marking 8A sot223
Abstract: TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA
Text: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
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ZXTP19020DG
OT223
-47mV
ZXTN19020DG
OT223
ZXTP19020Dex
D-81541
marking 8A sot223
TS16949
ZXTN19020DG
ZXTP19020DG
ZXTP19020DGTA
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ZXTN19020DZ
Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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ZXTP19020DZ
-47mV
ZXTN19020DZ
D-81541
ZXTN19020DZ
ZXTP19020DZ
ZXTP19020DZTA
TS16949
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Untitled
Abstract: No abstract text available
Text: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
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ZXTP19020DG
OT223
-47mV
ZXTN19020DG
OT223
D-81541
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X5T849
Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
Text: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T849G
OT223
OT223
X5T849
ZX5T849G
ZX5T849GTA
ZX5T849GTC
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ZXTN2007G
Abstract: ZXTN2007GTA ZXTN2007GTC zxtn
Text: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007G
OT223
OT223
ZXTN2007G
ZXTN2007GTA
ZXTN2007GTC
zxtn
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ZXTN
Abstract: sot223 device Marking ZXTN2007G ZXTN2007GTA ZXTN2007GTC
Text: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007G
OT223
OT223
ZXTN
sot223 device Marking
ZXTN2007G
ZXTN2007GTA
ZXTN2007GTC
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diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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3SK238
Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003E
3SK238
g1 smd transistor
small signal audio FET
BB303
smd transistor g1
SMD Transistor 070 R
hitachi all fet audio application
hitachi DISCRETE DUAL fet
dual transistor 6 pin SMD 327
Hitachi 2SJ
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HITACHI SMD TRANSISTORS
Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,
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ADE-A08-003E
HITACHI SMD TRANSISTORS
small signal audio FET
hitachi small signal
Tv tuner Diagram LG RF
nf transistor array
g1 smd TRANSISTOR
BB304
3SK238
BB405 equivalent
smd 015
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SOT89 transistor marking 4A
Abstract: SOT89 transistor marking 4A high frequency ZXTN19055DZTA ZXTN19055DZ s75 transistor
Text: ZXTN19055DZ 55V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 55V IC cont = 6A VCE(sat) < 60mV @ 1A RCE(sat) = 28m⍀ PD = 2.1W Description C Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZXTN19055DZ
SOT89 transistor marking 4A
SOT89 transistor marking 4A high frequency
ZXTN19055DZTA
ZXTN19055DZ
s75 transistor
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SMD marking code 55B
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;
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PSMN005-55B;
PSMN005-55P
PSMN005-55P
SMD marking code 55B
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*C945P
Abstract: Philips TO-92 MARKING CODE W 2PA733P 2PC945P TRANSISTOR D 471 9340 350 20126 ST 9340 2PC945
Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING
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M3D186
2PC945
2PA733.
2PC945
MAM259
01-May-99)
*C945P
Philips TO-92 MARKING CODE W
2PA733P
2PC945P
TRANSISTOR D 471
9340 350 20126
ST 9340
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transistor smd code marking tm
Abstract: SMD transistor MARKING CODE 213 PSMN130-200D PSMN130
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology
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PSMN130-200D
PSMN130-200D
OT428
PINNING0200D
OT428
transistor smd code marking tm
SMD transistor MARKING CODE 213
PSMN130
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PSMN035-150P
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA
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PSMN035-150B;
PSMN035-150P
PSMN035-150P
O220AB)
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PSMN015-100P,127
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA
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PSMN015-100B;
PSMN015-100P
PSMN015-100P
O220AB)
PSMN015-100P,127
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SMD Marking 4570
Abstract: PSMN070-200P PSMN070-200B
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA
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PSMN070-200B;
PSMN070-200P
PSMN070-200P
O220AB)
SMD Marking 4570
PSMN070-200B
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CMPT918
Abstract: No abstract text available
Text: Central Central TMTM CMPT918 SemiconductorCorp. Corp. Semiconductor NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CMPT918
CMPT918
OT-23
100MHz
500MHz
200MHz
60MHz
28-Mar
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NTE318
Abstract: No abstract text available
Text: NTE318 Silicon NPN Transistor RF Power Output Description: The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.
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NTE318
NTE318
250mA
100mA
28MHz/12
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NTE318
Abstract: NPN planar RF transistor RF POWER TRANSISTOR NPN
Text: NTE318 Silicon NPN Transistor RF Power Output Description: The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.
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NTE318
NTE318
250mA
100mA
28MHz/12
NPN planar RF transistor
RF POWER TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: 2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2480
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IC 630
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
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2SD2480
Abstract: D2480
Text: 2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2480
2SD2480
D2480
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2SD2480
Abstract: D2480
Text: 2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2480
2SD2480
D2480
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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OCR Scan
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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