TRANSISTOR 2120 Search Results

Carlo Gavazzi G2120

Abstract: dupline carlo gavazzi module 2120 transistor 2120 Carlo Gavazzi CHANNEL GENERATOR dupline 128 G21205502 i3 2120
Contextual Info: Input-Module for Elevators Type G 2120 5501 700, G 2120 5502 700 Du line Fieldbus Installationbus • 8-channel transmitter • 8 contact or NPN transistor inputs G2120 5501 or 8 voltage or PNP transistor inputs (G2120 5502) • Open printed circuit board

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor 625

Abstract: transistor case To 105 TO-18 TRANSISTOR 12G-V 343 transistor
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MPSA06 Features l NPN Small Signal Transistor 625 mW NPN Silicon Epitaxial planar Transistor for switching and amplifier applications l As complementary type, the PNP transistor is MPSA56

MRA936

Abstract: BLF276 sot119d sot119d3 TRANSISTOR 0835
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor Product specification December 1997 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF276 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability

itt 3906

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
Contextual Info: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.

T6661

Abstract: MMFT6661T1 MMFT6661 MARKING WAW B8 SOT223 T6661 SOT-223
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMH6661T1/D DATA — — Medium Power Field Effect Transistor MMFT6661TI MotorolaPreferred Devise N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

Contextual Info: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

c5750x7s2a106m

Abstract: AD255A mosfet mttf aft20p06
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

Contextual Info: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Contextual Info: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

pm2222a

Abstract: pm2222 pzt222a PZT2222AT1 PZT2222AT3 PZT2907AT1 QS 100 NPN Transistor MARK WAW
Contextual Info: MOTOROU Order this document by P~2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Siiicon Planar Epitmia[ Transistor PzT222aTl Motorola PrsferredDevlcs This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

1NBA

Abstract: resistor PT-200
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FA1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E o—V W 2.8 + 0.2 1.5 R i = 1 0 k i2 Rl 0.65i8;is •

package 20223

Contextual Info: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is

Johanson Piston Trimmer

Abstract: G200
Contextual Info: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a

PTB 20245

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
Contextual Info: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is

c38 transistor

Abstract: 2160 transistor Johanson Piston Trimmer
Contextual Info: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a

L450A

Abstract: NPN transistor 5 watts Ericsson RF POWER TRANSISTOR
Contextual Info: ERICSSON ^ PTE 20231 * 18 Watts, 2.1-2.2 GHz Cellular Radio RF Power Transistor Description The 20231 isaclassA/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Bated at 18 watts minimum output power in class AB and 8 watts minimum output power

Johanson Piston Trimmer

Abstract: Transistor 025l
Contextual Info: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP power output, it is specifically intended for operation as a final stage

RF NPN POWER TRANSISTOR C 10-12 GHZ

Contextual Info: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minim um output power for PEP applications, it is