TRANSISTOR 2E Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sc1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that

BSY59

Abstract: TRANSISTOR W 59
Contextual Info: BSY59 Not for new developm ent PNP Transistor for switching applications The transistor B S Y 59 is an epitaxial silicon planar PNP transistor in a plastic case 11 A 3 DIN 41869 SO T-25 . The transistor is especially designed for use as switch of medium speed as well as for universal application.

2SD2696

Abstract: EMX28
Contextual Info: EMX28 Transistors Low frequency transistor, complex 2-elements Bipolar Transistor EMX28 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package.

2SD2696

Abstract: EMX28
Contextual Info: Low frequency transistor Complex 2-elements Bipolar Transistor EMX28 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package. Collector saturation voltage is low.

2SC1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that in millimeters

2SC1733

Abstract: 2SC1275 2SC127
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1733 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE PACKAGE DIMENSIONS D E S C R IP T IO N in millimeters The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that

transistor tic 106

Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
Contextual Info: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.

11105 IC

Abstract: npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5
Contextual Info: BFS17 NPN Silicon planar RF transistor BFS 17 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , for use in film circuits up into the GHz range. The transistor marked: MA 1±M5 1-0.05 r* * ? * * • ; T ype Code

BCY67

Abstract: HTI 2E 101S Q62702-C254
Contextual Info: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in

LDO sot23

Abstract: APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181
Contextual Info: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: pass transistor, linear regulator, LDO, increase LDO current, more load current Jan 24, 2003 APPLICATION NOTE 1861 Pass Transistor Boosts Current from Negative Linear Regulator Abstract: The addition of a pass transistor to the circuit of Figure 1 allows the linear regulator LDO to deliver

BFX60

Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier

Contextual Info: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

tyco igbt

Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit
Contextual Info: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

smd transistor JJ

Abstract: t8 smd transistor smd NE mbc1B transistor 75 U50 BLT14
Contextual Info: Philips Semiconductors Preliminary specification UHF power transistor BLT14 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.

transistor buv 90

Abstract: BCY 85 Q60203-Y66 BCY 66
Contextual Info: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).

TRANSISTOR BO 346

Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296
Contextual Info: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

NTC 220-11

Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,

RF Power transistor

Abstract: TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 2 RF power transistors characteristics RF POWER TRANSISTOR CHARACTERISTICS 2.1 This section describes how to interpret and use the data published by Philips Semiconductors on its transmitting

Contextual Info: KST92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Base Voltage : KST92 : KST93 Collector-Emitter Voltage : KST92 : KST93 Emitter-Base Voltage Collector Current Collector Dissipation

2SC1275

Abstract: 2sc1927
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.

Contextual Info: BUD600 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA