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    TRANSISTOR 2SD1812 Search Results

    TRANSISTOR 2SD1812 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD1812 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


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    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


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    PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2SD1812

    Abstract: 2SB1212 T103
    Text: h ~7 > y X $ /Transistors 2SD1812 2SD1812 X t ° ^ d r '> 7 7^ 7 V - ^ NPN y ' J = l > Y = 7 > y 7 , ^ Power Amp. Epitaxial Planar NPN Silicon Transistor • £W I£*>J-$SII|/Dimensions U n it : m m 1 ) i* W J ± - ? & 5 ( B V CEo = 1 6 0 V ) o 2) A S O tf j E l 'o


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    PDF 2SD1812 2SB1212tu 2SB1212. O-92L SC-51 2SD1812 2SB1212 T103

    Untitled

    Abstract: No abstract text available
    Text: 2SD1812 / T ransistors O C Q 1 Q 4 O NPN '>>;=!> 4 l ^JiH lliffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor • ^fJK rt'jiEl/D im ensions U n it: mm • 1) MME.T'$>Z (BVceo= 160V ) o 2) A S O iffc l'o 3) fi-A'lS < , CobA'IS^'o on 4) 2SB1212t 3 > 7 ‘ V T & Z 0


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    PDF 2SD1812 2SB1212t SC-51 2SB1212.

    2SC1740 transistor

    Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
    Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN


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    PDF 2SC2021LN 2SB821 2SB1276 2SC2021MLN O-92L O-92LS 2SB737 V2SD786 2SA1137 2SC1740 2SC1740 transistor A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819

    2SD1812

    Abstract: transistor 2sD1812
    Text: h* ~7> y 7. $ / I ransistors 2SD1812 2SD1812 X t Ti\rf\y—^ NPN y ' j :\>b =7> V 7 $ Epitaxial Planar NPN Silicon Transistor 4 l^ ^ J 1Slliffl/M e d iu m Power Amp. • £Vffi^t>£[2]/D'mens'ons U n it: mm 1) R E E 7 $> £> o B Vceo=160V 2) S O A 3) flA 'rs i < , C 0b / ) 'i6 ^ 'o


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    PDF 2SD1812 2SD1812 181-Q transistor 2sD1812

    2sd1812

    Abstract: No abstract text available
    Text: 40E ROHM CO L T D 7020=^ D 0005=^0 3 @RHM h 7 > y X ^ /Transistors 2SD1812 7 ^ 2 7 -/? X t ° ^ d r v ^ ; U 7 V - ^ NPN '> « /□ > 4 , ^ jiH |{,iffl/M e c liu m Power Amp. Epitaxial Planar NPN Silicon Transistor 2 S D 1 8 1 2 I ÿ fff^ jÈ IU /'D im e n s io n s Unit : mm


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    PDF 2SD1812 2SB1212. 2sd1812

    2SB1328

    Abstract: 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306
    Text: Transistors TO-92L T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application TO-92L I T0-92LS | MRT Part Nò.


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    PDF O-92L T0-92LS O-92L O-92LS O-92L. T0-92LS 2SA1819 2SB1328 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306

    2SD2008

    Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
    Text: Transistors TO-92L T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application


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    PDF O-92L T0-92LS O-92L O-92LS O-92L. O-92LS 2SA1819 2SD2008 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331

    B1329

    Abstract: transistor B1010 transistor a935 transistor b1329 transistor b1330 A1482 a935 a935 transistor transistor b1332 transistor a934
    Text: Transistors TO -92L • TO -92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L T0-92LS Pc W (Ta=25°C )


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    PDF -92LS O-92L O-92LS O-92L. T0-92L T0-92LS A1902 B1595 B1596 2SC4722 B1329 transistor B1010 transistor a935 transistor b1329 transistor b1330 A1482 a935 a935 transistor transistor b1332 transistor a934

