TRANSISTOR 2108A Search Results

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

TRANSISTOR 2108A

Abstract: 2108A
Contextual Info: Raytheon Electronics Semiconductor Division L M 1 08A /L H 2108A Precision O perational A m plifiers Features Low input bias current — 2 nA Low input offset current — 200 pA Low input offset voltage — 500|iV Low input offset drift — 5 |iV/°C Wide supply range — ±3V to ±20V

LB 124D transistor

Abstract: TAA970 78L12 cj ne553 TBA915 78M06CG signetics Analogue IC 1977 75S208 MLM311P1 78M08CG
Contextual Info: pages index 2- 3 com petitors cross-reference 4- 9 selection guide 10-13 abridged data 14-24 d iffe re n tia l am plifiers abridged data 25 com parators selection guide 26-27 abridged data 28-31 selection guide 32-35 abridged data 36-39 general industrial

AM97C11CN

Abstract: AM9711CN LM378 equivalent SVI 3102 b LM1850 National Semiconductor LM2706 320l 78l05 lm1900 SVI 3105 B mc1458cp1 sgs
Contextual Info: Edge Index by Function 2 l e i . Voltage Regulators Voltage References Operational Amplifiers/Buffers Instrumentation Amplifiers Voltage Comparators Analog Switches Sample and Hold A to D, D to A 8 Industrial/Automotive/Functional Blocks 9 Audio, Radio and TV Circuits

2-108A4A

Contextual Info: MG100Q1JS40 U nit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • • • • High Input Impedance High Speed : tf= 0 .5 //s Max. trr = 0.5/iS (Max.) Low Saturation Voltage : VCE (sat) = 4 0V (Max.) Enhancement-M ode The Electrodes are Isolated from Case.

LM1808

Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.

MG100Q2YS40

Contextual Info: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

dc to dc chopper using igbt

Abstract: TOSHIBA IGBT DATA BOOK MG100Q1ZS40
Contextual Info: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

TRANSISTOR 2108A

Abstract: 2108a equivalent of 2108A transistor 2108a transistor TR 2108A 2SA1724 EN4698 marking 215 FP215 ic 2108a
Contextual Info: Ordering number:EN4698 FP215 PNP Epitaxial Planar Silicon Composite Transistors High-Frequency Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly.

Toshiba transistor Ic 100A

Abstract: MG100Q1JS40 2-108A4A
Contextual Info: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

MG75Q2YS42

Contextual Info: MG75Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS42 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE(sat) = 4.0V (Max) Enhancement-mode

MG75Q2YS42

Contextual Info: MG75Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS42 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE(sat) = 4.0V (Max)

MG100Q2YS40

Contextual Info: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max)

MG100Q1JS40

Contextual Info: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode

MG100Q1ZS40

Contextual Info: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode

Contextual Info: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode

TRANSISTOR 2108A

Abstract: 2108a 2108a transistor MG75Q2YS1 transistor lf TR 2108A I812
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG75Q2YS1 HIGH POWER SWITCHING APPLICATIONS. Unit in nun MOTOR CONTROL APPLICATIONS. 4 - F A S T - O N - T A B # ! 10 • High Input Impedance • High Speed: tf=0.5ys Max. trr =0 .5fis(Max.) • Low Saturation Voltage: V q E( sat )~i>•0V(Max.

Contextual Info: TOSHIBA MG100Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q1JS40 HIGH POWER SWITCHING APPLICATIONS. Unit in mm CHOPPER APPLICATIONS. 3 -M 5 2 -f*S .6 ± 0 .3 High Input Impedance High Speed : tf= 0.5^ s Max. trr=0.5/,!S (Max.) Low Saturation Voltage

MG100Q1JS40

Contextual Info: T O S H IB A MG100Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 0 0 Q 1 J S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. 3-M 5 • High Input Impedance • High Speed : tf=0.5/*s Max. 2 -Ç Ô 5 . 6 ± 0 . 3 trr= 0.5/^s (Max.)

TRANSISTOR 2108A

Abstract: 2108a 2108a transistor equivalent of 2108A transistor ic 2108a common collector PNP TR 2108A 2108a marking
Contextual Info: Ordering number: EN4698 FP215 No.4698 PNP Epitaxial Planar Silicon Composite Transistors SA\YO High-Frequency Amp, Differential Amp Applications i F eatu re s • Composite type with 2 transistors contained in the PCP package currently in use, improving the

Contextual Info: T O SH IB A MG100Q2YS40 TOSHIBA GTR MODULE M r ; 1 n n SILICON N CHANNEL IGBT n ? Y < ; z L n Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 - ¿’A S T - O N - T A B # 1 1 0 • • High Input Impedance High Speed : tf=0.5/^s Max.

Contextual Info: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

Contextual Info: TOSHIBA MG100Q1JS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG100Q1 JS40 M G 1 0 0 Q 1 JS 4 0 HIGH P O W E R SWITCHING APPLICATIONS U nit in mm CHO PPER APPLICATIONS. 2~JZ<5 6 ± 0 3 • High Input Impedance • High Speed : t f= 0 .5 ^ s (Max.)

Contextual Info: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage