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    TRANSISTOR 2N5179 Search Results

    TRANSISTOR 2N5179 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N5179 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5179 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5179 type is a silicon NPN RF transistor, manufactured by the epitaxial planar process, designed for VHF/UHF amplifier, oscillator, and converter applications.


    Original     		PDF 2N5179 2N5179 100MHz 500MHz 200MHz 200MHz,

    ny transistor

    Abstract: 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90
    Text: PROCESS CP317 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS


    Original     		PDF CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 ny transistor 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90

    PN3563 equivalent

    Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317
    Text: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å


    Original     		PDF CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 22-March PN3563 equivalent 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    transistor 2N5179

    Abstract: 2N5179
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO 20 Collector -Base Voltage VCEO 12 Collector -Emitter Voltage


    Original     		PDF ISO/TS16949 2N5179 C-120 transistor 2N5179 2N5179

    2N5179

    Abstract: schematic diagram dc converter 72 v to 12 v 714PS
    Text: 2N5179 VHF/UHF AMPLIFIER DESCRIPTION The 2N5179 is a silicon planar epitaxial NPN transistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up to 500 MHz. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5179 2N5179 schematic diagram dc converter 72 v to 12 v 714PS

    2N5179

    Abstract: No abstract text available
    Text: , Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5179 TO-72 NPN SILICON PLANAR TRANSISTOR Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO Collector -Base Voltage


    Original     		PDF 2N5179 12DEG 48DEG 325gm/1Kpcs 32kgs 2N5179

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION


    Original     		PDF 2N5179 C-120

    2N5179

    Abstract: D 431
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Boca Semiconductor Corp BSC Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5179 C-120 2N5179 D 431

    npn UHF transistor 2N5179

    Abstract: No abstract text available
    Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters


    Original     		PDF 2N5179 npn UHF transistor 2N5179

    2N5179

    Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10


    Original     		PDF 2N5179 2N5179 npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10


    Original     		PDF 2N5179 2N5179

    2N5179

    Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc


    Original     		PDF 2N5179 MSC1305 2N5179 ic 741 datasheet pdf of 741 ic IC 741 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179

    2N5179

    Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc


    Original     		PDF 2N5179 2N5179 transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    TRANSISTOR 2N2950

    Abstract: 2N2950 2N5342 2N3137 transistor 2n4959 2N4427 2N5032 Transistor 2N3866 transistor 2n5109 2N3600
    Text: GENERAL TRANSISTOR CORP 54E D • 3=126001 0 0 0 0 0 7 b M ■ General Transistor Corporation *f “ 3 1" O I 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 * Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN TRANSISTORS FOR RF APPLICATIONS


    OCR Scan     		PDF 312fl001 2N91S 2N2857 2N3600 2N3839 2N5031 2N5032 2N53420 2N5342 2N6304 TRANSISTOR 2N2950 2N2950 2N3137 transistor 2n4959 2N4427 Transistor 2N3866 transistor 2n5109

    RCA-2N5179

    Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
    Text: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as


    OCR Scan     		PDF 2N5179 RCA-2N5179* 2N5179 TA7319. 482mm) RCA-2N5179 2n5179 equivalent TA7319 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor

    2n5179

    Abstract: t-31-21 MMBT5179
    Text: 2N5179/PN5179/MMBT5179 p - NATL SEMICOND DISCRETE - H E D | bS011i30 National _ Semiconductor PN5179 2N5179 Q[]372Mfl fl | T-3/-2I MMBT5179 TL/G/10100-5 NPN RF Transistor Electrical Characteristics T a = 25°C unless otherwise noted Min P aram eter Sym b o l


    OCR Scan     		PDF 2N5179 TL/Q/10100-12 D037EMÃ MMBT5179 TL/G/10100-5 TL/Q/10100-1 bsail30 T-31-21 2n5179 t-31-21 MMBT5179

    2N5179

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 4.5 dB @ 200 MHz HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICO N RF HIGH FREQ UENCY TRANSISTOR . . . designed p r im a r ily fo r use in high -g a in , lo w -n o is e a m p lifie r , o s c il­ la to r, and m ix e r a p p lic a tio n s .


    OCR Scan     		PDF 2N5179 35flo 2N5179

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10


    OCR Scan     		PDF 2N91B 2N2857 2N3600 2N3839 2N5031 2N5032 2N5179 2N5842 2N6304 2N6305

    2N5179

    Abstract: No abstract text available
    Text: 2N5179/PN5179/MMBT5179 National I Semiconductor 2 PN5179 2N5179 MMBT5179 C /^ O T frJJ ^ 7 VK /M / jf /M U E- U D r. C TO- 7 2 ,y u TL/G/10100-12 \ A b u iv itr T 0 ’ 256 TO -9 2 (SOT -2 3 TL/G/10100-5 TL/G/10100-1 NPN RF Transistor Electrical Characteristics


    OCR Scan     		PDF 2N5179/PN5179/MMBT5179 2N5179 PN5179 MMBT5179 TL/G/10100-12 TL/G/10100-5 TL/G/10100-1 2N5179