TRANSISTOR 22E Search Results

TRANSISTOR 22E Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 22E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design	Original	RN1310 RN1311 RN2310 RN2311	PDF
Untitled Abstract: No abstract text available Text: RN2314~RN2318 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2314, RN2315, RN2316, RN2317, RN2318 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors	Original	RN2314 RN2318 RN2314, RN2315, RN2316, RN2317, RN1314 RN1318 RN2314	PDF
Untitled Abstract: No abstract text available Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1310, RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design	Original	RN1310 RN1311 RN1310, RN2310 RN2311 SC-70	PDF
Untitled Abstract: No abstract text available Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2312, RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design	Original	RN2312 RN2313 RN2312, RN1312, RN1313	PDF
Untitled Abstract: No abstract text available Text: RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors	Original	RN2301 RN2306 RN2301, RN2302, RN2303 RN2304, RN2305, RN1301 RN1306	PDF
Untitled Abstract: No abstract text available Text: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2310, RN2311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design	Original	RN2310 RN2311 RN2310, RN1310, RN1311	PDF
Untitled Abstract: No abstract text available Text: RN2307~RN2309 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2307, RN2308, RN2309 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design	Original	RN2307 RN2309 RN2307, RN2308, RN1307 RN1309 RN2307 RN2308	PDF
RN2311 Abstract: RN1310 RN1311 RN2310 Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design	Original	RN1310 RN1311 RN2310 RN2311 SC-70lled RN2311 RN1311	PDF
transistor marking 6c1 Abstract: No abstract text available Text: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN	Original	BC846PN/UPN BC847PN BC846PN BC846UPN EHA07177 OT363 transistor marking 6c1	PDF
10160-001 Abstract: std motor G3202 00002EE0 g3425 Text: HIGH PERFORMANCE TRANSISTOR INVERTER TRUE TORQUE CONTROL DRIVE SERIES PROFIBUS-DP COMMUNICATIONS INTERFACE December, 1998 ICC #10160-001 Introduction Thank you for purchasing the “Profibus-DP Communications Interface” for the Toshiba TOSVERT-130 G3 High-Performance Transistor Inverter. Before using the	Original	OSVERT-130 10160-001 std motor G3202 00002EE0 g3425	PDF
Untitled Abstract: No abstract text available Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1	Original	SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 OT363 20may	PDF
transistor marking 6c1 Abstract: No abstract text available Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see	Original	BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor marking 6c1	PDF
HALL EFFECT 21E Abstract: thyristor aeg aeg thyristor transistor Common Base configuration general electric C22B equivalent transistor bc 172 b aeg 2101 thyristor bipolar power transistor data BC 148 TRANSISTOR sot-23 npn marking code cr Text: Bipolar Power Transistor Data Book 1996 Semiconductors TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide, Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original		PDF
transistor NEC D 822 P Abstract: transistor NEC B 617 Text: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS in millimeters inches	OCR Scan	2SC3355 2SC3355 transistor NEC D 822 P transistor NEC B 617	PDF

transistor tic 106 Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245 Text: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.	OCR Scan	BCY66 BCY66 60203-Y transistor tic 106 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245	PDF
AN 7591 POWER AMPLIFIER Abstract: an 7591 nec d 1564 Text: DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2 S C 3 5 8 3 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from V H F band to U H F band.	OCR Scan	2SC3583 MAX000 AN 7591 POWER AMPLIFIER an 7591 nec d 1564	PDF
BCY67 Abstract: HTI 2E 101S Q62702-C254 Text: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in	OCR Scan	BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254	PDF
Untitled Abstract: No abstract text available Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for	OCR Scan	023SbQS Q004312 60203-Y66 BCY66 QQ0M31Ö	PDF
BFX89 Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684 Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general	OCR Scan	23ShQS Q62702-F296 2JS41W BFX89 Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684	PDF
transistor buv 90 Abstract: BCY 85 Q60203-Y66 BCY 66 Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).	OCR Scan	Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66	PDF
QE R 643 Abstract: No abstract text available Text: M an A M P com pany Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MA4T243 Series V3.00 Case Styles Features • • • • • Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip	OCR Scan	MA4T243 MA4T24300 MA4T24300 MA4T24335 QE R 643	PDF
Untitled Abstract: No abstract text available Text: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages	OCR Scan	MA4T243 MA4T24300	PDF
BFR15 Abstract: Q62702-F322 CP12e transistor G25 transistor 2e CER20 TRANSISTOR CP12e 042PF Text: BFR15 NPN Transistor for low-noise broadband and antenna amplifiers BFR15 is an epitaxial NPN silicon planar RF transistor in the case 1 8 A 4 DIN 41876 TO-72 for universal application up into the GHz range, e.g. for low-noise broadband and antenna amplifiers.	OCR Scan	BFR15 BFR15 Q62702-F322 rcaseg70 ip22e cp12e= 103MHz Q62702-F322 CP12e transistor G25 transistor 2e CER20 TRANSISTOR CP12e 042PF	PDF
CA3097 equivalent Abstract: CA3097E SCR 30v triggering circuit RCA-CA3097E volvo scr CA3097 PNP monolithic Transistor Arrays TA6281 0014L diode ZENER 927 Text: G E SOLID STATE Ql D E \| 3075001 00141,55 7 Arrays CA3097 'Y 'q 3 Thyristor/Transistor Array '25 For Military, Comm ercial, and Industrial Applications Features: • Com plete isolation between elements m n-p-n transistor - Vceo = 3 0 V m in . /c = 100 mA (max.)	OCR Scan	CA3097 RCA-CA3097E* 92CS-21934 92CS-22176 CA3097 equivalent CA3097E SCR 30v triggering circuit RCA-CA3097E volvo scr CA3097 PNP monolithic Transistor Arrays TA6281 0014L diode ZENER 927	PDF

TRANSISTOR 22E Search Results

TRANSISTOR 22E Result Highlights (5)

TRANSISTOR 22E Datasheets Context Search

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RN2311

transistor marking 6c1

10160-001

Untitled

transistor marking 6c1

HALL EFFECT 21E

transistor NEC D 822 P

transistor tic 106

AN 7591 POWER AMPLIFIER

BCY67

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BFX89

transistor buv 90

QE R 643

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BFR15

CA3097 equivalent