2SB1050
Abstract: No abstract text available
Text: Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as
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2SB1050
2SB1050
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BLV32F
Abstract: No abstract text available
Text: BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: PACKAGE STYLE .500 6L FLG • Diffused emitter ballasting resistors • PG = 16 dB at 10 W/224 MHz
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BLV32F
BLV32F
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BLV32F
Abstract: BLV32
Text: BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: PACKAGE STYLE .500 6L FLG • Diffused emitter ballasting resistors • PG = 16 dB at 10 W/224 MHz
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BLV32F
BLV32F
BLV32
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NTE2593
Abstract: No abstract text available
Text: NTE2593 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage: V BR CEO = 2100V Min D Low Output Capacitance D Wide ASO Range D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V
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NTE2593
NTE2593
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NTE2592
Abstract: No abstract text available
Text: NTE2592 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V BR CBO = 2000V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
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NTE2592
NTE2592
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NTE2588
Abstract: No abstract text available
Text: NTE2588 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V BR CEO = 1200V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
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NTE2588
NTE2588
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NTE2540
Abstract: 600V NPN 2A
Text: NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min VCE = 2V, IC = 2A D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2540
NTE2540
600V NPN 2A
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pin voltage of ic 393
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD444001 TECHNICAL DATA DATA SHEET 224, REV – Formerly part number SHD4461 SMALL SIGNAL TRANSISTOR DESCRIPTION: SINGLE NPN SMALL SIGNAL TRANSISTOR IN A PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .
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SHD4461
SHD444001
pin voltage of ic 393
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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NTE2583
Abstract: NTE258
Text: NTE2583 Silicon NPN Transistor High Speed Switching Regulator Features: D High Breakdown Voltage and High Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
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NTE2583
NTE2583
NTE258
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2N4265
Abstract: 2904S
Text: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Unit Collector-Emltter Voltage Characteristic VCEO 15 12 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage 30 v EBO 6.0 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 25°C
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2N4264
2N4265
2N4265
O-226AA)
010332b
2904S
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TRANSISTOR bc107 current gain
Abstract: bc107a bc109 bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b
Text: Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to the case • General purpose switching and amplification.
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BC177.
BC107;
BC108;
BC109
BC107
BC109
TRANSISTOR bc107 current gain
bc107a
bc109c
BC108B
bc108a
bc108c
BC107B
transistor TO-92 bc108
transistor bc107b
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Untitled
Abstract: No abstract text available
Text: KSC2759 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSCILLATOR FOR UHF TUNER SO T-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature
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KSC2759
93SMH2
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2N4265
Abstract: 2N4264 QS 100 NPN Transistor
Text: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Collector-Emitter Voltage VCEO 15 12 Collector-Base Voltage v CBO Emitter-Base Voltage Characteristic 30 Unit Vdc Ve b o 6.0 Vdc Collector Current — Continuous Ic 200 mAdc Total Device Dissipation a T a = 25°C
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2N4264
2N4265
2N4265
O-226AA)
2N426S
QS 100 NPN Transistor
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bvc62
Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum
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BLV859
OT262B
711002b
OT262B.
711Dfi5b
bvc62
transistor BD 139
Transistor 5332
bvc62 smd
philips 2322 734
UT70-25
smd transistor k2
2222 500 16641
transistor BD B1 SMD
u 9330
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES j QM30E2Y/ E3Y-2H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • lc • V C EX Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75
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QM30E2Y/
QM30E2Y/E3Y-2H
E80276
E80271
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bu808dfi
Abstract: transistor BU808DFI
Text: r z z s g s t h o m s o n ^D g[R] [iL[iigTr^(Q iD i B U 8 0 8 D FI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON WITH INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . U.L. RECOGNISED ISOWATT218 PACKAGE
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ISOWATT218
E81734
BU808DFI
ISOWATT218
BU808DFI
transistor BU808DFI
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage V e BO 6.0 Vdc Collector Current — Continuous
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lc 5013
Abstract: No abstract text available
Text: KSC5021F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220F • HIGH SPEED SWITCHING : tf = 0.1us Typ • WIDE SOA ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emltter Voltage Rating Unit VcBO 800 V CEO 500
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KSC5021F
O-220F
lc 5013
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BU2520DX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
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BU2520DX
BU2520DX
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Bt 2313
Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts
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GGG71H7
ECG58
ECG59)
TB-35
T44-1
ECG59
ECG58)
ECG60
Bt 2313
Transistor 123AP
transistor t18 FET
transistor BD 263
transistor ECG 152
transistor ecg 226
123ap
Philips ECG 152
ic 2429
ECG24
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2SC1740S
Abstract: 2sc low noise 2SC1740S transistor 2sa933as TRANSISTOR npn
Text: 2SC1740S Transistor, NPN Features Dimensions Units : mm • available in SPT (SC-72) package • low collector saturation voltage, typically VCE(sat) - 0.04 V at lc/lB = 10 mA/1 mA • • low output capacitance, typically Cob = 2.0 pF low noise, typically NF = 1 dB at
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2SC1740S
SC-72)
2SA933AS
2SC1740S
2sc low noise
2SC1740S transistor
TRANSISTOR npn
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MX0912B350Y
Abstract: No abstract text available
Text: Data sheet status Preliminary specification date of Issue June 1992 P H IL IP S MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE ]> INTERNATIONAL • 7110ûSb GD4b354 ÔÛT « P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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MX0912B350Y
GD4b354
FO-91B
MCA926
7110fl2b
MX0912B350Y
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TRANSISTOR BU2520DF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
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BU2520DF
Pq/PO25C
TRANSISTOR BU2520DF
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