sk2961 2sK2961 equivalent
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 k2961 transistor k2961 2sk2961 K296 k2961 Transistor transistor 2sk2961 2sK2961 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961

    2SK2961

    Abstract: S 170 TRANSISTOR
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application l Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 2SK2961 S 170 TRANSISTOR

    K2961

    Abstract: transistor k2961 k2961 Transistor 2SK2961
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 K2961 transistor k2961 k2961 Transistor 2SK2961

    K2961

    Abstract: transistor k2961 2sK2961 equivalent 2SK2961
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 K2961 transistor k2961 2sK2961 equivalent 2SK2961

    K2961

    Abstract: transistor k2961 k2961 Transistor
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 K2961 transistor k2961 k2961 Transistor

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


    Original     		PDF SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    K2961

    Abstract: 2SK2961
    Text: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2961 100//S* K2961

    K2961

    Abstract: 2SK2961
    Text: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2961 K2961 2SK2961

    2SK2961

    Abstract: transistor 1127
    Text: T O SH IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION Low Drain-Source ON Resistance : R nS (ON) —0.2H (Typ.)


    OCR Scan     		PDF 2SK2961 100//A 20kfi) 2SK2961 transistor 1127

    k2961

    Abstract: 2SK2961
    Text: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2961 k2961 2SK2961

    K2961

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2 S K2 9 61 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2961 75MAX. 100/i K2961

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE L2- tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS R ELA Y DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION Low Drain-Source ON Resistance : Rd S (ON) = 0 .2 0 (Typ.)


    OCR Scan     		PDF 2SK2961 150-SOURCE

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M05 TYPE L2- tt-M O$V ? <; \c i q 1 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX. Low Drain-Source ON Resistance : Rüg (ON) —0.20 (Typ.)


    OCR Scan     		PDF 2SK2961 100/zA 120COMlî

    transistor 1127

    Abstract: transistor 2sk2961
    Text: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 5.1 M AX. APPLICATION • • • • Low Drain-Source ON Resistance : RüS(ON) = 0.20 (Typ.)


    OCR Scan     		PDF 2SK2961 100//A 75MAX. 20kil) 100/is^ transistor 1127 transistor 2sk2961