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    TRANSISTOR 20201 Search Results

    TRANSISTOR 20201 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 20201 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    420 NPN Silicon RF Transistor

    Abstract: No abstract text available
    Text: e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    Original     		1-877-GOLDMOS 1301-PTB 420 NPN Silicon RF Transistor PDF

    8801

    Abstract: No abstract text available
    Text: e PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


    Original     		1-877-GOLDMOS 1301-PTB 8801 PDF

    z-Source

    Abstract: No abstract text available
    Text: e PTB 20095 15 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    Original     		1-877-GOLDMOS 1301-PTB z-Source PDF

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20003 4 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for


    Original     		1-877-GOLDMOS 1301-PTB PDF

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20005 15 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    Original     		1-877-GOLDMOS 1301-PTB PDF

    TV power transistor

    Abstract: ERICSSON 20101 ERICSSON+20101
    Text: e PTB 20101 175 Watts P-Sync, 470–860 MHz UHF TV Power Transistor Description The 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation,


    Original     		1-877-GOLDMOS 1301-PTB TV power transistor ERICSSON 20101 ERICSSON+20101 PDF

    20006

    Abstract: No abstract text available
    Text: e PTB 20006 4 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for


    Original     		1-877-GOLDMOS 1301-PTB 20006 PDF

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20008 10 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB PDF

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20105 20 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB PDF

    9434

    Abstract: RF 1501 100 watt transistor
    Text: e PTB 20046 1 Watt, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB 9434 RF 1501 100 watt transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20141 18 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor Description The 20141 is a class AB, NPN, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB PDF

    9434

    Abstract: No abstract text available
    Text: e PTB 20134 30 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB 9434 PDF

    81 210 w 07 transistor

    Abstract: RF 1501 1-877-GOLDMOS
    Text: e PTB 20051 6 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor Description The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB 81 210 w 07 transistor RF 1501 1-877-GOLDMOS PDF

    9434

    Abstract: transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: e PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB 9434 transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular F ilo RF Power Transistor Key Features Description The 20030 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 420470 MHz frequency band. It is rated at 15 Watts minimum


    OCR Scan     		200mA 200mA PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON PTB 20074 14 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Key Features Description The 20074 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 14 Watts minimum


    OCR Scan     		26Vdc, PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    transistor 20201

    Abstract: jarvis
    Text: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    OCR Scan     		PDF

    RF TRANSISTOR 2.5 GHZ s parameter

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor D escription The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor D escription The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    OCR Scan     		PDF

    Gan transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20176 5 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20176 is a class A/AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated 5 Watts minimum output power and may be used for both CW and


    OCR Scan     		PDF

    lc 945 p transistor

    Abstract: transistor LC 945 lc 945 transistor
    Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20095 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 w atts minimum output power, it may be used for


    OCR Scan     		PDF