TRANSISTOR 2N6517 Search Results

2N6515

Abstract: 2N6517
Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Symbol

2N6520

Abstract: 2N6520 DIODES transistor 2N6520 2N6517
Contextual Info: 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Symbol

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

Contextual Info: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • • High Voltage Transistor Collector-Emitter Voltage: VCEO = 350V Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

2N6517C

Abstract: 2N6517 transistor 2n6517 2N6520 c 458 c transistor
Contextual Info: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • High Voltage Transistor Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector

transistor 2n6517

Contextual Info: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • High Voltage Transistor Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector

2N6517

Abstract: 2N6520
Contextual Info: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N6520BU

Abstract: 2N6520 2N6520TA
Contextual Info: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N6517

Abstract: 2N6520
Contextual Info: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo = 3 5 0 V • Collector Dissipation'. Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA= 2 5 ) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

2N6517

Abstract: 2N6520
Contextual Info: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo = 3 5 0 V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage

Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAG E TRANSISTOR T O -92 • C ollector-E m itter Voltage: V C e o = 3 5 0 V • C ollector D issipation: Pc m ax =625m W ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage

BC108 characteristic

Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

BC237

Abstract: equivalent to BC177 2n6431
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

2N6515

Abstract: 2N6517
Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • C ollecto r-E m itte r V oltage: V Ceo = 3 5 0 V • C o llecto r D issipation: Pc m a x =62 5 m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic C ollector-B ase V oltage C ollecto r-E m itte r V oltage

transistor BF245

Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its

Transistor 2N2905A

Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

SOT23 JEDEC standard orientation pad size

Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its