TRANSISTOR 200V 100MA NPN Search Results

ZTX855

Abstract: VCB-200V DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

FZT757

Abstract: 200V 100MA NPN t6757 FZT657
Contextual Info: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757

complementary npn-pnp

Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER

200V transistor npn 10a

Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
Contextual Info: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER

NTE124

Abstract: 325V
Contextual Info: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,

2N3738

Contextual Info: 2N3738 2N3739 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3738 and 2N3739 are silicon epitaxial NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER

ZTX415

Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation

Contextual Info: SM-8 COMPLEMENTARY M EDIU M POWER TRANSISTORS ZDT6757 ISSUE 1 - NOVEMBER 1995 - ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L NPN PNP Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage V CEO 300 -300 V Emitter-Base Voltage

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSU E 2 - MARCH 94_ FE A T U R E S * 150 Volt Vc 'C E O * * * 4 Am ps continuous current Up to 10 Am ps peak current Very low saturation voltage * Ptot= 1.2 Watt

200V transistor npn 10a

Abstract: 2N3583 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN
Contextual Info: HataSheet 2N3583 2N3584 2N3585 CGVIIiu1 acniiwiiiinuwKor %iirpa NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3583 series types are Silicon NPN Transistors designed for high speed

fzt855

Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -

2SD1350

Abstract: 2SD1350A
Contextual Info: Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm • Features Symbol Collector to 2SD1350 base voltage 2SD1350A Collector to 2SD1350 Ratings * 4.5±0.1 0.55±0.1 400 VCBO 600 400 VCEO 500 VEBO

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ISSUE 2 – MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

FZT657

Abstract: FZT757 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT657 TYPICAL CHARACTERISTICS 1.8 - Normalised Gain % 1.2 IC /IB=10 1.0 0.8 V 0.6 0.4 0.2 0.01 0.1 1 10 h - (Volts) 1.4 E 80 40 ABSOLUTE MAXIMUM RATINGS. 20 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps)

NTE394

Contextual Info: NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

Contextual Info: NPN SILICON PLANAR M EDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 — IS S U E 2 - M A R C H 94. FEATURES * * 150 Volt V CE0 4 A m p s continuous current * * Up to 10 A m p s peak current Very low saturation voltage

Contextual Info: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA

IC 8823

Contextual Info: SILICON NPN TRANSISTOR 2N6235R • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps

2N4299

Abstract: 2N4296 vbe 10v, vce 500v NPN Transistor 2N4298 transistor 200V 100MA NPN
Contextual Info: Datasheet 2N4296 2N4298 2N4299 1 WMM Sem iconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE M anufacturers of W orld C lass D iscrete S em iconductors DESCRIPTION

transistor Ic 1A datasheet NPN

Abstract: 200V transistor npn 2a MJ410 200V 100MA NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ410 DESCRIPTION •High Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS ·Designed for medium to high voltage inverters, converters,

NTE157

Abstract: NTE39
Contextual Info: NTE157 Silicon NPN Transistor Audio Power Amp, High Voltage Converter Compl to NTE39 Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays.

Contextual Info: Central CZT2680 Semiconductor Corp. SURFACE MOUNT NPN HIGH VOLTAGE SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching