TRANSISTOR 2N6520 Search Results

2N6520 DIODES

Abstract: 2N6520 transistor 2N6520
Contextual Info: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25

Contextual Info: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25

Contextual Info: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA*25t: C haracteristic Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 251

Contextual Info: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C

d1711

Abstract: TRANSISTOR D 471 2N6520
Contextual Info: SA MSUNG SEMICONDUCTOR .INC 2N6520 14E D | 0007200 T | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current

Contextual Info: 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Symbol

2N6520

Abstract: 2N6520 DIODES transistor 2N6520 2N6517
Contextual Info: 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Symbol

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

Contextual Info: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • • High Voltage Transistor Collector-Emitter Voltage: VCEO = 350V Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

2N6517C

Abstract: 2N6517 transistor 2n6517 2N6520 c 458 c transistor
Contextual Info: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • High Voltage Transistor Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector

transistor 2n6517

Contextual Info: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • High Voltage Transistor Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector

2N6517

Abstract: 2N6520
Contextual Info: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ris tic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C

2N6520BU

Abstract: 2N6520 2N6520TA
Contextual Info: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N6517

Abstract: 2N6520
Contextual Info: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N6520

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current Base Current C ollector D issipation

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent Base C urrent C ollecto r D issipation

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C Characteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector D issipation

Contextual Info: 2N6519 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25t; C haracteristic Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 251C

Contextual Info: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25t: C haracteristic Collector-Base Voltage Collector-Em ttter Voltage Emitter-Base Voltage Collector Currant Base Current Collector Dissipation Derate above 251

Contextual Info: 2N6519 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25°C

Contextual Info: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25°C

Contextual Info: 2N6519 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK