TRANSISTOR 2227 Search Results

TRANSISTOR 2227 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 2227 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications FEATURES * Very high input impedance	Original	UG25N45 UG25N45 UG25N45L UG25N45G UG25N45-TA3-T UG25N45L-TA3-T UG25N45G-TA3-T O-220 QW-R203-037	PDF
marking Y1 transistor Abstract: fairchild pin 1 marking Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring	Original	FMB2227A 300mA. marking Y1 transistor fairchild pin 1 marking	PDF
marking Y1 transistor Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring	Original	FMB2227A 300mA. 150mA, 300mA, 150mA 300mA 100kHz 100MHz lwpPr19 marking Y1 transistor transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A	PDF
SC 2272 Abstract: transistor D 2581 724 motorola NPN Transistor motorola transistor r 724 LT4772 t313 Motorola Transistor D 799 motorola ECM 632 transistor motorola transistor 764 Text: MOTORCLA SC XSTRS/R F 1EE D \| b3t,72SH Gafl72S3 T \| MOTOROLA • SEMICONDUCTOR TECHNICAL DATA LT4772 The RF Line N P N Silicon High Frequency Transistor 2 Iß = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed primarily for use in low noise, small-signal amplifiers in satellite down con	OCR Scan	GQfl72S3 SC 2272 transistor D 2581 724 motorola NPN Transistor motorola transistor r 724 LT4772 t313 Motorola Transistor D 799 motorola ECM 632 transistor motorola transistor 764	PDF
TRANSISTOR 2226 Abstract: 2226 transistor UNR2227 Text: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 0.4±0.2 2.90+0.20 –0.05 (R2)   6.8 kΩ 1.1+0.2	Original	UNR2225/2226/2227 UN2225/2226/2227) UNR2225 UNR2226 UNR2227 SJH00040AED TRANSISTOR 2226 2226 transistor	PDF
2226 transistor Abstract: ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227 Text: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 2.90+0.20 –0.05 (R2)   6.8 kΩ	Original	UNR2225/2226/2227 UN2225/2226/2227) UNR2225 UNR2226 UNR2227 2226 transistor ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227	PDF
HMXR-5001 Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001 Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog	Original		PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
RN1221 Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 2226 transistor Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = −800mA) With built-in bias resistors	Original	RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN1221 RN1227 RN2223 RN2227 2226 transistor	PDF
RN1227 Abstract: RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN2221 Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = 800mA)	Original	RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN1227 RN2221	PDF
RN1221 Abstract: RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN2221 1227 rm-1225 Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = 800mA)	Original	RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN1227 RN2221 1227 rm-1225	PDF
RN1221 Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors	Original	RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN1221 RN1227 RN2223 RN2227	PDF
Untitled Abstract: No abstract text available Text: SECTION 2 SPECIFICATIONS INTRODUCTION The Digital Signal Processor DSP is fabricated using high-density Complementary Metal Oxide Semiconductor (CMOS) with Transistor-TransistorLogic (TTL) compatible inputs and outputs. This section covers the maximum ratings, thermal characteristics, and electrical characteristics of the DSP96002.	OCR Scan	DSP96002. DSP96002/D, G14fl47b	PDF

RN2227 Abstract: 2226 transistor transistor 2227 RN2222 RN2224 2227 RN1221 RN1227 RN2221 RN2223 Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = −800mA) With built-in bias resistors	Original	RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN2227 2226 transistor transistor 2227 2227 RN1221 RN1227 RN2223	PDF
RN1221 Abstract: RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN2221 Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = 800mA)	Original	RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RN1227 RN2221	PDF
RN1222 Abstract: 1227 Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = 800mA)	Original	RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 1227	PDF
800ma Abstract: RN2221 RN2222 Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = −800mA) l With built-in bias resistors	Original	RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) 800ma	PDF
RN1224 Abstract: No abstract text available Text: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = 800mA)	Original	RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
d2396 Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460 Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .	OCR Scan	2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460	PDF
Helipot Abstract: R10K-L.25 7216-R10K-L MRF171 motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF171 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc	OCR Scan	MRF171 MRF171, MRF171 AN215A Helipot R10K-L.25 7216-R10K-L motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT	PDF
MT1115 Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir	OCR Scan	108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117	PDF

TRANSISTOR 2227 Search Results

TRANSISTOR 2227 Result Highlights (5)

TRANSISTOR 2227 Datasheets Context Search

Untitled

marking Y1 transistor

marking Y1 transistor

SC 2272

TRANSISTOR 2226

2226 transistor

HMXR-5001

Transistor 2SA 2SB 2SC 2SD

ksd 302 250v, 10a

RN1221

RN1227

RN1221

RN1221

Untitled

RN2227

RN1221

RN1222

800ma

RN1224

A5 GNE mosfet

Motorola transistors MRF 947

d2396

Helipot

MT1115