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    TRANSISTOR 2SD1862 Search Results

    TRANSISTOR 2SD1862 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD1862 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1AM5

    Abstract: 2SB1240 2SB1182 2SD1758 2SD1862
    Text: Medium power transistor 32V, 2A 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor


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    PDF 2SD1758 2SD1862 2SD1758 2SB1182 2SB1240 65Max. SC-63 R1010A 1AM5 2SB1240 2SD1862

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 32V, 2A 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor


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    PDF 2SD1758 2SD1862 2SB1182 2SB1240 2SD1758 65Max. SC-63 R1010A

    transistor

    Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
    Text: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.


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    PDF 2SB1188 2SB1182 2SB1240 2SB822 2SB1277 2SB911M 2SD1766 2SD1758 2SD1862 2SD1189F transistor SD1227 transistor 2SB1240 silicon pnp transistor transistor 2A

    2SD1758

    Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M


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    PDF 2SD1766 2SD1758 2SD1862 2SD1055 2SD1919 2SD1227M 2SB1188 2SB1182 2SB1240 2SB891F 96-217-B24 transistor 257 2SD1227M 2SB911 transistor 2SD1862

    2SD1862

    Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3


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    PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SD1862 2SB1240 2SB1182 T100

    2SB1182

    Abstract: 2SB1240 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3


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    PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SB1182 2SB1240 2SD1862 T100

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


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    PDF 2SB1182 2SB1240 2SD1758 2SD1862. 2SB1182 65Max. SC-63 R1010A

    2SB1182

    Abstract: 2SB1240 2SD1758 2SD1862
    Text: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


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    PDF 2SB1182 2SB1240 2SD1758 2SD1862. 2SB1182 65Max. SC-63 R1010A 2SB1240 2SD1862

    Untitled

    Abstract: No abstract text available
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3


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    PDF 2SD1766 2SD1758 2SD1862 2SB1188 2SB1182 2SB1240 2SD1766

    2SD1758

    Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3


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    PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 65Max. 2SB1240 2SB1182 2SB1188 2SD1862 T100

    2SB1182

    Abstract: 2SB1240 2SB1188 2SD1758 2SD1766 2SD1862 T100 302 ROHM
    Text: Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 Dimensions (Unit : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.9 2.3±0.2 3.0±0.2 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 0.65±0.1 0.75 2.3+0.2 −0.1


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    PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SB1182 2SB1240 R0039A 2SB1240 2SD1862 T100 302 ROHM

    2SB1188

    Abstract: No abstract text available
    Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05


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    PDF 2SB1188 2SB1182 2SB1240 2SD1766 2SD1758 2SD1862 2SB1188

    2SB1240

    Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5


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    PDF 2SB1188 2SB1182 2SB1240 2SB1182 2SB1188 2SD1766 2SD1758 2SB1240 transistor 2SB1240 2SD1862 T100

    2sb1240

    Abstract: 2sb118 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05


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    PDF 2SB1188 2SB1182 2SB1240 2SB1182 SC-62 SC-63 2sb1240 2sb118 2SD1758 2SD1766 2SD1862 T100

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1766 Features • • • 2.0Amp Medium Power Transistor 32 Volts Low VCE sat : VCE(sat) =0.5V(Typ.)(IC/IB=2.0A/0.2A) Complements the 2SB1188


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    PDF 2SD1766 2SB1188 OT-89 2SD1862)

    2SB1240

    Abstract: No abstract text available
    Text: 2SB1240 Transistor, PNP Features Dimensions Units : mm • available in ÀTV TV2 package • high power: Pq = I V J • low collector saturation voltage, typically VCE(sat) - 0.2 V at Ic/Ib = lA/—0.1 A complementary pair with 2SD1862 2SB1240 (ATV TV2)


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    PDF 2SB1240 2SD1862 2SB1240

    2SD1766

    Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1


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    PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M SC-62 2SD1766 2SD1758 2SD1766) 2SD1758) 2SD1862, 2SD1227M) 2SD1189F) 2SD1766 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055

    2iy transistor

    Abstract: 2SD1227M
    Text: h -? > v $ /Transistors 2SD1227M/2SD1862 2SD1227M 2SD1862 Xk°2*'>7^7°U-tfêNPN y bÿ>v*$ Epitaxil Planar NPN Silicon Transistor /Medium Power Amp. • £1-Jfi'+;£Eil/Dimensions Unit : mm 1) P c = l W i: ± # i'„ 2SD1227M 2SD1862 r 2.5 ± 0.2 6.8 i 0.2


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    PDF 2SD1227M/2SD1862 2SD1227M 2SD1862 2SD1227M 2SB911M SC-71 2iy transistor

    2SD1189F

    Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1


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    PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 2SB822/ 2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 2SB822 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


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    PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460

    2SC1740 transistor

    Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
    Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN


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    PDF 2SC2021LN 2SB821 2SB1276 2SC2021MLN O-92L O-92LS 2SB737 V2SD786 2SA1137 2SC1740 2SC1740 transistor A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819

    2SD1862

    Abstract: No abstract text available
    Text: 2SD1862 Transistor, NPN Features Dimensions Units : mm • a v a ila b le in A T V T V 2 p a c k a g e • lo w c o lle c to r s a tu ra tio n v o lta g e , ty p ic a lly V CE(sal) = 0.16 V a t Ic / I b ~ I A /0 .1 A • 2SD1862 (ATV TV2) I (i B to 2 b c o m p le m e n ta ry p a ir w ith 2 S B 1 2 4 0


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    PDF 2SD1862 2SD1862

    2SD1189F

    Abstract: 2SB1240 LL1000 g 2SD1758 2SD1766 2SD1862 2SD1919 2SD1055 2SD1227M 2SB911M
    Text: Transistors Medium Power Transistor 32V, 2A 2 S D 1 7 6 6 /2 S D 1 7 5 8 /2 S D 1 8 6 2 /2 S D 1 1 8 9 F / 2 S D 1 0 5 5 /2 S D 1 9 1 9 /2 S D 1 2 2 7 M •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). VcE(sat) = 0.16V (Typ.) 2SD1766


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    PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 891F/2SB822/2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 2SD1766 2SD1189F 2SB1240 LL1000 g 2SD1758 2SD1766 2SD1862 2SD1919 2SD1055 2SD1227M 2SB911M

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


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    PDF 2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337