TRANSISTOR 2N6517 Search Results

TRANSISTOR 2N6517 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 2N6517 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6515 Abstract: 2N6517 Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	Original	2N6517 625mW 2N6515 100mA, Width300s, 2N6517	PDF
Untitled Abstract: No abstract text available Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	Original	2N6517 625mW 2N6515	PDF
Untitled Abstract: No abstract text available Text: 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Symbol	Original	2N6520 -350V 625mW 2N6517	PDF
2N6520 Abstract: 2N6520 DIODES transistor 2N6520 2N6517 Text: 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Symbol	Original	2N6520 -350V 625mW 2N6517 2N6520 2N6520 DIODES transistor 2N6520 2N6517	PDF
TRANSISTORS BJT bc548 Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002	Original	OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302	PDF
Untitled Abstract: No abstract text available Text: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • • High Voltage Transistor Collector-Emitter Voltage: VCEO = 350V Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)	Original	2N6517 625mW 2N6520	PDF
2N6517C Abstract: 2N6517 transistor 2n6517 2N6520 c 458 c transistor Text: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • High Voltage Transistor Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector	Original	2N6517 625mW 2N6520 2N6517C 2N6517C 2N6517 transistor 2n6517 2N6520 c 458 c transistor	PDF
transistor 2n6517 Abstract: No abstract text available Text: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • High Voltage Transistor Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector	Original	2N6517 625mW 2N6520 2N6517C transistor 2n6517	PDF
2N6517 Abstract: 2N6520 Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	2N6520 -350V 625mW 2N6517 2N6517 2N6520	PDF
2N6520BU Abstract: 2N6520 2N6520TA Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	2N6520 -350V 625mW 2N6517 2N6520 O-92-3 2N6520BU 2N6520TA	PDF
2N6517 Abstract: 2N6520 Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	2N6520 -350V 625mW 2N6517 2N6517 2N6520	PDF
Untitled Abstract: No abstract text available Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo = 3 5 0 V • Collector Dissipation'. Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA= 2 5 ) C haracteristic Collector-Base Voltage Collector-Em itter Voltage	OCR Scan	2N6517 625mW 2N651S lc-100mA, 100mA	PDF
2N6517 Abstract: 2N6520 Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	2N6520 -350V 625mW 2N6517 2N6517 2N6520	PDF
Untitled Abstract: No abstract text available Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo = 3 5 0 V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage	OCR Scan	2N6517	PDF

Untitled Abstract: No abstract text available Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAG E TRANSISTOR T O -92 • C ollector-E m itter Voltage: V C e o = 3 5 0 V • C ollector D issipation: Pc m ax =625m W ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage	OCR Scan	2N6517 2N6515	PDF
BC108 characteristic Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a	Original	MUN5211DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 characteristic BC237 c 2026 y transistor msc2295 marking 7m SOT-323	PDF
BC237 Abstract: equivalent to BC177 2n6431 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431	PDF
BC237 Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device	Original	SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1	PDF
2N6515 Abstract: 2N6517 Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • C ollecto r-E m itte r V oltage: V Ceo = 3 5 0 V • C o llecto r D issipation: Pc m a x =62 5 m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic C ollector-B ase V oltage C ollecto r-E m itte r V oltage	OCR Scan	2N6517 625mW 2N6515 100HA, 100mA, 300ns, 2N6517	PDF
transistor BF245 Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The	Original	OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its	Original	Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237	PDF
Transistor 2N2905A Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a	Original	MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92	PDF
SOT23 JEDEC standard orientation pad size Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its	Original	70/SOT Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237	PDF

TRANSISTOR 2N6517 Search Results

TRANSISTOR 2N6517 Result Highlights (5)

TRANSISTOR 2N6517 Datasheets Context Search

2N6515

Untitled

Untitled

2N6520

TRANSISTORS BJT bc548

Untitled

2N6517C

transistor 2n6517

2N6517

2N6520BU

2N6517

Untitled

2N6517

Untitled

Untitled

BC108 characteristic

BC237

BC237

2N6515

transistor BF245

BC237

Transistor 2N2905A

SOT23 JEDEC standard orientation pad size

BC237