TRANSISTOR 2SD1857 Search Results

TRANSISTOR 2SD1857 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 2SD1857 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)  ORDERING INFORMATION	Original	2SD1857 80MHz) 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R	PDF
TO92NL Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION	Original	2SD1857 80MHz) 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R 2SD1857G-x- TO92NL	PDF
2SD1875 Abstract: 2Sd-1875 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION	Original	2SD1857 80MHz) 2SD1875L-x-T92-B 2SD1875G-x-T92-B 2SD1875L-x-T92-K 2SD1875G-x-T92-K 2SD1875L-x- T92-R 2SD1875G-x- 2SD1875 2Sd-1875	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION	Original	2SD1857 80MHz) 2SD1857L-x-T60-K 2SD1857G-x-T60-K 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T 2SD1857L-x-T92-B 2SD1857G-x-T92-B	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251	Original	2SD1857 80MHz) O-92NL O-251 O-92NL O-251 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K	PDF
2SD1857 Abstract: 2sd1857l Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251	Original	2SD1857 80MHz) O-92NL O-251 O-92NL O-251 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857 2sd1857l	PDF
2SD1857L Abstract: QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL *Pb-free plating product number: 2SD1857L	Original	2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T9N-A-B 2SD1857L-x-T9N-A-B 2SD1857-x-T9N-A-K 2SD1857L-x-T9N-A-K 2SD1857L-x-T9N-A-B O-92NL 2SD1857L QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz	PDF
2SD1857L Abstract: 2SD1857 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92 1 TO-92NL *Pb-free plating product number: 2SD1857L	Original	2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T92-B 2SD1857L-x-T92-B 2SD1857-x-T92-K 2SD1857L-x-T92-K 2SD1857-x-T9N-B 2SD1857L-x-T9N-B 2SD1857L 2SD1857	PDF
Contextual Info: UTC 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES High breakdown voltage. BVCEO=120V Low collector output capacitance.(Typ.20pF at VCB=10V) *High transition frequency.(fT=80MHz) 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)	Original	2SD1857 80MHz) QW-R201-057	PDF
Contextual Info: UTC 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES High breakdown voltage. BVCEO=120V Low collector output capacitance.(Typ.20pF at VCB=10V) *High transition frequency.(fT=80MHz) 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)	Original	2SD1857 80MHz) 30MHz. QW-R201-057	PDF
2SD1857 Abstract: Transistor 2SD1857 2SB1236 2SC4132 2SD2343 T100 05 marking code transistor ROHM transistor 120v MPT3 marking CB Contextual Info: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 ! Features ! External dim ensions (Units : mm) 1) High breakdown voltage. (BVceo = 120V) 2) Low collector output capacitance. 2SC4132 (Typ. 20pF at V cb = 10V)	OCR Scan	2SC4132 2SD1857 2SD2343 80MHz) 2SB1236. 2SD1857 Transistor 2SD1857 2SB1236 2SD2343 T100 05 marking code transistor ROHM transistor 120v MPT3 marking CB	PDF
2SD1857A Contextual Info: 2SB1236A Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • 2SB1236A (ATVTV2) • high collector breakdown voltage BV qeo = —160 V high transition frequency • low output capacitance • complementary pair with 2SD1857A	OCR Scan	2SB1236A 2SD1857A 2SB1236A	PDF
Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1	Original	2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A	PDF
2SB1275 Abstract: 2SB1236A 2SD1857A 2SD1918 50MHZ Contextual Info: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A zFeatures 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.	Original	2SB1275 2SB1236A -160V -160V) 50MHZ) 2SD1918 2SD1857A. 2SB1275 2SB1236A 2SD1857A 50MHZ	PDF

2SB1275 Abstract: 2SD1857A 2SD1918 2SD2211 T100 Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD221112SD191812SD1857A •Features 1) High breakdown voltage.(BVcEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at Vcb = 10V) 3) High transition frequency.(fr = 80MHz) 4) Complements the 2SB1275/2SB1236A.	OCR Scan	2SD2211 2SD1918 2SD1857A 2SD221112SD191812SD1857A 80MHz) 2SB1275 /2SB1236A. 100ms 2SD1857A T100	PDF
Contextual Info: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 4.5 1.6 1.5 2.5 4.0 2SC4132 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V)	Original	2SC4132 2SD1857 80MHz) 2SB1236. 2SC4132 2SD1857 SC-62	PDF
Contextual Info: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)	Original	2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A	PDF
2SD1918 Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1	Original	2SD1918 2SD1857A 80MHZ) 2SB1236A. 2SD1857A 2SD1918 SC-63 R0039A	PDF
Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1	Original	2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A	PDF
2SD2211 Abstract: 80MHZ 2SB1275 2SD1857A 2SD1918 PW200 Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. 5.1	Original	2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A 2SD2211 80MHZ 2SB1275 2SD1857A PW200	PDF
2SB1275 Abstract: 2SD1918 2SB127 160V2 2SB1236A 2SD1857A 50MHZ Contextual Info: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.	Original	2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A 2SB127 160V2 2SB1236A 2SD1857A 50MHZ	PDF
2SB1236 Abstract: 2SD1857 transistor 120v Contextual Info: 2SB1236 Transistors Power Transistor −120V, −1.5A 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857. zExternal dimensions (Unit : mm)	Original	2SB1236 -120V, -120V) 50MHz) 2SD1857. 65Max. 2SB1236 2SD1857 transistor 120v	PDF
2SD2211 Abstract: 2SD2211 hfe 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100 Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A zExternal dimensions (Unit : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.	Original	2SD2211 2SD1918 2SD1857A 80MHZ) 2SB1275 2SB1236A. 2SD2211 2SD2211 hfe 2SB1236A 2SD1857A 80MHZ T100	PDF
2SB1236 Abstract: 2SD1857 Contextual Info: Power Transistor 120V, 2A 2SD1857 Dimensions (Unit : mm) 2SD1857 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz)	Original	2SD1857 65Max. 80MHz) 2SB1236. R0039A 2SB1236 2SD1857	PDF

TRANSISTOR 2SD1857 Search Results

TRANSISTOR 2SD1857 Result Highlights (5)

TRANSISTOR 2SD1857 Datasheets Context Search

TO92NL

2SD1875

2SD1857

2SD1857L

2SD1857L

2SD1857

2SD1857A

2SB1275

2SB1275

2SD1918

2SD2211

2SB1275

2SB1236

2SD2211

2SB1236