2N696
Abstract: No abstract text available
Text: 2N696 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021)
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2N696
O205AD)
2N696
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Untitled
Abstract: No abstract text available
Text: 2N696 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021)
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2N696
O205AD)
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2N696
Abstract: TRANSISTOR 2n696
Text: 2N696 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N696 is a Silicon NPN Transistor, mounted in a hermetically sealed metal package, designed for general purpose amplifier and switching applications. MAXIMUM RATINGS TA=25°C unless otherwise noted
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2N696
2N696
150mA,
150mA
20MHz
TRANSISTOR 2n696
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2n697
Abstract: TRANSISTOR 2n697 2N696 2N697 equivalent 2N697 JAN 2N697S 2N696S
Text: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)
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MIL-PRF-19500/99
2N696
2N696S
2N697
2N697S
2N696
2N697
MIL-PRF-19500/
MIL-PRF-19500/99)
TRANSISTOR 2n697
2N697 equivalent
2N697 JAN
2N697S
2N696S
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2N697 JAN
Abstract: 2N697
Text: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)
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MIL-PRF-19500/
2N696
2N696S
2N697
2N697S
2N696
2N697
MIL-PRF-19500/99)
2N697 JAN
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2n697
Abstract: TRANSISTOR 2n697 2N696 2N696S
Text: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ T A = 250C 1 @ T C = 250C (2)
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MIL-PRF-19500/99
2N696
2N696S
2N697
2N697S
2N696,
2N696s,
2N697,
TRANSISTOR 2n697
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2N696
Abstract: No abstract text available
Text: 2N696 NPN Transistor 3.50 Transistors Bipolar Silicon NPN Low-Power Transistors Am. Page 1 of 1 Enter Your Part # Home Part Number: 2N696 Online Store 2N696 Diodes NP N T rans is to r Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N696
2N696
com/2n696
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Untitled
Abstract: No abstract text available
Text: , One. !j C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N696 NPN SILICON TRANSISTOR JEDEC TO-39 CASE MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL VCBO Collector-Base Voltage UNITS
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2N696
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MIL-S-19500
Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S
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2N497
2N498
2N656
2N657
2N696
2N697
2N1131
2N1132
2N718A
2N1613
MIL-S-19500
2902n
TRANSISTOR 2n697
2N3700 DIE
MIL-S-19500 FOR POWER LINE TRANSISTOR
2N497
2N497 JAN
2n2222 jan
2N657
2N910 JAN
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TRANSISTOR 2n697
Abstract: 2N697S 2N696S 2N697 2N696 TRANSISTOR 2n696
Text: The documentation and process conversion measures necessary to comply with this amendment shall be completed by 16 May, 2000. MIL-S-19500/99E AMENDMENT 3 16 February, 2000 SUPERSEDING AMENDMENT 2 15 July 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,
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MIL-S-19500/99E
2N696,
2N697,
2N696S
2N697S
MIL-S-19500/99E,
MIL-S-19500/99E
TRANSISTOR 2n697
2N697S
2N697
2N696
TRANSISTOR 2n696
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2N6964
Abstract: No abstract text available
Text: SI LICONIX INC lflE D fCTSiRconix JmM incorporataci • Ô254735 0Q1S1GS 7 2N6964 'T-^e -i3 N-Channel Enhancement Mode Transistor QPL product is in accordance with MIL-S-19500/568 T0-210AC TO-61) Isolated Case TOP VIEW This device contains beryllium oxide
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SS473S
2N6964
MIL-S-19500/568
O-210AC
T-39-13
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BU 4520
Abstract: 2N6962 TO210AC
Text: IflE D SILICONIX INC • ÖSS47BS GOISCH? 1 ■ f 2N6962 N-Channel Enhancement Mode Transistor QPL product is in accordance with MIL-S-19500/568 T0-210AC TO-61 Isolated Case TOP VIEW This device contains beryllium oxide PRODUCT SUMMARY ■d V (BRJDSS 100
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flSS47BS
2N6962
MIL-S-19500/568
O-210AC
1008C
BU 4520
TO210AC
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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2N2540
Abstract: 2N2846 2n5219 MPSD05 2N1959 2n3299
Text: 34 MOTOROLA SC -CDIODES/OPTO} D 1 L3fc,7355 □□37T74 34C 37974 7 " - 3 r - /$• SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A DIE NO. — LINE SOURCE — DMB101 i npn This die provides performance similar to that of the following device types:
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37T74
2C2222A
DMB101
2N696*
2N697
2N731
2N1420*
2N1613
2N1711
2N1959*
2N2540
2N2846
2n5219
MPSD05
2N1959
2n3299
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