Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2N50E Search Results

    TRANSISTOR 2N50E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3081F
    		Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3082
    		Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3127MZ
    		Rochester Electronics LLC CA3127 - Transistor Array Visit Rochester Electronics LLC Buy
    CA3046
    		Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    5496J/B
    		Rochester Electronics LLC 5496 - Shift Register, 5-Bit, TTL Visit Rochester Electronics LLC Buy

    TRANSISTOR 2N50E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n50e

    Abstract: transistor 2N50E 4-490 MOTOROLA
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD2N50E TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te r m in a tio n


    OCR Scan     		2N50E 2n50e transistor 2N50E 4-490 MOTOROLA PDF

    t2n50e

    Abstract: 2n50e transistor 2N50E MTD2N50ET4 MTD2N50E1 MTD2N50 AN569 MTD2N50E
    Contextual Info: MTD2N50E Preferred Device Power MOSFET 2 Amps, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		MTD2N50E r14525 MTD2N50E/D t2n50e 2n50e transistor 2N50E MTD2N50ET4 MTD2N50E1 MTD2N50 AN569 MTD2N50E PDF

    t2n50e

    Abstract: 2n50e transistor 2N50E MTD2N50ET4
    Contextual Info: MTD2N50E Preferred Device Power MOSFET 2 Amps, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		MTD2N50E r14525 MTD2N50E/D t2n50e 2n50e transistor 2N50E MTD2N50ET4 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF