TRANSISTOR 2504 Search Results

TRANSISTOR 2504 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 2504 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
2SD596 Abstract: transistor dv4 2SB624 Contextual Info: 2SD596 SILICON TRANSISTOR SOT-23 3 AUDIO FREQUENCY POWER AMPLIFIER 1 NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA	Original	2SD596 OT-23 2SB624 100mA) 200mA 2SD596 transistor dv4	PDF
2SD596 dv3 Abstract: marking DV4 2SB624 2SD596 2sd59 transistor dv4 Contextual Info: 2SD596 SILICON TRANSISTOR SOT-23 3 1 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA	Original	2SD596 OT-23 2SB624 100mA) 200mA 2SD596 dv3 marking DV4 2SD596 2sd59 transistor dv4	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR NPN TO-92S FEATURES z High voltage VCEO:50V z Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) z Complementary to 2SA1175 PNP transistor	Original	O-92S 2SC2785 O-92S 2SA1175 100mA,	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
Contextual Info: RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)	Original	RN2501 RN2506 RN2502 RN2503 RN2504 RN2505 RN1501 RN1506	PDF
transistor DV3 Abstract: transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 2SB624 transistor DV1 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SD596 Pb Micro package. z Lead-free Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP. VCE=1.0V,IC=100mA APPLICATIONS z Audio frequency general purpose amplifier applications.	Original	2SD596 2SB624 200TYP. 100mA) OT-23 BL/SSSTC024 transistor DV3 transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 transistor DV1	PDF
Contextual Info: RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads)	Original	RN2501 RN2506 RN2501, RN2502, RN2503 RN2504, RN2505, RN1501 RN1506	PDF
2sC2785 Abstract: 2SA1175 TRANSISTOR 2SA1175 2SC2785 transistor Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR NPN TO-92S FEATURES z High voltage z Excellent hFE Linearity z Complementary to 2SA1175 PNP transistor 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	O-92S 2SC2785 O-92S 2SA1175 100mA, 2sC2785 TRANSISTOR 2SA1175 2SC2785 transistor	PDF
2506 Abstract: RN1501 RN1506 RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 Contextual Info: RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in SMV (super mini type with 5 leads)	Original	RN2501 RN2506 RN2502 RN2503 RN2504 RN2505 RN1501 RN1506 2506 RN1506 RN2503 RN2506	PDF
2SB624 Abstract: 2SD596 Contextual Info: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.	Original	2SB624 OT-23 The2SB624 -100mA) 2SD596 2SB624	PDF
sot-23 bv2 Abstract: 2SB624 2SD596 Contextual Info: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.	Original	2SB624 OT-23 The2SB624 -100mA) 2SD596 sot-23 bv2 2SB624	PDF
2SC2785 Abstract: transistor 2sc2785 2SC2785 transistor TO92S transistor 2sa1175 KF 25 transistor transistor 123 Contextual Info: 2SC2785 TO-92S Transistor NPN 1. EMITTER TO-92S 2. COLLECTOR 123 Features 3. BASE High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	O-92S 2SC2785 O-92S 2SA1175 100mA, 2SC2785 transistor 2sc2785 2SC2785 transistor TO92S transistor 2sa1175 KF 25 transistor transistor 123	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF

1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545	PDF
G8050S Abstract: G8550S Contextual Info: CORPORATION G8050S ISSUED DATE :2004/04/22 REVISED DATE :2004/11/29B N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio	Original	G8050S 2004/11/29B G8050S 700mA G8550S G8550S	PDF
G8051S Abstract: G8551S Contextual Info: ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8051S N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8051S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio	Original	2004/11/29B G8051S G8051S 700mA G8551S G8551S	PDF
transistor et 454 Abstract: B686 2SD774 pt 4115 T1IU 2SB734 K0559 Contextual Info: Silicon Transistor 2SD774 N PN i + 9 IJ =1 V h NPN Silicon Epitaxial Transistor Audio Frequency Power Am plifier * M S /P A C K A G E DIMENSIONS Unit •mm 0 2SB734 t ^ > 7"U > > ? ') T l i f f l t i i t . < . S B tE T 'to P t = 1.0 W, V ceo = 50 V * & * * * * £ * & /A B S O L U T E M A XIM U M RATINGS {Ta = 25 X )	OCR Scan	2SD774 2SB734 transistor et 454 B686 2SD774 pt 4115 T1IU K0559	PDF
2SB624 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.	Original	2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624	PDF
sot-23 bv4 Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.	Original	2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4	PDF
2SD596 Contextual Info: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range	Original	2SD596 OT-23 OT-23 MIL-STD-202E 2SD596	PDF
RN1501 Abstract: RN1506 RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 Usage 2506 Contextual Info: RN2501~RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)	Original	RN2501 RN2506 RN2502 RN2503 RN2504 RN2505 RN1501 RN1506 RN1506 RN2503 RN2506 Usage 2506	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF

TRANSISTOR 2504 Search Results

TRANSISTOR 2504 Result Highlights (5)

TRANSISTOR 2504 Datasheets Context Search

2sb504

2SD596

2SD596 dv3

sx3704

transistor DV3

2sC2785

2506

2SB624

sot-23 bv2

2SC2785

LG color tv Circuit Diagram schematics

1N6227

2SC 8550

G8050S

G8051S

transistor et 454

2SB624

sot-23 bv4

2SD596

RN1501

Transistor 2SA 2SB 2SC 2SD