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    TRANSISTOR 200V 100MA NPN Search Results

    TRANSISTOR 200V 100MA NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 200V 100MA NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ZTX855

    Abstract: VCB-200V DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		ZTX855 100mA, 50MHz 100mA Am100 100ms ZTX855 VCB-200V DSA003778 PDF

    FZT757

    Abstract: 200V 100MA NPN t6757 FZT657
    Text: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757


    Original     		ZDT6753 ZDT6757 T6757 OT223) -10mA, -160V, -200V, -100mA, -10mA* FZT757 200V 100MA NPN t6757 FZT657 PDF

    complementary npn-pnp

    Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
    Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		ZDT6757 -160V, -200V, -100mA, -10mA* complementary npn-pnp complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725 PDF

    200V transistor npn 10a

    Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
    Text: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER


    Original     		2N3583 2N3584 2N3585 500mA 200mA, 100mA, 200V transistor npn 10a transistor 200V 100MA NPN 200v 10a npn transistor 200V 100MA NPN PDF

    NTE124

    Abstract: 325V
    Text: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,


    Original     		NTE124 NTE124 100mA 10MHz 250mA, 100mA, 10MHz, 100kHz 325V PDF

    2N3738

    Abstract: No abstract text available
    Text: 2N3738 2N3739 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3738 and 2N3739 are silicon epitaxial NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER


    Original     		2N3738 2N3739 2N3738 2N3738) 2N3739) 250mA, 100mA PDF

    ZTX415

    Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


    Original     		ZTX415 200mA 620pF 100mA 20MHz 100MHz ZTX415 transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c PDF

    fzt855

    Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -


    Original     		OT223 FZT855 FZT955 100ms fzt855 100 Amp current 1000 volt diode FZT955 DSA003675 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -


    Original     		OT223 FZT855 FZT955 100ms PDF

    2SD1350

    Abstract: 2SD1350A
    Text: Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm • Features Symbol Collector to 2SD1350 base voltage 2SD1350A Collector to 2SD1350 Ratings * 4.5±0.1 0.55±0.1 400 VCBO 600 400 VCEO 500 VEBO


    Original     		2SD1350, 2SD1350A 2SD1350 2SD1350 2SD1350A PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ISSUE 2 – MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


    Original     		ZTX855 po100 100ms PDF

    transistor c 3181

    Abstract: ZTX457 200V 100MA NPN DSA003767
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX457 ISSUE 2 – MARCH 1994 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		ZTX457 100mA, 20MHz transistor c 3181 ZTX457 200V 100MA NPN DSA003767 PDF

    FZT657

    Abstract: FZT757 DSA003712
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT657 TYPICAL CHARACTERISTICS 1.8 - Normalised Gain % 1.2 IC /IB=10 1.0 0.8 V 0.6 0.4 0.2 0.01 0.1 1 10 h - (Volts) 1.4 E 80 40 ABSOLUTE MAXIMUM RATINGS. 20 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps)


    Original     		OT223 FZT657 FZT757 100mA, 20MHz FZT657 FZT757 DSA003712 PDF

    NTE394

    Abstract: No abstract text available
    Text: NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V


    Original     		NTE394 NTE394 100mA, PDF

    transistor Ic 1A datasheet NPN

    Abstract: 200V transistor npn 2a MJ410 200V 100MA NPN
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ410 DESCRIPTION •High Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS ·Designed for medium to high voltage inverters, converters,


    Original     		MJ410 100mA; transistor Ic 1A datasheet NPN 200V transistor npn 2a MJ410 200V 100MA NPN PDF

    NTE157

    Abstract: NTE39
    Text: NTE157 Silicon NPN Transistor Audio Power Amp, High Voltage Converter Compl to NTE39 Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays.


    Original     		NTE157 NTE39) NTE157 100mA 10MHz 10MHz, 100kHz 100mA, NTE39 PDF

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY M EDIU M POWER TRANSISTORS ZDT6757 ISSUE 1 - NOVEMBER 1995 - ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L NPN PNP Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage V CEO 300 -300 V Emitter-Base Voltage


    OCR Scan     		ZDT6757 -100mA, lc--100mA, 100mA, -10mA, 20MHz FZT757 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSU E 2 - MARCH 94_ FE A T U R E S * 150 Volt Vc 'C E O * * * 4 Am ps continuous current Up to 10 Am ps peak current Very low saturation voltage * Ptot= 1.2 Watt


    OCR Scan     		100mA, 50MHz 100mA 300ns. ZTX855 PDF

    200V transistor npn 10a

    Abstract: 2N3583 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN
    Text: HataSheet 2N3583 2N3584 2N3585 CGVIIiu1 acniiwiiiinuwKor %iirpa NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3583 series types are Silicon NPN Transistors designed for high speed


    OCR Scan     		2N3583 2N3584 2N3585 2N3583 125mA 100mA 100mA 200V transistor npn 10a 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR M EDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 — IS S U E 2 - M A R C H 94. FEATURES * * 150 Volt V CE0 4 A m p s continuous current * * Up to 10 A m p s peak current Very low saturation voltage


    OCR Scan     		ZTX855 001G35S PDF

    Untitled

    Abstract: No abstract text available
    Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA


    OCR Scan     		350mA 380MHz 650MHz 600MHz 200mA 300MHz 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps


    OCR Scan     		OT223 FZT855 FZT955 500mA* -100mA, 50MHz 1-100mA 100mA, PDF

    2N4299

    Abstract: 2N4296 vbe 10v, vce 500v NPN Transistor 2N4298 transistor 200V 100MA NPN
    Text: Datasheet 2N4296 2N4298 2N4299 1 WMM Sem iconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE M anufacturers of W orld C lass D iscrete S em iconductors DESCRIPTION


    OCR Scan     		2N4296 2N4298 2N4299 2N4296, 2N4298, 2N4299 100mA 2N4296 vbe 10v, vce 500v NPN Transistor 2N4298 transistor 200V 100MA NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CZT2680 Semiconductor Corp. SURFACE MOUNT NPN HIGH VOLTAGE SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching


    OCR Scan     		CZT2680 OT-223 500mA 100mA, 500mA, 50itiA OT-223 PDF