TRANSISTOR 2490 Search Results

TRANSISTOR 2490 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 2490 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.	Original	BLC8G27LS-100AV	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
R07DS0753EJ0100 Contextual Info: PreliminaryData Sheet PA2821T1L R07DS0753EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.	Original	PA2821T1L R07DS0753EJ0100 PA2821T1L PA2821T1L-E1-AT PA2821T1L-E2-AT	PDF
BLW96 Contextual Info: ].£.I±£.L ^zml-t-onauckoi iJ^iodueti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLW96 OT121B BLW96	PDF
MM706 Abstract: 40ZA Contextual Info: MOTOROLA SC XSTRS/R 4bE F D b3b?2S4 OOTMflSfl MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2 .5 W - 4 7 0 M H Z - 7 .5 V HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR N PN S IL IC O N . . . designed for 5.0 to 10 Volt U H F large-signal amplifier applications	OCR Scan	T-33-05 MM706 40ZA	PDF
HMXR-5001 Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001 Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog	Original		PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
Motorola transistors MRF646 Abstract: Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF754 MRF846 MRF839 MRF515 MRF644 Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors Higher power output devices in this UHF power transistor series feature internally input-matched construction, are designed	OCR Scan	MRF750 05A-0Ã MRF752 MRF754 MRF627 MRF559 MRF581 MRF515 Motorola transistors MRF646 Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF846 MRF839 MRF644	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
MARKING GT SOT323 Abstract: z149 99 0437 12 05 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand-held phones.	OCR Scan	SC-70/SOT-323) MRF577T1 SC-7Q/SOT-323) Current068 IS22I MRF577T1 MARKING GT SOT323 z149 99 0437 12 05	PDF
CRCW08050R0FKEA Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222 Contextual Info: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P	Original	AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222	PDF

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output and driver am plifier stages in the 100 to 500 MHz frequency range. Specified 28 Voll, 4 00 MHz C haracteristics —	OCR Scan	MRF329	PDF
BLV59 Contextual Info: , Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear power transistor BLV59 PINNING-SOT171A FEATURES « Internal input matching to achieve an optimum wideband capability and high power gain	Original	BLV59 PINNING-SOT171A OT171A BLV59	PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
Contextual Info: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications	Original	BSC024N025S 24N025S	PDF
Contextual Info: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications	Original	BSC024N025S 24N025S	PDF
BSC024N025S Abstract: JESD22 Contextual Info: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications	Original	BSC024N025S 24N025S JESD22	PDF
BSC024N025S Abstract: JESD22 PG-TDSON-8 Contextual Info: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications	Original	BSC024N025S 24N025S 100gerous JESD22 PG-TDSON-8	PDF
24N025S Abstract: BSC024N025S IEC61249-2-21 JESD22 Contextual Info: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications	Original	BSC024N025S IEC61249-2-21 24N025S 24N025S IEC61249-2-21 JESD22	PDF
Contextual Info: BSC024N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 25 V R DS on ,max 2.4 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications	Original	BSC024N025S 24N025S	PDF
2n0404 Abstract: ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 SPP80N04S2-04 DSA003760 Contextual Info: SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature P- TO262 -3-1 • Avalanche rated VDS 40 V RDS on max. SMD version 3.4 mΩ ID 80 A P- TO263 -3-2	Original	SPI80N04S2-04 SPP80N04S2-04 SPB80N04S2-04 SPP80N04S2-04 Q67040-S4260 2N0404 Q67040-S4257 2n0404 ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 DSA003760	PDF

TRANSISTOR 2490 Search Results

TRANSISTOR 2490 Result Highlights (5)

TRANSISTOR 2490 Datasheets Context Search

2N2222A 338

R07DS0753EJ0100

BLW96

MM706

HMXR-5001

RJJ0319DSP

Transistor 2SA 2SB 2SC 2SD

ksd 302 250v, 10a

A5 GNE mosfet

Motorola transistors MRF646

Motorola transistors MRF 947

MARKING GT SOT323

CRCW08050R0FKEA

BLV59

MHW721A2

BSC024N025S

BSC024N025S

24N025S

2n0404