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    TRANSISTOR 2SC460 Search Results

    TRANSISTOR 2SC460 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC460 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2SC4603

    Abstract: No abstract text available
    Text: 2SC4603 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frewuency inverters


    Original     		PDF 2SC4603 2SC4603

    Untitled

    Abstract: No abstract text available
    Text: 2SC4603R FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frewuency inverters


    Original     		PDF 2SC4603R

    2SC4603R

    Abstract: No abstract text available
    Text: 2SC4603R FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frewuency inverters


    Original     		PDF 2SC4603R 2SC4603R

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    c4604

    Abstract: 2SC4604 2SA1761
    Text: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4604 2SA1761 c4604 2SC4604 2SA1761

    Untitled

    Abstract: No abstract text available
    Text: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4604 2SA1761

    Untitled

    Abstract: No abstract text available
    Text: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High-speed switching: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4604 2SA1761 O-92MOD

    2SC4602

    Abstract: No abstract text available
    Text: Ordering number:EN3148 NPN Triple Diffused Planar Silicon Transistor 2SC4602 Switching Regulator Applications Package Dimensions unit:mm 2069C [2SC4602] 4.5 3 1.2 2.55 Specifications 2.55 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD 2.7 2.55


    Original     		PDF EN3148 2SC4602 2069C 2SC4602] 2SC4602-applied 2SC4602

    2SA1762

    Abstract: 2SC4606
    Text: Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 6.9±0.1 1.0 0.85 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO


    Original     		PDF 2SA1762 2SC4606 2SA1762 2SC4606

    2SA1762

    Abstract: 2SC4606
    Text: Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 6.9±0.1 1.0 0.85 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO


    Original     		PDF 2SA1762 2SC4606 2SA1762 2SC4606

    C4604

    Abstract: 2SA1761 2SC4604
    Text: 2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4604 Power Amplifier Application. Power Switching Applications. • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High-speed switching: tstg = 0.5 s (typ.)


    Original     		PDF 2SC4604 2SA1761 C4604 2SA1761 2SC4604

    EN3146

    Abstract: 2SC4600
    Text: Ordering number:EN3146 NPN Triple Diffused Planar Silicon Transistor 2SC4600 Switching Regulator Applications Package Dimensions unit:mm 2069C [2SC4600] 4.5 1.4 3 1.2 2.55 2.55 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD 2.7 2 1.35 1 0.8


    Original     		PDF EN3146 2SC4600 2069C 2SC4600] 2SC4600-applied EN3146 2SC4600

    2SA1762

    Abstract: 2SC4606
    Text: Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 2.5±0.1 6.9±0.1 1.0 R 0.9 • Absolute Maximum Ratings * (Ta=25˚C) (0.85) Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SA1762 2SC4606 2SA1762 2SC4606

    2SC4601

    Abstract: SMD surface mount transistor BR
    Text: Transistors SMD Type NPN Triple Diffused Planar Silicon Transistor 2SC4601 TO-263 Unit: mm Features 1 .2 7 -0+ 0.1.1 Surface mount type device making the following possible. Reduction in the number of manufacturing processes +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max


    Original     		PDF 2SC4601 O-263 2SC4601-applied 2SC4601 SMD surface mount transistor BR

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
    Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81


    OCR Scan     		PDF 2SA673 2SA778 BB101C BB301M BB301C Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228

    Untitled

    Abstract: No abstract text available
    Text: SAfiYO Power Transistor Surface Mount Package SMP Surface Mount Power In recent years surface mount semiconductor products have found wide application from small-signal consumer equipment to high-power industrial equipment. To meet user needs, we offer Sanyo power transistor surface mount package SMP (Surface Mount Power) that makes possible


    OCR Scan     		PDF has500V) MT930706TR

    2SC4602

    Abstract: 2SC4602A
    Text: Ordering number: EN 3148 2SC4602 No.3148 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features . Surface mount type device making the following possible -Reduction in the number of manufacturing processes for 2SC4602-applied equipment


    OCR Scan     		PDF 2SC4602 2SC4602-applied 2SC4602 2SC4602A

    2SC4602A

    Abstract: No abstract text available
    Text: j Ordering number: EN 3148 _2SC4602 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features . Surface mount type device making the following possible -Reduction in the num ber of m anufacturing processes for 2SC4602-applied equipment


    OCR Scan     		PDF 2SC4602 2SC4602-applied 2SC4602A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4604 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. • SILICON NPN EPITAXIAL TYPE 2SC4604 Unit in mm 5.1 MAX Low Collector-Emitter Saturation Voltage : v CE sat = °-5V (max.) (Ic = 1.5A) High Speed Switching : tstg = 0.5/*s (Typ.)


    OCR Scan     		PDF 2SC4604 2SA1761

    4604

    Abstract: ic 4604 2SA1761 2SC4604
    Text: TOSHIBA 2SC4604 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. • • • SILICON NPN EPITAXIAL TYPE 2SC4604 Unit in mm 5.1 M AX Low Colleetor-Emitter Saturation Voltage : v CE sat = °-5V (max.) (Iq = 1.5A) High Speed Switching : ^ ^ = 0.5/^ (Typ.)


    OCR Scan     		PDF 2SC4604 2SA1761 961001EAA2' 4604 ic 4604 2SC4604