    2SA1482

    Abstract: 2SD2008 2SA1903 2SD2010 2sc4722 2SD2005 2SA1861 2sa1820 2Sb1333 2SB1374
    Text: _ . . • Transistors 7028*^ DQQ7M31 TbT ■ R H M T0-92L T0-92LS •MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (Ta=25*C )


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    PDF DQQ7M31 T0-92L T0-92LS O-92L O-92LS O-92L. O-92L O-92LS T0-92L 2SA1482 2SD2008 2SA1903 2SD2010 2sc4722 2SD2005 2SA1861 2sa1820 2Sb1333 2SB1374

    2SC4722

    Abstract: 2SD2451 2sc4719 2SB1482 2SA1820
    Text: T ransistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO -92L MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 ‘ C) Package Application


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    PDF O-92L O-92LS O-92L O-92LS 5k10k 2SC4722 2SD2451 2sc4719 2SB1482 2SA1820

    2SB1482

    Abstract: 2SC4722 2sa1820 2SD2172
    Text: Transistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. P a ckage A pplication TO-92L TO-92LS MRT Part No.


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    PDF O-92L O-92LS O-92L O-92LS O-92L. -92LS 5k10k 2SB1482 2SC4722 2sa1820 2SD2172

    2SB1212

    Abstract: 2SD1812 transistor 2Sb1212
    Text: 2SB1212 h "7 > v ^ £ //Transistors PNP y V =i > K =7 > v * £ x 2SB1212 Epitaxial Planar PNP Silicon Transistor ^ Ç ^ litltlffl/M e c liu m Power Amp. W K ^ jiS /D im e n s io n s Unit : mm 1) S B E 7 i f e ^ o BVc e O = —160V 2) SOA*>''l£< , 3) C0b A ''/J '? t'o


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    PDF 2SB1212 --160V 2SD1812. 100m5 2SB1212 2SD1812 transistor 2Sb1212

    2SB1212

    Abstract: 2SD1812 T103
    Text: 7 > i* X 9 / J ransistors 2SB1212 0 Q R 4 0 4 9 □> /Medium Power Amp. Epitaxial Planar PNP Silicon Transistor • raft • ^ W ^ > il2 1 / D im e risio n s U nit: mm 1 ) * if f i? * 3 2) k S O if (B V c e o = - 1 6 0 V ) o < , fTt f l l ' o 3) C o b ^ ' J ' S t ' o


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    PDF 2SB1212 -160V 2SD1812tzi> -160V 2SD1812. T0-92L SC-51 2SB1212 2SD1812 T103

    Untitled

    Abstract: No abstract text available
    Text: 4 0E ROHM CO LTD hÿ T Û S Ô 'm D OÛDSSTO 4 HRHM 2SB1212 £ /Transistors " 7=27-/ ? X £ 0$ * y y J i s 7 ° l s - ± M P N P V ' j : \ > V y > v 7 , ^ 4,1 :ftÍH1ÍSÜ/Med¡um Power Amp. Epitaxial Planar PNP Silicon Transistor • ¿i-Jf2\t'}£I§]/'0imensions Unit : mm


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    PDF 2SB1212 -160V -160V 2SD1812.

    2SB1212

    Abstract: 2SD1812 transistor 2Sb1212
    Text: 2SB1212 / T ransistors h Z7 > y 2SB1212 X t f ^ d r V 7 ^ 7 ° U - ^ P N P '> U = I> Power Amp. Epitaxial Planar PNP Silicon Transistor • W f ^ jiH /D im e n s io n s Unit : mm 1) ¡ S f if f i? < 6 > 3 (B V c e o = - 1 6 0 V ) o 2 )A S O tf£ < , 3) C o b *^ J ^ t'o


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    PDF 2SB1212 2SD1812 T0-92L SC-51 2SB1212 transistor 2Sb1212

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


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    PDF 2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337

    2SD1966

    Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
    Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5


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    PDF 2SA785 2SA790 2SA790M 2SA806 2SA821 2SA825 2SA825S 2SA83Û 2SA830S 2SA854 2SD1966 2SD1255M 2SB maintenance IMB6 2SC2808