TRANSISTOR 2907A Search Results

transistor k70

Contextual Info: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar

KI 2222A

Abstract: transistor 2222a sot-363 MARKING l0
Contextual Info: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS­ TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar

2907 TRANSISTOR PNP

Abstract: 2907a TRANSISTOR PNP 2907A transistor 2222a npn 2907A 2907a transistor transistor 2907 2N2907 PNP Transistor to 92 2907 ST 2222
Contextual Info: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.

2907 TRANSISTOR PNP

Abstract: 2907a TRANSISTOR PNP 2907a
Contextual Info: 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.

2907 TRANSISTOR PNP

Abstract: 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222
Contextual Info: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor 2222a

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

CMPT2907A

Contextual Info: Central C M P T 2907A sem ico n d u cto r Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactu red by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

2907 TRANSISTOR PNP

Abstract: 2907a TRANSISTOR PNP MMBT2222 MMBT2907 MMBT2907 2F
Contextual Info: MMBT2907/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2222/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G S-LMBT2907LT1G S-LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40

Contextual Info: SILICON TRANSISTOR NTM 2907A G EN ER A L P U R P O S E A M P LIFIE R , HIGH S P E E D SW ITCH IN G P N P SILICON E P IT A X IA L T R A N S IS T O R MINI M O LD DESCRIPTIO N T he N T M 2 9 0 7 A is P N P Transistor, designed for general purpose am plifier and high speed sw itching applications for H yb rid 1C.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 TRANSISTOR NPN+PNP SOT-363 FEATURE Epitaxial planar die construction One 2222A NPN One 2907A PNP z Ideal for power amplification and switching MARKING: K27

k27 transistor

Abstract: NPN2222A MARKING K27 k27 sot-363 MMDT2227 PNP2907A LC 300-S
Contextual Info: MMDT2227 TRANSYS ELECTRONICS COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features_ Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP Ideal for Low Power Amplification and

Contextual Info: NEW PRODUCT MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP

MARKING K27

Abstract: NPN2222A k27 transistor k27 sot-363
Contextual Info: NEW PRODUCT MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP

K27 pnp

Abstract: K27 npn K27 SOT-363 MARKING k27 sot-363
Contextual Info: SPICE MODELS: MMDT2227 MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • A Complementary Pairs One 2222A Type NPN One 2907A Type (PNP) Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching

2907 TRANSISTOR PNP

Abstract: 1N916 LMBT2907 LMBT2907ALT1 LMBT2907ALT1G LMBT2907LT1 LMBT2907LT1G Lo8.3 LO81
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1 LMBT2907ALT1 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V

transistor 2222a

Abstract: 2222A 2907a npn 2907A 2907a TRANSISTOR PNP DMB2227A maximum current rating of 2907A pnp transistor pnp 2222a
Contextual Info: DMB2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • NEW PRODUCT • • • Complementary Pair Epitaxial Planar Die Construction One 2222A Type NPN , One 2907A Type (PNP) Ideal for Low Power Amplification and Switching

P2T2907

Abstract: P2907 PM2907A PM2907 PZT2222AT1 PZT2907AT1 PZT2907AT3 11111111M 30i sot223 P2907A
Contextual Info: MOTOROU Order this document by P~2907ATllD SEMICONDUCTOR TECHNICAL DATA PNP Silicon EpitmiaI Wansistor P2T2907ATI This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

Contextual Info: DMB2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • N EW PRODU CT • • • Complementary Pair Epitaxial Planar Die Construction One 2222A Type NPN , One 2907A Type (PNP) Ideal for Low Power Amplification and Switching

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907YLT1 MMBT2907AYLT1 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value 2907Y 2907AY Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR LMBT2907LT1 LMBT2907ALT1 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage