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    TRANSISTOR 2907A Search Results

    TRANSISTOR 2907A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2907A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2907 TRANSISTOR PNP

    Abstract: 2907a TRANSISTOR PNP 2907A transistor 2222a npn 2907A 2907a transistor transistor 2907 2N2907 PNP Transistor to 92 2907 ST 2222
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


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    2N2907 2N2907A 150mA, 500mA, 100MHz 2907 TRANSISTOR PNP 2907a TRANSISTOR PNP 2907A transistor 2222a npn 2907A 2907a transistor transistor 2907 2N2907 PNP Transistor to 92 2907 ST 2222 PDF

    2907 TRANSISTOR PNP

    Abstract: 2907a TRANSISTOR PNP 2907a
    Text: 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


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    2N2907 2N2907A 500mA, 150mA, 100MHz 2907 TRANSISTOR PNP 2907a TRANSISTOR PNP 2907a PDF

    2907 TRANSISTOR PNP

    Abstract: 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


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    2N2907 2N2907A 150mA, 500mA, 100MHz 2907 TRANSISTOR PNP 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222 PDF

    2907 TRANSISTOR PNP

    Abstract: 2907a TRANSISTOR PNP MMBT2222 MMBT2907 MMBT2907 2F
    Text: MMBT2907/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2222/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


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    MMBT2907/ALT1 MMBT2222/ALT1 225mW OT-23 2907 TRANSISTOR PNP 2907a TRANSISTOR PNP MMBT2222 MMBT2907 MMBT2907 2F PDF

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    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G S-LMBT2907LT1G S-LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40


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    LMBT2907LT1G LMBT2907ALT1G S-LMBT2907LT1G S-LMBT2907ALT1G Alumin2907LT1G OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 TRANSISTOR NPN+PNP SOT-363 FEATURE Epitaxial planar die construction One 2222A NPN One 2907A PNP z Ideal for power amplification and switching MARKING: K27


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    OT-363 MMDT2227 OT-363 -500mA -150mA, -15mA -500mA, PDF

    LMBT2907ALT1G

    Abstract: LMBT2907LT1G 1N916 LMBT2907
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage


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    LMBT2907LT1G LMBT2907ALT1G LMBT2907LT1G OT-23 LMBT2907ALT1G 1N916 LMBT2907 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP


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    MMDT2227 222A-Type 907A-Type OT-363 OT-363, MIL-STD-202, -150mA, -15mA -500mA, -50mA PDF

    MARKING K27

    Abstract: NPN2222A k27 transistor k27 sot-363
    Text: NEW PRODUCT MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP


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    MMDT2227 222A-Type 907A-Type OT-363 OT-363, MIL-STD-202, -150mA, -15mA -500mA, -50mA MARKING K27 NPN2222A k27 transistor k27 sot-363 PDF

    K27 pnp

    Abstract: K27 npn K27 SOT-363 MARKING k27 sot-363
    Text: SPICE MODELS: MMDT2227 MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • A Complementary Pairs One 2222A Type NPN One 2907A Type (PNP) Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching


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    MMDT2227 OT-363 J-STD-020C DS30122 K27 pnp K27 npn K27 SOT-363 MARKING k27 sot-363 PDF

    2907 TRANSISTOR PNP

    Abstract: 1N916 LMBT2907 LMBT2907ALT1 LMBT2907ALT1G LMBT2907LT1 LMBT2907LT1G Lo8.3 LO81
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1 LMBT2907ALT1 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V


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    LMBT2907LT1 LMBT2907ALT1 LMBT2907LT1 OT-23 2907 TRANSISTOR PNP 1N916 LMBT2907 LMBT2907ALT1 LMBT2907ALT1G LMBT2907LT1G Lo8.3 LO81 PDF

    transistor 2222a

    Abstract: 2222A 2907a npn 2907A 2907a TRANSISTOR PNP DMB2227A maximum current rating of 2907A pnp transistor pnp 2222a
    Text: DMB2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • NEW PRODUCT • • • Complementary Pair Epitaxial Planar Die Construction One 2222A Type NPN , One 2907A Type (PNP) Ideal for Low Power Amplification and Switching


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    DMB2227A OT-26 DS31217 transistor 2222a 2222A 2907a npn 2907A 2907a TRANSISTOR PNP DMB2227A maximum current rating of 2907A pnp transistor pnp 2222a PDF

    P2T2907

    Abstract: P2907 PM2907A PM2907 PZT2222AT1 PZT2907AT1 PZT2907AT3 11111111M 30i sot223 P2907A
    Text: MOTOROU Order this document by P~2907ATllD SEMICONDUCTOR TECHNICAL DATA PNP Silicon EpitmiaI Wansistor P2T2907ATI This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


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    2907ATllD P2T2907ATI OT-223 PZT2222AT1 PZT2907AT1 MK145BP, 2PHX25151F-5 2907ATIID P2T2907 P2907 PM2907A PM2907 PZT2222AT1 PZT2907AT3 11111111M 30i sot223 P2907A PDF

    Untitled

    Abstract: No abstract text available
    Text: DMB2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • N EW PRODU CT • • • Complementary Pair Epitaxial Planar Die Construction One 2222A Type NPN , One 2907A Type (PNP) Ideal for Low Power Amplification and Switching


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    DMB2227A OT-26 DS31217 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR LMBT2907LT1 LMBT2907ALT1 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage


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    LMBT2907LT1 LMBT2907ALT1 LMBT2907LT1 OT-23 PDF

    transistor k70

    Abstract: No abstract text available
    Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar


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    CMKT2207 OT-363 X10-4 X10-4 OT-363 13-November transistor k70 PDF

    KI 2222A

    Abstract: transistor 2222a sot-363 MARKING l0
    Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS­ TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar


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    CMKT2207 OT-363 150mA, KI 2222A transistor 2222a sot-363 MARKING l0 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    transistor 2222a

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


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    14-pin TPQA06 TPQA55 TPQA56 PSA55 PSA56 2N2907 2N3904 2N3906 transistor 2222a PDF

    CMPT2907A

    Abstract: No abstract text available
    Text: Central C M P T 2907A sem ico n d u cto r Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactu red by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose


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    CMPT2907A OT-23 500mA 100MHz 150mA, PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NTM 2907A G EN ER A L P U R P O S E A M P LIFIE R , HIGH S P E E D SW ITCH IN G P N P SILICON E P IT A X IA L T R A N S IS T O R MINI M O LD DESCRIPTIO N T he N T M 2 9 0 7 A is P N P Transistor, designed for general purpose am plifier and high speed sw itching applications for H yb rid 1C.


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    k27 transistor

    Abstract: NPN2222A MARKING K27 k27 sot-363 MMDT2227 PNP2907A LC 300-S
    Text: MMDT2227 TRANSYS ELECTRONICS COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features_ Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP Ideal for Low Power Amplification and


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    MMDT2227 222A-Type 907A-Type OT-363, MIL-STD-202, PNP2907A NPN2222A OT-363 -150mA, -15mA k27 transistor MARKING K27 k27 sot-363 MMDT2227 LC 300-S PDF