TRANSISTOR 2SC2060 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SA934

Abstract: 2SA934 transistor 2sc2060
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE z Power dissipation PCM: 0.75 z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934

2sa934

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE z Power Dissipation PCM: 0.75 z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934

2sc2060

Abstract: TO92-MOD
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2060 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power Dissipation PCM: 0.75 z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934

2SA934

Abstract: 2SA934 transistor 2sc2060
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power dissipation PCM: 0.75 W (Tamb=25℃) z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934

2SC2060

Abstract: 2SA934 transistor
Contextual Info: 2SC2060 TO-92MOD Transistor NPN TO-92MOD 5.800 6.200 1. EMITTER 1 2 3 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 0.400 0.600 Features 13.800 14.200 — Power dissipation PCM: 0.75 — Low saturation voltage (VCE(sat)=0.15V at 500mA) — Complementary pair with 2SA934

2sc2060

Abstract: TO 92L NPN Transistor 2SA934 transistor
Contextual Info: 2SC2060 TO-92L Transistor NPN TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 7.800 8.200 3. BASE 1 Features 2 3 0.600 0.800 — Power dissipation PCM: 0.75 — Low saturation voltage (VCE(sat)=0.15V at 500mA) — Complementary pair with 2SA934 W (Tamb=25℃) 0.350

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2060 ＴＯ－９２ＭＯＤ TRANSISTOR（ NPN ） 1.EMITTER FEATURE Power dissipation PCM : 0.75 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage

2sc2060

Contextual Info: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SC2060 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage 40 V V(BR)CBO:

2SC2060

Contextual Info: 2SC2060 2SC2060 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2SC2060

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T r a n s is t o r s ^ ^ 2SC2060 TRANSISTOR NPN FEATURES tj|p|wr dissipation TO-92M OD Pcm: 0.75W (Tamb=25'C) currant 1.EM ITTER Ic m : 1A 2.C O LLE C T O R - voltage 3.BASE V(BR)CBO: 40 V storage Junction tem perature range

2sa934

Abstract: 2sc2060
Contextual Info: MOE D ROHM CO LT» • TñSñ'm OQOShTS 1 ■ R H M 2SC2060 / T ransistors ; 2SC 20S0 — » ■ 7 T 2 7 - ; r Xb?$*ri/7JUyis-?M NPN 4 J ^3;tH,Illffi/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor • i+Jfi \H£E3/Dim ensions U n it: mm

2SC2060

Abstract: 2SA934 2SC2060 Q transistor 2SC2060
Contextual Info: 2SC2060 h 7 > v ^ £ /Transistors « w w w Epitaxial Planar NPN Silicon Transistor /Medium Power Amp. • • ft* 1 jiE l/D im e n s io n s Unit : mm) P c A ''* il'o S .8 ± 0 .2 4.8 ±0.2 PC =750m W 2) VcE(sat)*'' < LTl' 5 0 V c E (s a t)= 0 .1 5 V (Typ.)

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2SC2060

Abstract: 2SA934 2SC2060 Q A934
Contextual Info: 2SC2060 h "7 > V Z. $ /Transistors 2SC2060 x t 0$ * y r J l ' 7 ° l s - j - & N P N '> • ; = ] > /M edium Power Amp. Epitaxial Planar NPN Silicon Transistor • «a • \H ± E I/D im e n s io n s U n it : mm 1) P c = 7 5 0 m W t * ^ l ' o 2) V Ce ( sat |= 0 .1 5 V (at 500mA) ¿ f g ; < j g

2SB1328

Abstract: 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application TO-92L I T0-92LS | MRT Part Nò.

2SD2008

Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
Contextual Info: Transistors TO-92L • T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application

2SA1482

Abstract: 2SD2008 2SA1903 2SD2010 2sc4722 2SD2005 2SA1861 2sa1820 2Sb1333 2SB1374
Contextual Info: _ . . • Transistors 7028*^ DQQ7M31 TbT ■ R H M T0-92L •T0-92LS •MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (Ta=25*C )

2SB1333

Abstract: 2SD2006 2SD2005 2SD2010 2SD2008 2SA1861 2SD2011 2SB1306 2sd2159 2SB1482
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L I T0-92LS | MRT Part Nò.

2SC4722

Abstract: 2SD2451 2sc4719 2SB1482 2SA1820
Contextual Info: T ransistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO -92L MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 ‘ C) Package Application

2SB1482

Abstract: 2SC4722 2sa1820 2SD2172
Contextual Info: Transistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. P a ckage A pplication TO-92L TO-92LS MRT Part No.