transistor MRF321
Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Text: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321/D
MRF321
transistor MRF321
JMC5201
redcap
erie redcap capacitors
vk200 coil
erie redcap
vk200
1N4001
MRF321
case 244-04
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MRF321
Abstract: ferroxcube 56-590-65
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
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MRF321
400MHz
1N4001
56-590-65/4B)
VK200-19/4B
MRF321
ferroxcube 56-590-65
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RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high
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MRF20060/D
MRF20060
MRF20060S
MRF20060
MRF20060S
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ
BD136
BD135
MJD47
RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
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SLD-2083CZ
Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2
Text: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz
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SLD-2083CZ
RF083
SLD-2083CZ
SLD2083CZ
600S120FT250XT
600S6R8BT250XT
0603CS-16NXJB
0603CS-1N6XJB
0603CS-4N7XJB
915 MHz RFID
GaN Bias 25 watt
j20 Schematic
InP transistor HEMT
transistor BJT Driver
smd transistor ne c2
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MRF321
Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321
Text: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321/D
MRF321
MRF321/D*
MRF321
3 w RF POWER TRANSISTOR NPN
erie redcap capacitors
1N4001
VK200
transistor MRF321
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RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030/D
MRF20030
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
MOTOROLA TRANSISTOR 935
BD136
bd136 transistor
10J capacitor
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
transistor NPN 30 watt
BD135
MJD47
MRF20030
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transistor MRF321
Abstract: JMC 1200
Text: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MRF321/D
MRF321
MRF321
MRF321/D*
MRF321/D
transistor MRF321
JMC 1200
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ATC100B
Abstract: MAPLST2122-090CF transistor f1
Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 MAPLST2122-090CF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power
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MAPLST2122-090CF
28VDC,
-45dB
096MHz)
2110MHz)
ATC100B
MAPLST2122-090CF
transistor f1
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Untitled
Abstract: No abstract text available
Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 2/18/2003 MAPLST2122-090WF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power
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MAPLST2122-090WF
28VDC,
-45dB
096MHz)
2110MHz)
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MRF327
Abstract: 80WF
Text: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base
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MRF327
AR120NA
MRF327
80WF
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PH0810-35
Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
Text: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration
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PH081
53dBm
PH0810-35
lN4245
PH0810-35
Transistor c54
F1 J37
transistor 431 N
cl 740
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F1 J37
Abstract: b 595 transistor PH1516-60 PHI516160 wacom PHI516
Text: * z-,-3 y-z =: .-= z =z = an AMP company Wireless Bipolar Power Transistor, 1450 - 1550 MHz 60W PHI516160 Features Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP Class A: +53 dBm Typ 3rd Order Intercept Point
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PHI516160
F1 J37
b 595 transistor
PH1516-60
PHI516160
wacom
PHI516
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COUGAR LOW NOISE AMPLIFIER
Abstract: No abstract text available
Text: High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data CTO-565 Features Description Pin Configuration • 1 Watt Output Power The CTO-565 is a high gain, high efficiency , Class A 1 Watt amplifier designed to provide broadband power for a wide variety of
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CTO-565
COUGAR LOW NOISE AMPLIFIER
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Johanson Piston Trimmer
Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Text: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc
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MRF327/D
MRF327
Johanson Piston Trimmer
J154
J329
J253
vk200
erie redcap capacitors
MRF327
NPN RF Amplifier
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jmc 5201
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MRF321
jmc 5201
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vk200 coil
Abstract: FERROXCUBE VK200 jmc 5201
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts
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MRF321
vk200 coil
FERROXCUBE VK200
jmc 5201
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D73 transistor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321
MRF321
b3b72S5
D73 transistor
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rohm mtbf
Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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1S211
1S22I
MRF20030
rohm mtbf
kermet case b
bd136 equivalent
933 TRANSISTOR
SILICON PNP POWER TRANSISTOR b 861
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1417-2
Abstract: Load VSWR tolerance CAV 444 1417 ic
Text: 1417-2 2 Watt "28 Volts’ Class c CHz TECHNOLOGY »FMicKowAVE silicon powe > T»*N5HTo«i M ic ro w a v e 1 4 0 0 - 1 7 0 0 GENERAL DESCRIPTION M H z CASE OUTLINE The 1417-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is
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RD11110
000QD34
1417-2
Load VSWR tolerance
CAV 444
1417 ic
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DBT134
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030R/D
DBT134
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MRF327
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band
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80-mil-Thick
MRF327
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vk200 coil
Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
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MRF321
vk200 coil
jmc 5201
ferroxcube 56-590-65
VK200-19
FERROXCUBE VK200
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MRF327
Abstract: Johanson Piston Trimmer
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band
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MRF327
80-mil-Thick
MRF327
Johanson Piston Trimmer
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capacitor 50uf
Abstract: balun 50 ohm DU28200M transistor c s z 44 v
Text: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
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DU28200M
13PARTS
500pF
2700OHM
DU28200M
1000pF
capacitor 50uf
balun 50 ohm
transistor c s z 44 v
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